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Characterization of MgO/TiN bilayer deposited on cube-textured copper using pulsed-laser deposition technique
摘要： Here we demonstrate heteroepitaxial growth of MgO/TiN thin films on flexible metal foil of copper substrates using pulsed laser deposition. X-ray and electron diffraction measurements revealed that the epitaxial MgO/TiN bilayer was oriented along (002) direction. The large mismatch between TiN islands and Cu substrate was effectively reduced by the 5/6 and 6/7 variations of domains. Despite the local irregularity of misfit dislocations at TiN/Cu, the domain-matching epitaxy paradigm is a remarkably accurate theory. MgO/TiN bilayer is chemically homogeneous and Mg, Ti, or Cu atoms do not segregate into the low-angle grain boundaries regardless of MgO/TiN films thickness. Thus, it appears that thickness may be reduced up to the value in which TiN fully covers the rough surface of Cu tape. Unfortunately, issues related to the presence of in-plane TiN contraction, probably generated by the difference in thermal expansion coefficient, and the origin of misfit dislocations irregularity at TiN/Cu interface remain unresolved. Our findings can make a substantial contribution to further research on Cu-based coated conductors and help in better understanding the ways that MgO/TiN bilayer are grown on Cu tape.
关键词： titanium nitride,pulsed-laser deposition,magnesium oxide,copper,growth,epitaxy,domain-matching epitaxy
更新于2025-09-19 17:13:59
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Wrinkled titanium nitride nanocomposite for robust bendable electrodes
摘要： Electrical contacts and interconnections are critical components for all electronic devices. Bendable electrodes with enhanced electro-mechanical properties are highly desirable to develop innovative wearable electronic devices. Herein we report on a fabrication method for robust bendable coatings based on titanium nitride (TiN) thin films and silver nanowires (Ag NWs). TiN and TiN-AgNWs nanocomposites were deposited on polyethylene terephthalate (PET) substrates using a plasma enhanced pulsed laser deposition (PLD) technique. The resulting TiN coatings exhibit excellent adhesion to PET and their sheet resistance can be tuned using a dual frequency PLD process and further decreased by incorporating Ag NWs into the TiN layers. Sample sheet resistance was decreased down to values as low as 3.5 Ω/□, thanks to the formation of TiN-AgNWs nanocomposites. The electro-mechanical robustness of TiN based coatings were evaluated by four-probe resistance measurements in situ under cyclic bending tests. We show that the TiN-AgNWs nanocomposites surpass both ITO and Ag NWs coatings in terms of mechanical robustness and electrical conductivity respectively. These nanocomposites withstand high strain fatigue loading up to ε = 2.6%, keeping RS below 5 Ω/□. The data demonstrates that the incorporation of Ag NWs in TiN coatings improve the mechanical robustness, limiting the crack growth and propagation, with low optical transmittance decrease (≈11%). These results indicate that Ag NWs based nanocomposites are attractive materials for flexible electronic devices.
关键词： mechanical strain,titanium nitride,nanocomposite,ITO,flexible electrode,silver nanowires
更新于2025-09-19 17:13:59
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TiN-contained polymer-metal core-shell structured nanocone array: Engineering of sensor performance by controlling plasmonic properties
摘要： Metal nanostructures have great potential for optical label-free biosensors based on localized surface plasmon resonance (LSPR). The sensitivity of a metal nanostructure-based label-free biosensor (i.e., plasmonic sensor) depends on its plasmonic properties, which su?er a decrease in sensitivity by energy losses in the metal material. Here, we demonstrate an approach to improve the plasmonic properties of metal nanostructures by controlling the carrier density in the base polymer material using titanium nitride (TiN). It is expected that the light energy absorbed by TiN is converted into excitons, and it will assist LSPs in the metal nanostructure; thus, the losses of the metal material are compensated by the excitons excited in TiN. We designed a TiN-contained polymer-metal core-shell structured nanocone array (NCA), comprising TiN nanoparticles (NPs) in a polymer core and metal shell (Au or Ag), and realized improvement of the refractive index (RI) sensitivity of a label-free biosensor by optimizing the TiN-contained polymer composition. As a result, the TiN-contained polymer-metal NCA, with a TiN NP concentration of 10 wt% in the polymer core, had a 1.5-fold higher RI sensitivity than that of the same NCA without TiN NPs. The results of the resistance measurement of the metal surface with the TiN NP-contained polymer (10 wt%) under light exposure suggest the conversion of exposed light into LSPs of metal via TiN. It is suggested that plasmonic properties and sensor performances can be improved by the presented approach. Moreover, in DNA hybridization detection, an extremely low limit of detection of 117.5 fM was achieved.
关键词： Localized surface plasmon resonance (LSPR),Core-shell nanostructure,DNA detection,Carrier engineering,Biosensor,Titanium nitride
更新于2025-09-16 10:30:52
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Plasma enhanced atomic layer deposition of plasmonic TiN ultrathin films using TDMATi and NH3
摘要： Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma‐enhanced atomic layer deposition (PE‐ALD) of non‐stoichiometric TiN0.71 on lattice‐matched and ‐mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post‐deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post‐deposition was found to tune the plasmonic properties of the films, resulting in a blue‐shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.
