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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Cold Cathode Based Microwave Devices for Current and Future Systems
摘要： We report ongoing efforts to achieve reliable field emitter (FE) cathode operation for high current electron beam generation in RF microwave devices. These efforts include testing of cold cathode traveling wave tubes, high average power cathode-only testing, and evaluating cathode emission variation over long operating periods in a microwave device vacuum environment. Finally, looking toward future needs, emittance reduction is being addressed to allow cold cathode operation in the mm-wave frequency regime.
关键词： field emitter array,TWT,traveling wave tube,microwave amplifier,cold cathode,vacuum electronics
更新于2025-09-23 15:21:21
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A WSe <sub/>2</sub> vertical field emission transistor
摘要： We report the first observation of a gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ～100 V μm?1 and exhibits good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on the WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics.
关键词： WSe2,field emission,monolayer,transistor,vacuum electronics
更新于2025-09-19 17:15:36