GaAs Quantum Dot in a Parabolic Microcavity Tuned to ⁸⁷ Rb D <sub/>1</sub>

摘要： We develop a structure to efficiently extract photons emitted by a GaAs quantum dot tuned to Rubidium. For this, we employ a broadband microcavity with a curved gold backside mirror which we fabricate by a combination of photoresist reflow, dry reactive ion etching in an inductively coupled plasma and selective wet chemical etching. Precise reflow and etching control allows us to achieve a parabolic backside mirror with a short focal distance of 265 nm. The fabricated structures yield a predicted (measured) collection efficiency of 63 % (12 %), an improvement by more than one order of magnitude compared to unprocessed samples. We then integrate our quantum dot parabolic microcavities onto a piezoelectric substrate capable of inducing a large in-plane biaxial strain. With this approach, we tune the emission wavelength by 0.5 nm/kV, in a dynamic, reversible and linear way, to the Rubidium D1 line (795 nm).