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Well-grown low-defect MAPbI3–xClx films for perovskite solar cells with over 20% efficiency fabricated under controlled ambient humidity conditions
摘要： The conventional MAI [(CH3NH3I (MAI)):PbI2:PbCl2= 3 : 0 : 1 [abbreviated as (3:0:1)]] precursor solution is known to result in CH3NH3PbI3–xClx films with large grain sizes when processed in an inert atmosphere, but it gives non-uniform perovskite films containing lots of voids and cracks when processed in ambient air. Furthermore, a dramatically longer annealing time (usually 100 min) is required for these films (3:0:1) due to the slow formation of the MAPbI3 phase via MACl loss, which is not conducive to perovskite film formation under ambient conditions due to perovskite degradation upon long exposure to moisture. Pure MAPbI3 films can be formed very rapidly from (1:1:0) (MAI:PbI2:PbCl2= 1 : 1 : 0) solution within a short annealing time, but they show small grain sizes and poor film quality. This work demonstrated that a fractional substitution of PbI2 with PbCl2 in the ([MAI]:[PbI2]= 1 : 1) precursor solution has a significant influence on film morphology and quality in terms of crystallization rate, grain size, crystallinity, and trap density of the formed perovskite film. Perovskite films can be formed with 5-min annealing at 100 °C from the precursor (MAI: PbI2:PbCl2= 1: 0.8 : 0.2) processed in ambient air (humidity, 20% RH), exhibiting more uniform, increased grain size and higher film quality with reduced trap densities compared to film (1:1:0), thus leading to significantly improved power conversion efficiency (PCE), from 16.7% for perovskite solar cells (PrSCs) based on film (1:1:0) to 20.04% for the cell based on film (1:0.8:0.2). Further, the effects of R (R= [MAI]/[PbI2+PbCl2]) on morphology, hole mobility, carrier lifetime and efficiency of PrSCs were systematically and thoroughly investigated. This study found that MAPbI3–xClx at R=1 can enable the highest hole mobility and longest carrier lifetime, thus giving the best performance at R=1.
关键词： mixed halide perovskite solar cells,lead chloride,grain size,trap density,crystal growth intermediates
更新于2025-09-12 10:27:22
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An ultrastable laser system at 689 nm for cooling and trapping of strontium
摘要： We present a 689-nm cavity-based laser system for cooling and trapping strontium atoms. The laser is stabilized to a high-finesse cavity by the Pound–Drever–Hall technique, exhibiting a frequency stability in the 10?14 range for averaging times up to 100 s. A cavity drift of 8 kHz per day is mapped out and compensated. At short times, the laser exhibits a linewidth of a few kilohertz. With this laser system, we realize a magneto-optical trap of strontium operated on the narrow inter-combination transition yielding sub-microkelvin temperatures, and demonstrate absorption spectroscopy on the strontium inter-combination line.
关键词： cooling and trapping,magneto-optical trap,strontium,Pound–Drever–Hall technique,ultrastable laser
更新于2025-09-11 14:15:04
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A single-laser alternating-frequency magneto-optical trap
摘要： In this paper, we present a technique for magneto-optical cooling and trapping of neutral atoms using a single laser. The alternating-frequency magneto-optical trap (AF-MOT) uses an agile light source that sequentially switches between cooling and repumping transition frequencies by tuning the injection current of the laser diode. We report on the experimental demonstration of such a system for 87Rb and 85Rb based on a microintegrated extended cavity diode laser performing laser frequency jumps of up to 6.6 GHz with a tuning time in the microsecond regime and a repetition rate of up to 7.6 kHz. For that, a combination of a feed-forward for coarse frequency control and a feedback for precise locking was used. We discuss the results of the AF-MOT characterization in terms of atom numbers and cloud temperature for different operation parameters.
