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High performance n-type vertical organic phototransistors
摘要： In this manuscript, a solution-processed n-type organic phototransistor based on vertical structure thin-film transistors was proposed. Due to the vertical structure and short channel length (≈130 nm), the transistors exhibited excellent current density (15.4 mA/cm2) with high Ion/Ioff ratio (up to 105). On account of this structure, the face-on π-π stacking of P(NDI2OD-T2) was aligned with the charge transport direction, which facilitated charge transfer from source to drain electrode. Moreover, n-type organic phototransistors based on vertical thin-film transistors were demonstrated for the first time, in which the active layer was protected by the source-drain electrodes, resulting in the improvement of the stability of the device. Due to the nanoscale channel, efficient separation of electron-hole pairs and quick charge transfer can be achieved. Hence, high-performance n-type phototransistor was obtained with responsivity of 34.8 A/W, photosensitivity of 4.78×104, detectivity of 3.95×1013 Jones and external quantum efficiency up to 1.1×104 % under 400 nm illumination with a light intensity of 200 μW cm-2, which was much better than those reported n-type organic phototransistors. This work provided a strategy for the fabrication of high performance n-type organic phototransistor, which paved the way for its future application in the next-generation organic optoelectronics.
关键词： n-type organic semiconductor,Organic phototransistors,Vertical structure,Organic thin-film transistors
更新于2025-09-19 17:15:36
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Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors
摘要： In this study, indium gallium zinc oxide (InGaZnO [IGZO]) active layer capped with an ultrathin p-type stannous oxide (SnO) is demonstrated to be a thin film transistor (TFT) for color scanning and photosensing device applications. Typically, the sole IGZO-based TFT is blind to visible light and hard to be developed for visible light sensing. The combination of IGZO and SnO layers can extend the light detection spectrum into visible light wavelengths and ameliorate the photosensing characteristics. The optical responsivity and signal to noise ratio can even be enhanced from 1.05 × 10?2 to 398.02 A W?1 and from 2.1 × 101 to 6.8 × 105 with at least four orders of magnitude, respectively. With the detailed material analysis and physical model discussed, it suggests that the large amount of additional light-excited carrier generated in the capping layer is the key factor for the significant improvement. Furthermore, the phenomenon of persistent photoconductivity can be effectively suppressed by its natural recombination under the heterojunction structure without applying charge-pumping method. The electrical uniformity of the sensor device is also highly potential for the next-generation displays integrating the photosensing functions.
关键词： detection spectrum,thin film transistors,in-cell photosensors,ultrathin light-absorbing layers,photoresponsivity
更新于2025-09-19 17:15:36
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35.3: Self-formed nano-scale metal-oxide contact interlayer for amorphous silicon tin oxide TFTs
摘要： The formation of metal oxide interlayer is induced by pre-annealing process in the amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ~8nm MoOx interlayer. The introduction of MoOx interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoOx interlayer. The self-formed MoOx interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film.
关键词： self-formed interlayer,amorphous Silicon-Tin-Oxide,work function,Thin film transistors,ohmic contact
更新于2025-09-19 17:15:36
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Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO <sub/>3</sub> -SrSnO <sub/>3</sub> Solid-Solution Based Thin Film Transistors
摘要： The transparent oxide semiconductor (TOS) with large bandgap (Eg ≈ 4 eV) based thin-film transistors (TFTs) showing both high carrier mobility and UV–visible transparency has attracted increasing attention as a promising component for next generation optoelectronics. Among TOSs, BaSnO3–SrSnO3 solid-solutions (Eg = 3.5–4.2 eV) are good candidates because the single crystal shows very high mobility. However, the TFT performance has not been optimized due to the lack of fundamental knowledge especially the effective thickness (teff ) and the carrier effective mass (m*). Here, it is demonstrated that the electric field thermopower (S) modulation method addresses this problem by combining with the standard volume carrier concentration (n3D) dependence of S measurements. By comparing the electric field accumulated sheet carrier concentration (n2D) and n3D at same S, it is clarified that the teff (≈n2D/n3D) of the conducting channel becomes thicker with increasing Sr concentration, whereas the m* becomes lighter. The former would be due to the increase of Eg and latter would be due to the enhancement of overlap population of neighboring Sn 5s orbitals. The present analyses technique is useful to experimentally clarify the teff and m*, and essentially important to realize advanced TOS-based TFTs showing both high optical transparency and high mobility.
