- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors
摘要： Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching ION/IOFF ratio of approximately 105. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.
关键词： visible light photodetection,plasmon energy detection,ink-jet printing,zinc-oxide-based thin-film transistors,oxygen plasma treatment
更新于2025-09-19 17:13:59
-
[IEEE 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - Seoul, Korea (South) (2019.10.27-2019.11.2)] 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - A Neural Network for Detailed Human Depth Estimation From a Single Image
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： monolithic ICs,pulse measurements,zinc oxide,gate charge,dc switch,ionic semiconductors,RF switch,thin-film transistors (TFTs),Cutoff frequency
更新于2025-09-19 17:13:59
-
Oxygen Vacancy Controlled SiZnSnO Thina??Film Inverters with High Gain
摘要： Amorphous SiZnSnO (a-SZTO) thin film are succesfully deposited to control the electrical characteristics by changing the oxygen partial pressure [p(O2)] ratio during the deposition. As the p(O2) ratio increase, the on current, off current, and the field effect mobility (μFE) decrease and the threshold voltage (Vth) shift to the positive direction, gradually. This phenomenon occurred because the oxygen vacancies (VO) in the channel were suppressed due to the effect of oxygen injected during the deposition. To explore the possibility that the device can be applied to integrated thin film circuit and operate well in the application, the n-type only inverters are fabricated using VO controlled thin film transistors (TFTs). All inverters have clear voltage transfer characteristics (VTC) and well operated in the range of 3 V to 15 V of VDD. When Vth shift to positive direction in enhancement mode (E-mode), the voltage transition region (Vtr) of the inverter also shift to positive direction. The highest voltage gain is measured to be about 26.554 V/V at 15 V of VDD. It is proposed to be able to fabricate the inverters and control the transition value of VTC of the inverter simply by changing p(O2) ratio of E-mode TFT.
关键词： thin film transistors,n-type,amorphous oxide semiconductors,oxygen partial pressure
更新于2025-09-19 17:13:59
-
34.3: <i>Invited Paper:</i> Printing Pixel Circuits on Light Emitting Diode Array for AMLED Displays
摘要： An active matrix light emitting display module integrated with carbon nanotubes control circuits was fully printed. The high performance of super pure single-chirality carbon nanotube TFT provides super bright and low power consumption technologies for indoor and outdoor augmented reality that are highly desirable for civil and military display applications.
关键词： Aerosol Jet Printing,Active Matrix LED Display Module,Single Chirality Semiconducting Single-Walled Carbon Nanotubes,Thin Film Transistors,Light Emitting Diode Array
更新于2025-09-16 10:30:52
-
Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO <sub/>2</sub> treated by H <sub/>3</sub> PO <sub/>4</sub>
摘要： Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO2 immersed in 5% H3PO4 for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature. The huge EDL specific capacitance is 8.2 mF cm-2 at 20 Hz, and about 0.7 mF cm-2 even at 1 MHz. Both enhancement mode (Vth = 0.15 V) and depletion mode (Vth = -0.26 V) operation are realized by controlling the thickness of the self-assembled ITO semiconducting layer. Electrical characteristics with the equivalent field-effect mobility of 65.4 cm2 V-1 s-1, current on/off ratio of 2 × 106, and subthreshold swing of 80 mV per decade are demonstrated, which are promising for fast-switching and low-power electronics on temperature-sensitive substrates.
关键词： self-assembled,thin-film transistors,H3PO4,microporous SiO2,indium tin oxide,Low-voltage
更新于2025-09-16 10:30:52
-
[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Is Damp Heat Degradation of c-Si Modules Essentially Universal?
摘要： A pentacene (C22H14)-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current–voltage (I–V ) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V < VG < 20 V). The HVOTFT was evaluated with three different gate insulators to assess how the dielectric constant and interface states influence device performance. Due to the high electric field generated in the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported in a-Si-based high-voltage TFTs, as well as from a nonsaturating I–V characteristic behavior similar to the short-channel effects found in FETs. A field plate was implemented to improve charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device I–V can be modeled with the existing Si-based FET models.
关键词： Flexible substrates,high-κ gate dielectrics,organic thin-film transistors (HVTFTs),high-voltage semiconductors
更新于2025-09-16 10:30:52
-
Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays
摘要： This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.
关键词： low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs),Active-matrix organic light-emitting diode (AMOLED),leakage current prevention
更新于2025-09-16 10:30:52
-
Remarkable Improvement in Foldability of Polya??Si Thina??Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Polya??Si Thina??Film Transistor Used for Foldable Displays
摘要： Highly robust poly-Si thin-film transistor (TFT) on polyimide (PI) substrate using blue laser annealing (BLA) of amorphous silicon (a-Si) for lateral crystallization is demonstrated. Its foldability is compared with the conventional excimer laser annealing (ELA) poly-Si TFT on PI used for foldable displays exhibiting field-effect mobility of 85 cm2 (V s)-1. The BLA poly-Si TFT on PI exhibits the field-effect mobility, threshold voltage (VTH), and subthreshold swing of 153 cm2 (V s)-1, -2.7 V, and 0.2 V dec-1, respectively. Most important finding is the excellent foldability of BLA TFT compared with the ELA poly-Si TFTs on PI substrates. The VTH shift of BLA poly-Si TFT is ±0.1 V, which is much smaller than that (±2 V) of ELA TFT on PI upon 30 000 cycle folding. The defects are generated at the grain boundary region of ELA poly-Si during folding. However, BLA poly-Si has no protrusion in the poly-Si channel and thus no defect generation during folding. This leads to excellent foldability of BLA poly-Si on PI substrate.
关键词： grain boundary,polyimide substrates,protrusions,flexible low-temperature poly-Si thin-film transistors,blue laser annealing
更新于2025-09-16 10:30:52
-
Solution-Processed Oxide Complementary Inverter via Laser Annealing and Inkjet Printing
摘要： Metal–oxide–semiconductors (MOS) have become an ideal candidate for the next-generation optoelectronic device applications. However, high processing temperature and complicate processes are still tremendous challenge in developing solution-based complementary MOS (CMOS) inverter. In this article, for the first time, femtosecond (fs) laser was used to realize controllable annealing for solution-based CMOS inverter. The achievement of nonstoichiometric p-type oxide thin films was ascribed to the photo-assisted conversion of precursor to metal–oxide (M–O) lattices along with the formation of atom vacancies in oxide lattice due to carrier excitation and relaxation using laser annealing (LA). The field effect mobility of the p- and n-type M–O thin-film transistors (TFTs) with inkjet printing (IJP) and LA was 0.91 and 7.07 cm2/V·s, respectively. Moreover, location control capacity was exploited to separately anneal the p- and n-type oxide deposited with IJP for the fabrication of TFTs, which significantly simplified the fabrication process of the inverter. CMOS inverter with high noise margin and moderate voltage gain above 10 was also obtained. Our work significantly improved the ability to selectively manipulate the functionality and properties of the irradiated materials. The results demonstrated that logic gates based on all-oxide can be large area integrated using our strategy, exhibiting attractive properties and applications of the CMOS integrated circuits in oxide electronics.
关键词： p-type oxide semiconductor,inkjet printing (IJP),Complementary inverter,femtosecond (fs) laser annealing (LA),thin-film transistors (TFTs)
更新于2025-09-12 10:27:22
-
Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
摘要： Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10?7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.
关键词： gold-nanoparticles,phototransistors,plasmonic energy detection,spray pyrolysis,zinc oxide-based thin-film transistors
更新于2025-09-12 10:27:22