- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Dual-Functional Long-Term Plasticity Emulated in IGZO-Based Photoelectric Neuromorphic Transistors
摘要： Indium–gallium–zinc-oxide (IGZO) photoelectric neuromorphic transistors with low-temperature atomic layer deposited Al2O3 gate dielectrics are fabricated. Dual-functional long-term plasticity, including long-term depression (LTD) and long-term potentiation (LTP), is emulated. The emulation of LTD is achieved by applying high-electrical pulse trains on the gate electrode. The LTP emulation is realized by applying light pulse trains on the IGZO channel layer. The operation mechanisms of the LTD and the LTP are discussed based on the electron/hole trapping in the Al2O3 gate dielectrics and the persistent photoconductivity of the IGZO channel layer.
关键词： Neuromorphic transistors,long-term plasticity,atomic layer deposition
更新于2025-11-25 10:30:42
-
Light-Stimulated Synaptic Transistors Fabricated by a Facile Solution Process Based on Inorganic Perovskite Quantum Dots and Organic Semiconductors
摘要： Implementation of artificial intelligent systems with light-stimulated synaptic emulators may enhance computational speed by providing devices with high bandwidth, low power computation requirements, and low crosstalk. One of the key challenges is to develop light-stimulated devices that can response to light signals in a neuron-/synapse-like fashion. A simple and effective solution process to fabricate light-stimulated synaptic transistors (LSSTs) based on inorganic halide perovskite quantum dots (IHP QDs) and organic semiconductors (OSCs) is reported. Blending IHP QDs and OSCs not only improves the charge separation efficiency of the photoexcited charges, but also induces delayed decay of the photocurrent in the IHP QDs/OSCs hybrid film. The enhanced charge separation efficiency results in high photoresponsivity, while the induced delayed decay of the photocurrent is critical to achieving light-stimulating devices with a memory effect, which are important for achieving high synaptic performance. The LSSTs can respond to light signals in a highly neuron-/synapse-like fashion. Both short-term and long-term synaptic behaviors have been realized, which may lay the foundation for the future implementation of artificial intelligent systems that are enabled by light signals. More significantly, LSSTs are fabricated by a facile solution process which can be easily applied to large-scale samples.
关键词： light-stimulated synaptic transistors,solution process,organic semiconductors,blended materials,inorganic halide perovskite quantum dots
更新于2025-11-19 16:56:42
-
Highly Stretchable, High‐Mobility, Free‐Standing All‐Organic Transistors Modulated by Solid‐State Elastomer Electrolytes
摘要： Highly stretchable, high-mobility, and free-standing coplanar-type all-organic transistors based on deformable solid-state elastomer electrolytes are demonstrated using ionic thermoplastic polyurethane (i-TPU), thereby showing high reliability under mechanical stimuli as well as low-voltage operation. Unlike conventional ionic dielectrics, the i-TPU electrolyte prepared herein has remarkable characteristics, i.e., a large specific capacitance of 5.5 μF cm?2, despite the low weight ratio (20 wt%) of the ionic liquid, high transparency, and even stretchability. These i-TPU-based organic transistors exhibit a mobility as high as 7.9 cm2 V?1 s?1, high bendability (Rc, radius of curvature: 7.2 mm), and good stretchability (60% tensile strain). Moreover, they are suitable for low-voltage operation (VDS = ?1.0 V, VGS = ?2.5 V). In addition, the electrical characteristics such as mobility, on-current, and threshold voltage are maintained even in the concave and convex bending state (bending tensile strain of ≈3.4%), respectively. Finally, free-standing, fully stretchable, and semi-transparent coplanar-type all-organic transistors can be fabricated by introducing a poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid layer as source/drain and gate electrodes, thus achieving low-voltage operation (VDS = ?1.5 V, VGS = ?2.5 V) and an even higher mobility of up to 17.8 cm2 V?1 s?1. Moreover, these devices withstand stretching up to 80% tensile strain.
关键词： free-standing all-organic transistors,stretchable and conformal electronics,high-mobility,elastomer electrolyte,low-voltage operation
更新于2025-11-14 17:28:48
-
Flexible and stable organic field-effect transistors using low-temperature solution-processed polyimide gate dielectrics
摘要： Polyimide (PI) has been widely used as a gate dielectric due to its remarkable thermal stability, chemical resistance, and mechanical flexibility. However, the high processing temperature and high surface energy of PI gate dielectrics hinder the realization of flexible and reliable electronic applications with low-cost manufacturing. Here, a low-temperature solution-processed organic field-effect transistor (OFET) is successfully demonstrated using a fully imidized soluble PI gate dielectric. The low temperature processability of soluble PI gate dielectrics is confirmed by investigating the effect of annealing temperature on the dielectric properties and electrical characteristics. By blending 6,13-Bis(triisopropylsilylethynyl)pentacene with polystyrene, the reliability of OFET is considerably enhanced while maintaining high device performance. As a result, OFETs exhibit excellent flexibility and can be integrated with ultrathin parylene substrates without degrading device performance. This work presents the steps to develop flexible and reliable electronic applications with low-cost manufacturing.
关键词： organic field-effect transistors,solution-processed,polyimides,low-temperature,operational stability
更新于2025-11-14 15:19:41
-
High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric
摘要： In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.