关键词： electric field thermopower modulation,effective thickness,thin film transistors,BaSnO3–SrSnO3 solid solution,effective mass
更新于2025-09-19 17:15:36
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P-1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs
摘要： In this paper, we fabricated self-aligned top-gate (SATG) amorphous thin-film transistors (TFTs). The conductive source/drain regions were formed by hydrogen incorporation during the deposition of SiOx or SiNx passivation layer using plasma-enhanced chemical vapor deposition (PECVD). The effect of passivation layer deposition condition on the electrical performance of self-aligned top-gate a-IGZO TFTs was investigated. It was shown that the source-drain parasitic resistance (Rsd) was effectively reduced during the deposition of SiNx passivation layer than SiOx. However, as the deposition temperature of SiNx passivation layer increased, hydrogen lateral diffusion into channel region resulted in the shrinkage of effective channel length and the deterioration of electrical performance of short-channel device.
关键词： thin-film transistors,hydrogen diffusion,self-aligned top-gate,a-IGZO
更新于2025-09-19 17:15:36
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Thin Dielectric Layer Enabled Low Voltage Operation of Fully Printed Flexible Carbon Nanotube Thin Film Transistors
摘要： Quality of printable dielectric layer has become one of the major obstacles to achieve high performance fully printed transistors. A thick dielectric layer will require high gate voltage to switch on and off the transistors, which will cause high power dissipation in printed devices. In response to this challenge, fully printed carbon nanotube (CNT) based thin film transistors (TFTs) have been fabricated on flexible membranes such as polyimide and liquid crystal polymer using aerosol jet printing (AJP). These devices can be operated at bias voltages below ±10 V (drain/gate voltages around ±6 V). It is much smaller than the previously reported values for fully printed CNT-TFTs using xdi-dcs (mixture of poly(vinylphenol)/poly (methylsilsesquioxane)) as dielectric and using a single printing method. This is enabled because of thin dielectric layer (~300 nm) and good uniformity in printed CNT network. The printed CNT-TFTs show on/off ratio > 105, and mobility > 5 cm2V-1s-1. Layer-by-layer deposition of CNT allows highly uniform and dense network formation, and the optimization of the xdi-dcs concentration using natural butyl alcohol provides a high-yield printing of a thin dielectric layer. Collectively, this work shows a potential of using fully printed CNT-TFTs in various flexible electronic applications such as wearable sensors, actuators, artificial skins, displays and wireless tags and antennas.
关键词： xdi-dcs,aerosol jet printing,printed dielectric,flexible electronics,fully printed thin film transistors,carbon nanotube network
更新于2025-09-19 17:13:59
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Laser induced ultrafast combustion synthesis of solution-based AlO <sub/>x</sub> for thin film transistors
摘要： Solution processing of amorphous metal oxides using excimer laser annealing (ELA) has been lately used as a viable option to implement large-area electronics, offering high quality materials at a reduced associated cost and process time. However, the research has been focused on semiconductor and transparent conductive oxide layers rather than on the insulator layer. In this work we present amorphous aluminum oxide (AlOx) thin films produced at low temperature (≤150 °C) via combustion synthesis triggered by ELA, for oxide thin film transistors (TFTs) suitable for manufacturing flexible electronics. The study showed that combining ELA and combustion synthesis leads to an improvement in the dielectric thin film’s densification in a shorter time (≤15 min). Optimized dielectric layers were obtained combining a short drying cycle at 150 °C followed by ELA treatment. High breakdown voltage (4 MV cm?1) and optimal dielectric constant (9) was attained. In general, TFT devices comprising the AlOx fabricated with a drying cycle of 15 min followed by ELA presented great TFT properties, a high saturation mobility (20.4 ± 0.9 cm2 V?1 s?1), a small subthreshold slope (0.10 ± 0.01 V dec?1) and a turn-on voltage ≈0 V. ELA is shown to provide excellent quality solution-based high-k AlOx dielectric, that surpass other methods, like hot plate annealing and deep ultraviolet (DUV) curing. The results achieved are promising and expected to be of high value to the printed electronic industry due to the ultra-fast film densification and the surface/area selective nature of ELA.
