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P-1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back-channel-etched a-IGZO TFTs
摘要： The back-channel-etched (BCE) amorphous InGaZnO thin-film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self-heating effect can be used to account for this anomalous dependence of VTH on W and VD.
关键词： self-heating effect,drain voltage,threshold voltage,amorphous InGaZnO TFTs,channel width
更新于2025-09-23 15:23:52
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Hybrid ZnON-Organic Light Emitting Transistors with Low Threshold Voltage <5 V
摘要： The electrical and optical properties of inorganic–organic hybrid light emitting transistors (HLETs) are investigated, which are fabricated using the n-type semiconductor zinc-oxynitride (ZnON) as an electron transporting layer and the poly(p-phenylene vinylene)-based copolymer, Super Yellow (SY), as the light emitting layer. Additionally, the influence of various source (S)–drain (D) electrodes (Al, Ag, and Au) with different work functions (WFs) (4.1, 4.6, and 5.1 eV, respectively) on the performance of HLETs is studied. In order to increase the rate of hole injection from the metal electrodes and increase hole accumulation at the emissive layer, the use of a molybdenum oxide (MoOx) interlayer is also investigated. As a result, optimized devices using MoOx/Au hole injecting electrodes yield high brightness of up to 3.04 × 10^4 cd?m^?2 at a low threshold voltage of 4.79 V. This study provides valuable information about the role of the WF of S–D electrodes in HLETs, which may be exploited to improve the device performance of optoelectronic devices in the future.
关键词： zinc-oxynitride,light emitting transistors,work function,super yellow,low threshold voltage
更新于2025-09-23 15:23:52
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Graphene-Augmented Polymer Stabilization: Drastically Reduced and Temperature-Independent Threshold and Improved Contrast Liquid Crystal Device
摘要： Polymers reinforced with nano?llers, especially graphene in recent times, have continued to attract attention to realize novel materials that are cheap and also have better properties. At a di?erent level, encapsulating liquid crystals (LCs) in polymer networks not only adds mechanical strength, but could also result in device-based refractive index mismatch. Here, we describe a novel strategy combining the best of both these concepts to create graphene-incorporated polymer-stabilized LC (PSLC) devices. The presence of graphene associated with the virtual surface of the polymer network besides introducing distinct morphological changes to the polymer architecture as seen by electron microscopy brings out several advantages for the PSLC characteristics, which include 7-fold lowered critical voltage, its temperature invariance, and enhanced contrast ratio between ?eld-o? scattering/?eld-on transparent states. The results bring to fore the importance of working at very-dilute-concentration limits of the ?ller nanoparticles in augmenting the desired properties. These observations open up a new vista for polymer?graphene composites in the area of device engineering, including substrate-free smart windows.
关键词： temperature invariance,graphene,electro-optic properties,threshold voltage,polymer-stabilized liquid crystals
更新于2025-09-23 15:23:52
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An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
摘要： Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are key devices for next-generation power electronics. However, accurate determination of device parameters from 3-terminal characteristics is hampered by the presence of interface traps. Here we present a method that, in contrast to previous evaluation schemes, explicitly considers those defects. A well-tractable parametrization of the SiC/SiO2-specific interface trap spectrum is introduced that reflects the body of known data. With this ingredient, we develop an analysis that targets for an accurate determination of device parameters from simple 3-terminal characteristics. For its validation, we investigate MOSFETs with significantly different defect densities. The resulting parameters – charge carrier density, mobility and threshold voltage – are in excellent agreement with Hall effect investigations on the very same devices, avoiding systematic errors inherent to conventional evaluation techniques. With this adapted scheme, 4H-SiC power MOSFETs, even packaged, can be meaningfully characterized, speeding up innovation cycles in energy-saving power electronics.
关键词： mobility,Silicon carbide,Hall effect,interface traps,threshold voltage,MOSFET
更新于2025-09-23 15:23:52
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Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
摘要： In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of (cid:1)0.97 (t0.6) V and (cid:1)1.22 (t0.31) V in air and at hydrogen concentration of 9800 ppm, respectively, for the depletion (enhancement)-mode device. In addition, by employing the co-integrated FETs the transfer characteristics of the direct-coupled FET logic (DCFL) obviously vary under hydrogen ambience. The VOH value reduces and the VOL value increases in the DCFL with the measurement of hydrogen detection.
