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Improvement of Ga distribution with Sb incorporation for two-step low-temperature processing of CIGSe thin film solar cells
摘要： In this study, the application of Sb incorporation for low-temperature (≤ 450 °C) processing of Cu(In,Ga)Se2 (CIGSe) solar cells is explored. At low reaction temperature, most Ga remains at the back of the ?lm adjacent to the Mo back contact. We observed that the incorporated Sb enhanced grain size and improved device performance compared with similarly processed CIGSe ?lms made without Sb. From the energy-dispersive spectroscopy analysis and secondary ion mass spectrometry results, it was determined that elemental Ga accumulation at the back of the reacted ?lm after the two-step selenization process was signi?cantly alleviated owing to Sb incorporation. Signi?cant Sb-induced grain size enhancement was con?rmed using cross-sectional scanning electron microscopy. The electronic and optical properties of the Sb incorporated CIGSe ?lms were examined with admittance spectroscopy and ?uorescence lifetime imaging techniques.
关键词： Ga distribution,Thin ?lm solar cell,Sb incorporation,Low temperature process
更新于2025-11-14 17:28:48
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SrCl <sub/>2</sub> an environment friendly alternate to CdCl <sub/>2</sub> treatment for CdTe thin films solar cell application
摘要： The CdCl2 treatment is a an important step for CdTe absorber based solar cell, however CdCl2 is less abundant, toxic and extremely environment unfriendly. We propose strontium chloride SrCl2 as a possible environment friendly replacement which is non-toxic, abundant and provide comparable ef?ciency to thin ?lm solar cell. In this work the CdTe thin ?lm was prepared by closed space sublimation (CSS) technique, while SrCl2 was further coated by a spin coater and ?nally annealed at 200 °C. The structural properties including particle size, dislocation density and strain were determined. The structural analysis reveals that the ?lms are crystalline, cubic zinc-blende structure with preferred orientation of (111) plane. Presence of SrCl2 layer causes increase in the intensities for other orientations of (220) and (311), showing material loses in the preferred orientation of (111) making it polycrystalline. Surface morphology observed by SEM shows improved uniformity with fewer defects after SrCl2 treatment. Band gap and other optical properties were determined using spectroscopic ellipsometry. Optical band gap is found in the range 1.6 eV to 1.4 eV and observed to decrease with the increasing SrCl2 content. The electrical conductivity is observed increasing with the addition of second layer. We report that the SrCl2 coated thin ?lms are ef?cient, comparable and environmental friendly replacement for the CdCl2 coated CdTe thin ?lms.
关键词： thin ?lm solar cell,CdTe,CdCl2 coating,SrCl2 coating
更新于2025-09-23 15:19:57
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Application of Al-Doped (Zn, Mg)O on pure-sulfide Cu(In, Ga)S2 solar cells for enhancement of open-circuit voltage
摘要： In this study, interfacial recombination observed by activation energy (Ea) is reduced with an improvement in the built-in potential (Vbi) by raising the conduction band minimum (EC) in Al-doped (Zn, Mg)O (AZMO) layer for pure-sul?de Cu(In, Ga)S2 (CIGS) solar cells. It is observed that the optical band gap in AZMO ?lms can be widened from 3.56 to 3.97 eV with increasing Mg/(Mg + Zn) ratio from 0 to 0.23, suggesting the shift of EC toward the vacuum level. AZMO layers with Mg/(Mg + Zn) ratio of 0–0.23 are applied as transparent conductive oxide (TCO) for the pure-sul?de CIGS solar cells. The open-circuit voltage is clearly enhanced from 0.641 to 0.713 V with increasing Mg/(Mg + Zn) ratio from 0 to 0.09 and then decreased to 0.651 V at Mg/(Mg + Zn) ratio of 0.23 in the AZMO layer. Reverse saturation current density (J0) was minimized to 9.4 × 10?7 A/cm2 at Mg/(Mg + Zn) of 0.09, although J0 was 4.7 × 10?6 A/cm2 in Al-doped ZnO (Mg/(Mg + Zn) of 0). From Mott-Schottky plot, it is observed that Vbi for the pure-sul?de CIGS solar cells gradually enhanced with an increase in Mg/(Mg + Zn) from 0 to 0.23 in the AZMO layer. These results suggest that Vbi improves by controlling EC in the TCO layer, which ultimately reduces the recombination at the hetero interface owing to strengthened electric ?eld.
关键词： Al-doped (Zn, Mg)O,Chalcopyrite,Thin-?lm solar cell,Built-in potential,Conduction band minimum,Cu(In, Ga)S2
更新于2025-09-16 10:30:52
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Coupling and Trapping of Light in Thin-Film Solar Cells Using Modulated Interface Textures
摘要： Increasing the e?ciency of solar cells relies on light management. This becomes increasingly important for thin-?lm technologies, but it is also relevant for poorly absorbing semiconductors like silicon. Exemplarily, the performance of a-Si:H/μc-Si:H tandem solar cells strongly depends on the texture of the front and rear contact surfaces. The rear contact interface texture usually results from the front surface texture and the subsequent absorber growth. A well-textured front contact facilitates light-coupling to the solar cell and light-trapping within the device. A variety of di?erently textured ZnO:Al front contacts were sputter deposited and subsequently texture etched. The optical performance of a-Si:H/μc-Si:H tandem solar cells were evaluated regarding the two e?ects: light-coupling and light-trapping. A connection between the front contact texture and the two optical e?ects is demonstrated, speci?cally, it is shown that both are induced by di?erent texture properties. These ?ndings can be transferred to any solar cell technologies, like copper indium gallium selenide (CIGS) or perovskites, where light management and modi?cations of surface textures by subsequent ?lm growth have to be considered. A modulated surface texture of the ZnO:Al front contact was realized using two etching steps. Improved light-coupling and light-trapping in silicon thin-?lm solar cells lead to 12.5% e?ciency.
关键词： thin-?lm solar cell,light-trapping,ZnO:Al,front contact,light-scattering,surface texture,light-coupling
更新于2025-09-16 10:30:52
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Performance Investigation of Mott-Insulator LaVO3 as a Photovoltaic Absorber Material
摘要： Mott insulators have recently been identi?ed as potential solar energy conversion material due to their favorable parameters. In this paper, we have investigated the cell performance by exploring the photovoltaic properties of Mott Insulator LaVO3 (LVO). The LVO thin ?lms were grown by the sol–gel technique followed by a sintering pathway under various processing conditions. We investigated the in?uence of processing parameters on the structural, optical and electrical properties of the ?lms through different characterization techniques. A correlation between the material parameters with the device performance has been established to ensure LVO perovskite for photovoltaic applications. This analysis will aid researchers to realize Mott insulators as light absorber material.
关键词： photovoltaic material,Mott insulator,Thin ?lm solar cell,oxide perovskites
更新于2025-09-11 14:15:04