关键词： thin film transistors,excimer laser annealing,solution processing,amorphous metal oxides,combustion synthesis,flexible electronics
更新于2025-09-19 17:13:59
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Facile synthesis of a semiconducting bithiophene-azine polymer and its application for organic thin film transistors and organic photovoltaics
摘要： A new azine polymer poly(4,40-didodecyl-2,20-bithiophene-azine) (PDDBTA) was synthesized in only three steps. PDDBTA showed hole mobilities of up to 4.1 (cid:2) 10(cid:3)2 cm2 V(cid:3)1 s(cid:3)1 in organic thin ?lm transistors (OTFTs) as a p-channel material. As a donor in organic photovoltaics (OPVs), power conversion e?ciencies (PCEs) of up to 2.18% were achieved, which is the ?rst example of using an azine-based polymer for OPVs. These preliminary results demonstrate the potential of bithiophene-azine polymers as a new type of low-cost semiconductor material for OPVs and other organic electronics.
关键词： azine polymer,semiconductor material,organic photovoltaics,organic thin film transistors
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Evaluating the Electricity Production and Energy Saving from Transparent Photovoltaics for Windows in Commercial Buildings
摘要： A pentacene (C22H14)-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current–voltage (I–V ) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V < VG < 20 V). The HVOTFT was evaluated with three different gate insulators to assess how the dielectric constant and interface states influence device performance. Due to the high electric field generated in the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported in a-Si-based high-voltage TFTs, as well as from a nonsaturating I–V characteristic behavior similar to the short-channel effects found in FETs. A field plate was implemented to improve charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device I–V can be modeled with the existing Si-based FET models.
关键词： Flexible substrates,high-κ gate dielectrics,organic thin-film transistors (HVTFTs),high-voltage semiconductors
更新于2025-09-19 17:13:59
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High-Performance Ambient-Condition-Processed Polymer Solar Cells and Organic Thin-Film Transistors
摘要： Large-scale commercial synthesis of bulk-heterojunction (BHJ) solar cell materials is very challenging and both time and energy consuming. Synthesis of π-conjugated polymers (CPs) with uniform batch-to-batch molecular weight and low dispersity is a key requirement for better reproducibility of high-efficiency polymer solar cells. Herein, a conjugated polymer (CP) PTB7-Th, well known for its high performance, has been synthesized with high molecular weight and low dispersity in a closed microwave reactor. The microwave reaction procedure is known to be more controlled and consumes less energy. The precursors were strategically reacted for different reaction time durations to obtain the optimum molecular weight. All different CPs were well characterized using 1H NMR, gel permeation chromatography (GPC), UV?vis, photoluminescence (PL), electron spin resonance (ESR), and Raman spectroscopy, whereas the film morphology was extensively studied via atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXRD) techniques. The effect of molecular weight on a conventional BHJ solar cell with PC71BM acceptor was investigated to derive systematic structure?property relationships. The CP obtained after 35 min of reaction time and integrated into BHJ devices under ambient conditions provided the best performance with a power conversion efficiency (PCE) of 8.09%, which was quite similar to the results of CPs synthesized via a thermal route. An enhanced PCE of 8.47% was obtained for the optimized polymer (35 min microwave reaction product) when device fabrication was carried out inside a glovebox. The organic thin-film transistor (OTFT) device with the microwave-synthesized CP displayed better hole mobility (0.137 cm2 V?1 s?1) as compared to that with the thermally synthesized CP. This study also proved that the device stability and reproducibility of the microwave-synthesized CP were much better and more consistent than those of the thermally developed CP.
关键词： microwave reactor,π-conjugated polymers,organic thin-film transistors,polymer solar cells,bulk-heterojunction
更新于2025-09-19 17:13:59