关键词： alternating-frequency,single-laser,neutral atoms,cooling and trapping,magneto-optical trap
更新于2025-09-11 14:15:04
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - The Role of Trap Symmetry in an Atom-Chip Interferometer above the Bose-Einstein Condensation Threshold
摘要： Cold atom interferometers have demonstrated excellent performance and hold great prospects for time, gravity, acceleration and rotation measurements. Trapped interferometers, for example using atom chips, can potentially enable portable applications of theses sensors. Atom chip interferometers have been successfully demonstrated using Bose-Einstein condensates but are subject to the effect of atom-atom interactions which cause phase decoherence. In this study, we proposed an atom chip interferometer using a gas just above the condensation threshold to reduce the interaction effects. This proposal is similar to white light interferometry in the sense that the difference between the optical paths of the two arms must be close to zero to observe fringes. In a trapped interferometer this condition is analogous to maximizing the degree of symmetry between the two trapping potentials. We demonstrated that if the two trapping potentials are harmonic with slightly different curvatures inhomogeneous dephasing arises. This leads to a typical contrast decay time. Here we use 87Rb in the two states |a>=|F=1,mF=-1> and |b>=|F=2,mF=2>. Both states are trapped by the same magnetic field created by an atom chip. As described by the Breit-Rabi formula, the energies of the two levels |a> and |b> have a slightly different magnetic field dependence. We can use this difference to fine tune the curvature difference between the two trapping potentials. We perform Ramsey sequences and record the fringes as a function of the Ramsey time for several temperatures and values of curvature difference. We find a good agreement with the above formula. Coherence times of order 1s have been observed. We will describe the experiment, the model used to extract the contrast decay time and the limitations of this model due to atom interactions. The results open the way for experimental demonstration of atom chip accelerometers and gyroscopes.
关键词： trap symmetry,Ramsey sequences,atom-chip interferometer,Bose-Einstein condensation,coherence times
更新于2025-09-11 14:15:04
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Fast Electron and Slow Hole Relaxation in InP-Based Colloidal Quantum Dots
摘要： Colloidal InP-based quantum dots are a promising material for light-emitting applications as an environment friendly alternative to their Cd-containing counterparts. Especially for their use in optoelectronic devices, it is essential to understand how charge carriers relax to the emitting state after injection with excess energy and if all of them arrive at this desired state. Herein, we report on time-resolved differential transmission measurements on colloidal InP/ZnS and InP/ZnSe core/shell quantum dots. By optically exciting and probing individual transitions, we are able to distinguish between electron and hole relaxation. This in turn allows us to determine how the initial excess energy of the charge carriers affects the relaxation processes. According to the electronic level scheme, one expects a strong phonon bottleneck for electrons, while holes should relax easier as their energy levels are more closely spaced. On the contrary, we find that electrons relax faster than holes. The fast electron relaxation occurs via an efficient Auger-like electron-hole scattering mechanism. On the other hand, a small wave function overlap between core and shell states slows the hole relaxation down. Additionally, holes can be trapped at the core/shell interface leading to either slow detrapping or nonradiative recombination. Overall, these results demonstrate that it is crucial to construct devices enabling the injection of charge carriers energetically close to their emitting states in order to maximize the radiative efficiency of the system.
关键词： InP,differential transmission spectroscopy,phonon bottleneck,charge carrier relaxation,trap states,electron-hole scattering,colloidal quantum dots
更新于2025-09-11 14:15:04
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Spontaneous Enhancement of the Stable Power Conversion Efficiency in Perovskite Solar Cells
摘要： The power conversion efficiency (PCE) of lead-halide perovskite solar cells (PSCs) is reported to increase over a period of days after their fabrication while they are stored in dark. Thus far, effects underlying this spontaneous enhancement are not understood. This work investigates the phenomenon for a variety of multi-cation-halide PSCs with different perovskite compositions and architectures. The observations reveal that spontaneous enhancement is not restricted to specific charge-transport layers or perovskite compositions. The highest PCE observed in this study is the enhanced stable PCE of 19% (increased by 4% absolute). An increased open-circuit voltage is the primary contributor to the improved efficiency. Using time-resolved photoluminescence measurements, initially-present low-energy states are identified that disappear over a storage period of a few days. Furthermore, trap states probed by thermally stimulated current technique exist in pristine PSCs and strikingly decrease for stored devices. In addition, ideality factor approaches unity and X-ray diffraction analyses show a lattice strain relaxation over the same period of time. These observations indicate that spontaneous enhancement of the PSCs is based on a reduction in trap-assisted non-radiative recombination possibly due to strain relaxation. Considering the demonstrated generality of spontaneous enhancement for different compositions of multi-cation-halide PSCs, our results highlight the importance of determining absolute PCE increase initiated by spontaneous enhancement for developing high-efficiency PSCs.