关键词： metal-oxide semiconductors,thin-film transistors,high-k dielectric,high mobility,inkjet printing
更新于2025-11-14 15:19:41
-
Mobility Evaluation of BTBT Derivatives: Limitation and Impact on Charge Transport
摘要： Amongst contemporary semiconductors many of the best performing materials are based on [1]benzothieno[3,2-b][1]benzothiophene (BTBT). Alkylated derivatives of these small molecules not only provide high hole mobilities but can also be easily processed by thermal vacuum or solution deposition methods. Over the last decade numerous publications have been investigating molecular structures and charge transport properties to elucidate what makes these molecules so special. However, the race towards ever higher mobilities resulted in significantly deviating values, which exacerbates linking molecular structure to electronic properties. Moreover, a recently arisen debate on overestimation of organic field-effect transistor mobilities calls for a revaluation of these numbers. We synthesised and characterised four BTBT derivatives with either one or two alkyl chains (themselves consisting of either eight or ten carbon atoms), and investigated their spectroscopic, structural and electrical properties. By employing two probes, gated 4-point probe and gated van der Pauw measurements, we compare field effect mobility values at room and low temperatures, and discuss their feasibility and viability. We attribute mobility changes to different angles between molecule planes and core-to-core double layer stacking of asymmetric BTBT derivatives and show higher mobilities in the presence of more and longer alkyl chains. A so called “zipper effect” brings BTBT cores in closer proximity promoting stronger intermolecular orbital coupling and hence higher charge transport.
关键词： charge transport,mobility,BTBT,organic electronics,organic transistors
更新于2025-10-23 16:08:52
-
Scaling of High-Performance Organic Permeable Base Transistors
摘要： Organic permeable-base transistors (OPBTs) show potential for high-speed, flexible electronics. Scaling laws of OPBTs are discussed and it is shown that OPBT performance can be increased by reducing their effective device area. Comparing the performance of optimized OPBTs with state-of-the-art organic field-effect transistors (OFETs), it is shown that OPBTs have a higher potential for an increased transit frequency. Not only do OPBTs reach higher transconductance values without the need for sophisticated structuring techniques, but they are also less sensitive to parasitic contact resistances. With the help of a 2D numerical model, the reduced contact resistances of OPBTs are explained by a homogeneous injection of current across the entire emitter electrode, compared to injection in a small area along the edge of the source of OFETs.
关键词： scaling,injection,organic permeable-base transistors,contact resistance,transit frequency
更新于2025-10-22 19:50:37
-
Performance improvement in photosensitive organic field effect transistor by using multi-layer structure
摘要： In this study, a new approach was introduced for Photo-OFETs as a multi-layer structure. Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) and Copper(II) phthalocyanine (CuPc) thin films were used as two different active photo-absorber layers in the same device structure. Poly(methyl methacrylate) (PMMA) was used as a dielectric layer and all devices were fabricated with a top-gate bottom-contact configuration. In order to investigate the effect of the location of each layer on the Photoresponsive organic field-effect transistors (Photo-OFET) performance, five different devices in various structures were produced and analyzed. Surface properties of active layers have been investigated via Atomic Force Microscopy (AFM) and effects of surface roughness on device performance have been discussed. P3HT/CuPc/P3HT multi-layered structure exhibited the best performance in terms of photoresposivity(as 45 mA/W) and photosensitivity (~ 2x103). Photo-OFET based on a multi-layer structure demonstrated superior performance with wider absorbance spectrum region compared to conventional single component devices of P3HT or CuPc. The proposed multi-layer structure can be a model to improve the realization of high performance Photo-OFETs.
关键词： Photoresponsive organic field-effect transistors,Organic field effect transistors,Multilayer structure,Poly(3-hexylthiophene),Photosensitivity,Poly(methyl methacrylate)
更新于2025-09-23 15:23:52
-
Modulation the electronic property of 2D monolayer MoS2 by amino acid
摘要： 2D molybdenum disulfide (MoS2) has a strong potential for the detection of biomolecules, however, the specific interactions between individual amino acids and MoS2 surface are still unclear. Herein, the adsorption properties and electronic structures of amino acid/MoS2 systems were investigated systematically for the 20 standard amino acids based on density functional theory. The adsorption strength of amino acids on MoS2 monolayer decreases in the following order: TRP > ARG > PHE > TYR > LYS > HIS > PRO > ASN > MET > LEU > ILE > VAL > GLU > GLN > THR > ASP > CYS > SER > ALA > GLY. The band gap of amino acid/MoS2 system is determined by the energy level of HOMO orbit of the adsorbed amino acid, in which the higher energy level of HOMO orbit will result in a smaller band gap. As proof of concept, optical and electrical detection of the MoS2 based transistors with and without amino acid molecules (TRP and CYS) were studied. Adsorption of amino acids on a MoS2 surface allows their chemical information to be transformed into distinct analytically optical and electronic signals, which opens up new possibilities for fabricating novel MoS2 based highly selective biosensors.
关键词： Amino acid,MoS2,Density functional theory,Field effect transistors
更新于2025-09-23 15:23:52
-
A New A-D-A’-D-A Conjugated Molecule Entailing Diazapentalene Unit for n-Type Organic Semiconductor
摘要： Conjugated molecules with low lying LUMO levels are demanding for the development of air stable n-type organic semiconductors. In this paper, we report a new A-D-A’-D-A conjugated molecule (DAPDCV) entailing diazapentalene (DAP) and dicyanovinylene groups as electron accepting units. Both theoretical and electrochemical studies manifest that the incorporation of DAP unit in the conjugated molecule can effectively lower the LUMO energy level. Accordingly, thin film of DAPDCV shows n-type semiconducting behaviour with electron mobility up to 0.16 cm2·V-1·s-1 after thermal annealing under N2 atmosphere. Moreover, thin film of DAPDCV also shows stable n-type transporting property in air with mobility reaching 0.078 cm2·V-1·s-1.
关键词： organic field-effect transistors,dicyanovinylene groups,n-type semiconductors,diazapentalene
更新于2025-09-23 15:23:52