关键词： Threshold voltage,Hydrogen sense,Doping-channel field-effect transistor,Enhancement/depletion-mode,AlGaInP/InGaAs,Direct-coupled FET logic
更新于2025-09-23 15:22:29
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Carrier Transport Mechanisms Underlying the Bidirectional VTH Shift in p-GaN Gate HEMTs Under Forward Gate Stress
摘要： The threshold voltage (VTH) instability of p-GaN/AlGaN/GaN HEMTs was investigated under forward gate stress. A unique bidirectional VTH shift (ΔVTH) with the critical gate voltage (VG) of 6 V was observed. The carrier transport mechanisms underlying the ΔVTH were extensively investigated through the voltage-dependent, time-resolved, and temperature-dependent gate current. The gate current is decomposed into electron and hole current in three distinct regions with respect to VG, which are off-state for VG < 1.2 V (VTH), on-state for 1.2 V < VG < 5 V and “gate-injected” region for VG > 5 V. In off-state, the electrons were thermally activated and transport towards the gate, while electron-trapping governed by the space charge limited conduction (SCLC) in AlGaN barrier was observed in on-state and “gate-injected” region. Such an electron-trapping effect results in the positive VTH shift for VG < 6 V. Meanwhile, the marginal hole transport from gate by thermal activation was also captured by gate current, which features negligible impact on VTH. However, for VG > 6 V, a drastic hole injection triggered by high VG takes place that causes subsequent hole-trapping in AlGaN barrier and hole-injection into GaN buffer. The injected holes enhance the positive charge in the gate region and turned the positively shifted VTH into a negative shift.
关键词： hole injection,threshold voltage shift,p-GaN HEMT,electron trapping,carrier transport mechanisms,gate stress
更新于2025-09-23 15:22:29
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Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs
摘要： It is shown that an EC–0.90 eV trap in commercial AlGaN/GaN MISHEMTs grown on a Si (111) substrate is responsible for a ?1.8-V threshold voltage (VT) instability using a combination of defect spectroscopy and double-pulsed current–voltage measurements. The EC ? 0.90 eV trap is located in the GaN buffer and is emptied by high drain biases in pinch-off, which raises the trap above the Fermi level in the GaN buffer. This trap also exhibits both fast and slow recovery processes that are explained by the availability of free electrons throughout the depth of the GaN buffer and the trapping process that depletes the free electron concentration. TCAD modeling is used to demonstrate this process and also to show why there is not a significant increase in buffer leakage current after the large negative VT shift due to this trap. This demonstrates that optimizing buffer designs are critical for ideal device performance.
关键词： deep-level transient spectroscopy (DLTS),isothermal,GaN-on-Si,threshold voltage instability,metal-insulator-semiconductor high electron mobility transistors (MISHEMTs),Capture process,trap
更新于2025-09-23 15:22:29
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RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films
摘要： A self-limiting wet etching of metal thin films has been developed for the replacement metal gate patterning in advanced logic devices, which will have aggressively scaled gate length and fin pitches. A uniform and highly selective wet etching of polycrystalline TiN films is demonstrated by a diffusion-limiting oxide growth on the metal surfaces as well as a subsequent highly selective oxide removal.
关键词： replacement metal gate (RMG),multiple threshold voltage (multi-Vt),digital etch (DE)
更新于2025-09-23 15:22:29
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Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs
摘要： In nanoscale fully depleted silicon-on-insulator (FD-SOI) MOSFETs, the standard deviation of threshold voltage (σVth) caused by random dopant fluctuation (RDF) is an important parameter to predict the performance of transistors and circuits. In this paper, an analytic model of σVth considering both the dopant 'number' and dopant 'position' fluctuation in channels is proposed. A new model of σVth,num caused by 'number' is given and the method of obtaining the 'position' influence ratio Rp is discussed in this paper. Moreover, the simulation methods are analyzed in detail. The calculated σVth values in FD-SOI MOSFETs are compared with the Sentaurus TCAD simulation results at different channel lengths, channel doping concentrations, SOI film thicknesses, front gate oxide thicknesses, and buried-oxide thicknesses. The comparison shows that the proposed model matches well with the obtained numerical simulation results.
关键词： threshold voltage variation,analytical model,fully depleted silicon-on-insulator MOSFETs,Sentaurus TCAD simulation,random dopant fluctuation
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs
摘要： In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+-GaN source layer. It was found that the device with epitaxially-grown source region can suppress hysteresis in the transfer characteristics compared to that with implanted source region.
关键词： ion implantation,threshold voltage,epitaxial growth,hysteresis,GaN,trench,MOSFET
更新于2025-09-23 15:22:29