关键词： spontaneous enhancement,perovskite solar cells,power conversion efficiency,trap states,strain relaxation
更新于2025-09-11 14:15:04
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Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping and the Nature of the Relevant Trap States
摘要： Interfaces are crucial factors in shaping the properties of colloidal quantum dots (QDs), in particular the size-dependent optical properties that are a hallmark of these materials. However, the role played by the interfaces associated with QDs on the kinetics of photoluminescence (PL) decay of these nanocrystals is not fully understood even for the most extensively investigated II-VI QDs. In particular, interfaces are a hotbed of trapping sites over which control is essential for efficient performance of QD-based devices, because traps condition PL lifetimes and may be related to PL intermittency. In this work, we analyze the room-temperature PL decay of drop-cast films of CdSe/ZnS QDs varying a number of factors (casting solvent, capping ligands, core/shell interface character). We show how the use of a function that accounts for reversible trapping of photogenerated charge carriers with physically meaningful parameters (time constant, trapping and detrapping rate constants, and average number of traps per QD) can provide valuable information concerning the relevant interfaces, and therefore the nature of the trap states, involved in the recombination of those charge carriers. This approach should be applicable to QDs of a variety of compositions as well as materials beyond inorganic semiconductors.
关键词： photoluminescence decay,trap states,reversible trapping,CdSe/ZnS QDs,colloidal quantum dots
更新于2025-09-11 14:15:04
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Atomic-layer deposition of crystalline BeO on SiC
摘要： For the ?rst time, an epitaxial beryllium oxide (BeO) ?lm was grown on 4H silicon carbide (4H-SiC) by atomic layer deposition (ALD) at a low temperature of 250 °C. The BeO ?lm had a large lattice mismatch with the substrate (> 7–8%), but it was successfully grown to a single crystal by domain-matching epitaxy (DME). The bandgap energy, dielectric constant, and thermal conductivity properties of crystalline BeO are suitable for power transistors that require low leakage currents and fast heat dissipation in high electric ?elds. Physical characterization con?rmed the single-crystalline BeO (0 0 2). Raman analysis showed that the E1 and A1 phonon modes of ALD BeO were intermixed with the E2 and A1 phonon modes of SiC, resulting in a signi?cant increase in phonon intensity. After heat treatment at a high temperature, a small amount of SiO2 interfacial oxide was formed but the stoichiometry of BeO was maintained. From the capacitance-voltage (C-V) curves, we obtained a dielectric constant of 6.9 and calculated a low interface trap density of 6 × 1010 cm?2·eV?1 using the Terman method at Ec-Et = 0.6 eV. The high bandgap, thermal conductivity, and excellent crystallinity reduced the dangling bonds at the interface of BeO-on-SiC.
关键词： Interface trap density,Atomic layer deposition,Domain matching epitaxy,Silicon carbide,Beryllium oxide
更新于2025-09-11 14:15:04
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Three-dimensional device simulation of random telegraph noise spectroscopy with Coulomb energy variation of the trap in high- <i>k</i> gate oxide
摘要： The random telegraph noise (RTN) time constants, capture (τc) and emission (τe) times, have been extensively used to identify the trap position in the gate oxide by comparing the measured τc-over-τe ratio with the Shockley–Read–Hall (SRH) statistics. However, various factors have been shown to affect the accuracy of the extracted trap depth from the SRH-type models, such as three-dimensional (3D) device electrostatics, atomistic doping, metal gate granularity, and Coulomb energy variation (CEV) of the trap. Focusing on CEV in this work, we assume the trap in gate oxide can be regarded as a floating island and then numerically studied the CEV of the trap with 3D drift-diffusion simulation. Analyzing the simulation data, the extracted trap depth without considering CEV in the SRH statistics are quantitatively compared with the data involved CEV.
关键词： CEV,trap depth,3D device simulation,RTN,random telegraph noise,Coulomb energy variation,high-k gate oxide
更新于2025-09-10 09:29:36
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Broadband Defects Emission and Enhanced Ligand Raman Scattering in 0D Cs <sub/>3</sub> Bi <sub/>2</sub> I <sub/>9</sub> Colloidal Nanocrystals
摘要： Excitonic 0D and 2D lead-halide perovskites have been recently developed and investigated as new materials for light generation. Here broadband (>1 eV) emission from newly synthesized 0D lead-free colloidal Cs3Bi2I9 nanocrystals (NCs) is reported. The nature of their emissive states as well as the relative dynamics which are currently hotly debated are investigated. In particular, it is found that the broadband emission is made by the coexistence of emissive excitons and sub-bandgap emissive trap-states. Remarkably, evidence of enhanced Raman scattering from the ligands is observed when attached to the NCs surface, an effect that is preliminarily attributed to strong exciton-ligands electronic coupling in these systems.
关键词： trap-states emission,enhanced Raman scattering,broadband emission,lead-free perovskites,0D nanocrystals
更新于2025-09-10 09:29:36