关键词： optical properties,plasmonics,atomic layer deposition (ALD),thin film,titanium nitride
更新于2025-09-16 10:30:52
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CMOS-Compatible Titanium Nitride for On-Chip Plasmonic Schottky Photodetectors
摘要： Here, we propose a waveguide-integrated plasmonic Schottky photodetector (PD) operating based on an internal photoemission process with a titanium nitride plasmonic material. The theoretically examined structure employs an asymmetric metal?semiconductor?metal waveguide configuration with one of the electrodes being gold and the second being either gold, titanium, or titanium nitride. For the first time, we measured a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.697 eV. This barrier height will enable photodetection with a high signal-to-noise ratio when operating at a wavelength of 1550 nm. In addition to the measured optical properties of high absorption losses and reasonably large real part of the permittivity that are desired for this type of PD, titanium nitride is also compatible with easy integration on existing complementary metal?oxide?semiconductor technology. The use of titanium nitride results in a shorter penetration depth of the optical mode into the metal when compared to Ti, which in turn enhances the probability for transmission of hot electrons to the adjacent semiconductor, giving rise to an enhancement in responsivity.
关键词： titanium nitride,internal photoemission,CMOS-compatible,waveguide-integrated plasmonic Schottky photodetector,signal-to-noise ratio
更新于2025-09-16 10:30:52
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Absolute Scattering Cross-Sections of Titanium Nitride Nanoparticles Determined by Single-Particle Spectroscopy: Implications for Plasmonic Nanoantennas
摘要： Titanium nitride (TiN) nanostructures are promising building blocks for photothermal applications because of the surface plasmon-induced light absorption. However, compared to noble metal nanostructures, detailed analyses of the plasmonic responses of TiN nanostructures have been limited. In this work, by combining transmission electron microscopy (TEM) and single-particle spectroscopy, we determine absolute scattering cross-sections of individual TiN nanocubes (NCs). The key aspect of the developed methodology is placing a TiN NC on an ultrathin SiO2 membrane and performing the precise structural analysis and the scattering spectrum measurement on identical TiN NCs. Furthermore, by employing Au nanospheres as references, we quantitatively compare the scattering spectra with those obtained for TiN NCs and determine the absolute scattering cross-section as a function of NC size.
关键词： titanium nitride,nanoantenna,scattering,single particle spectroscopy,Plasmon
更新于2025-09-11 14:15:04
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Plasmonic visible-NIR photodetector based on hot electrons extracted from nanostructured titanium nitride
摘要： The superior plasmonic characteristics of transition metal nitrides have been widely considered for enhancing the performance of light-harvesting devices. We explore this fast-emerging field further and report here the successful implementation of titanium nitride (TiN) nanoparticles prepared by reactive magnetron sputtering in a broadband photodetector device geometry. X-Ray Photoelectron Spectroscopy study reveals the presence of two different phases, viz., titanium nitride and titanium oxynitride in the prepared TiN sample. These two different nitride phases lead to two plasmon absorption bands, one in the visible region and the other in the Near Infrared (NIR) region of the electromagnetic spectrum, which is a fascinating finding of this study. The fabricated photodetector shows appreciable photoelectrical response in the visible as well as in the NIR region due to plasmon induced charge separation aided by the TiN nanoparticles. Very high photoresponsivities of 158 mA/W and 230 mA/W of the device at wavelengths of 450 nm and 950 nm, respectively, make it very promising as a broadband photodetector. The corresponding Internal Quantum Efficiencies are found to be 48% and 35%, respectively, at those two particular wavelengths. The charge transport mechanism of the device is explained with an energy level diagram, which shows that the hot electrons produced from the decay of plasmon are responsible for the generation of photocurrent.
关键词： photodetector,visible-NIR,hot electrons,plasmonic,titanium nitride
更新于2025-09-11 14:15:04
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Performance improvement of thin-film silicon solar cells using transversal and longitudinal titanium nitride plasmonic nanogratings
摘要： Taking advantage of plasmonic nanostructures for light trapping in thin-film silicon solar cells has attracted ample attention among researchers. Titanium nitride (TiN) has recently been introduced as a promising material exhibiting plasmonic properties similar to gold while taking advantage of low cost, low loss, and CMOS compatibility. Moreover, utilization of TiN offers a good tunability since the optical properties of TiN depend on many fabrication parameters. In this work, transversal and longitudinal TiN nanograting arrays have been employed to act like perpendicular polarizers trapping the incident light in the active layer of the cell. Using optical and electrical simulations, it has been shown that the design provides a significant enhancement in the performance of thin-film silicon solar cells owing to the excitation of surface plasmon resonances and their resultant light trapping. Thanks to the employment of TiN nanogratings, the device offers a broadband absorption enhancement with a considerable improvement at the near infrared wavelengths in which the absorption of bare silicon layer is weak. The proposed thin-film cell results in short-circuit current and power conversion efficiency of about 26.46 mA/cm2 and 12.27%, respectively proving the proficiency of the design for performance improvement of thin-film photovoltaic systems.
关键词： Titanium nitride (TiN),Light trapping,Thin-film silicon solar cells,Plasmonic nanostructures
更新于2025-09-11 14:15:04
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Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering
摘要： Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.
关键词： room-temperature sputtering,optical properties,nanostructures,Titanium nitride,plasmonics
更新于2025-09-11 14:15:04
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Annealing effects on the properties of tin thin films
摘要： The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of ～8 nm/min. After deposition the samples were annealed for 1 h at 600 °C and 2 h at 700 °C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films.
关键词： RBS,annealing,sputtering,thin film,XRD,titanium nitride,TEM
更新于2025-09-09 09:28:46