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Analysis of Super-Steep Subthreshold Slope Body-Tied SOI MOSFET and its Possibility for Ultralow Voltage Application
摘要： In this paper, we review a super-steep subthreshold slope (SS) (< 1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) fabricated with 0.15 μm SOI technology and discuss the possibility of its use in ultralow voltage applications. The mechanism of the super-steep SS in the BT SOI MOSFET was investigated with technology computer-aided design simulation. The gate length/width and Si thickness optimizations promise further reductions in operation voltage, as well as improvement of the ION/IOFF ratio. In addition, we demonstrated control of the threshold voltage and hysteresis characteristics using the substrate and body bias in the BT SOI MOSFET.
关键词： body-tied,SOI,ultralow power,floating-body,steep subthreshold slope
更新于2025-09-23 15:22:29
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[IEEE 2019 14th European Microwave Integrated Circuits Conference (EuMIC) - Paris, France (2019.9.30-2019.10.1)] 2019 14th European Microwave Integrated Circuits Conference (EuMIC) - Ultralow Power, 3.15 mW, 76.7 GHz Digitally Controlled Oscillator in 65 nm CMOS for High Data-Rate Application
摘要： This paper presents an ultralow power 1-bit digitally controlled oscillator (DCO) for the application in high data-rate FSK transmitters. To design a low-power DCO, minimising the loss of the LC tank is very critical. Hence, a high quality factor (Q) multi?nger capacitor and a high-Q centre-tapped inductor are proposed and designed. Simulated Q of the capacitor is more than 45 from 70 GHz to 80 GHz. It is at least 4.5 times higher than a typical metal-insulator-metal capacitor (MIMCAP). The proposed DCO based on the designed high-Q passives is fabricated in standard 65 nm CMOS. Measured fOSC are 74.1 GHz and 76.7 GHz in the on- and off-state of the switch, respectively. It consumes only 3.15 mW DC power from a supply of 0.75 V which to the authors’ knowledge is the lowest power consumption reported so far in this frequency range.
关键词： high Q capacitor,FSK,digitally controlled oscillator (DCO),Ultralow power
更新于2025-09-11 14:15:04
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A cm-Scale 2.4-GHz Wireless Energy Harvester With NanoWatt Boost Converter and Antenna- Rectifier Resonance for WiFi Powering of Sensor Nodes
摘要： The widespread use of WiFi in the 2.4-GHz ISM band creates the potential for RF powering using WiFi radios. This paper presents the design of a cm-scale RF-energy harvester including antenna, rectifier, and dc–dc boost converter for RF powering in the 2.4-GHz ISM band. The rectifier and boost converter are designed while considering cold-start operation and nanowatt-scale available power from the rectifier for RF incident power <?33 dBm. Low-power design in the power management unit and converter leads to ～1-nW quiescent power. The harvester implementation in 65-nm CMOS occupies 1.6 mm2 while the antenna occupies 1.27 cm2. The proposed design optimization approach leads to a sensitivity of ?33 dBm in cold start and ?36 dBm in the primary mode for 1-V output, translating to ～1.4× and ～2× improvement in range compared to prior art. Measurements using a commercial WiFi TX demonstrate the ranges of up to 1.25 m for 14-dBm output power with 1.3% TX duty-cycling in WiFi access-point mode, demonstrating the feasibility of powering sensors from RF power beacons in the 2.4-GHz ISM band as well as from background WiFi transmissions.
关键词： wireless powering,co-design,Antenna,ultralow power,WiFi charging,power management,sensitivity,boost converter,rectifier,RF,cold start,energy harvesting
更新于2025-09-09 09:28:46