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Reference Module in Materials Science and Materials Engineering || Wafer Bonding
摘要： Wafer bonding has been an important and critical technology in the development of micromachined sensors, actuators, microsystems, and their packaging for many decades. It is also being used in the fabrication of integrated circuits (ICs) and the formation of composite materials and wafers needed in advanced circuit technologies. Wafer, or die, bonding refers to the process whereby two or more wafers of similar or dissimilar materials are, often permanently, attached or bonded together. The individual wafers might have already been through previous fabrication steps to form various features on them, or might just be plain wafers.
关键词： Wafer Bonding,Microsystems,ICs,Packaging,MEMS
更新于2025-09-23 15:21:21
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<i>(Invited)</i> Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review
摘要： We developed high gettering capability silicon wafers for advanced CMOS image sensors using hydrocarbon molecular ion implantation and surface activated direct wafer bonding (SAB). We found that this novel wafer has three unique characteristics for the improvement of CMOS image sensor device performance. The first is metallic impurity gettering capability in the hydrocarbon ion implantation projection range during CMOS device fabrication. The second is the oxygen out-diffusion barrier effect; this wafer can control out-diffusion to the device active region from the CZ grown silicon substrate during CMOS device heat treatment. The third is the hydrogen passivation effect; hydrogen passivates to the Si/SiO2 gate oxide interface state defects which out-diffuse to the device active region from the hydrocarbon ion implantation projection range during the CMOS device fabrication. Moreover, we demonstrated that this novel wafer can improve the pn-junction leakage current under the actual device fabrication.
关键词： CMOS image sensors,hydrocarbon molecular ion implantation,surface activated direct wafer bonding,gettering capability,oxygen out-diffusion barrier,hydrogen passivation
更新于2025-09-23 15:21:21
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Study on void reduction in direct wafer bonding using Al <sub/>2</sub> O <sub/>3</sub> /HfO <sub/>2</sub> bonding interface for high-performance Si high- <i>k</i> MOS optical modulators
摘要： We have investigated the direct wafer bonding (DWB) method with a thin bonding dielectric interface to fabricate Si high-k MOS optical modulators with a thin equivalent oxide thickness (EOT). To suppress void generation on the bonded wafer during high-temperature annealing, we examined the high-k dielectric bonding interfacial layers, such as Al2O3 and HfO2. We found that the Al2O3/HfO2 bilayer enables void-less wafer bonding in conjunction with pre-bonding annealing at 700 °C. By using the 0.5-nm Al2O3/2.0-nm HfO2 bonding interface, the density of voids is reduced by three orders of magnitude as compared with that in the case of using the Al2O3 bonding interface. We achieved a density of voids of approximately 2 ' 10%3 cm%2 even when the bonded wafer is annealed at 700 °C. By thermal desorption spectroscopy (TDS), we found that degassing from the bonding interface is successfully suppressed by the introduction of the HfO2 layer and the pre-bonding annealing at 700 °C, which are considered to suppress void generation. Wafer bonding with thin Al2O3/HfO2 high-k bonding interface is promising for Si high-k MOS optical modulators.
关键词： Al2O3,void reduction,MOS optical modulators,high-k dielectric,HfO2,direct wafer bonding
更新于2025-09-23 15:21:01
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Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement
摘要： This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of (cid:1)8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C-SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.
关键词： piezoresistance,wafer bonding,silicon carbide,MEMS,strain engineering
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Dark Current Analysis of Vertical p-i-n Photodetectors on a Germanium-on-Insulator Platform
摘要： Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.
关键词： Ge-on-insulator,photodetector,activation energy,direct wafer bonding
更新于2025-09-16 10:30:52
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Development and Analysis of Wafer-Bonded Four-Junction Solar Cells Based on Antimonides With 42% Efficiency Under Concentration
摘要： The highest solar cell efficiencies today are reached with four-junction devices under concentrated illumination. The optimal bandgap combination for realistic four-junction cells is modelled to be 1.89/1.42/1.05/0.68 eV and indeed promises for efficiencies >50%. We present the development and analysis of a wafer-bonded four-junction solar cell based on GaInP/GaAs/GaInAs//GaInAsSb. This concept allows for the implementation of these ideal bandgaps and exhibits at present an efficiency of 42.0±2.5% at a concentration of 599x AM1.5d. The present loss mechanisms in this device are analyzed, which are dominated by current losses due to mismatched subcell currents and absorbing passive layers. Under the assumption of proper current matching, this device would achieve an efficiency above 44%.
关键词： metal-organic vapour phase epitaxy (MOVPE),multijunction solar cells,wafer bonding,Antimonides,four-junction solar cells
更新于2025-09-16 10:30:52
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Strategy toward ultra-high-resolution micro-LED displays by bonding interface-engineered vertical stacking and surface passivation
摘要： In this paper, we have proposed the strategy to fulfill the vertically stacked subpixel (VSS) micro-light-emitting diodes (μ-LEDs) for future ultra-high resolution microdisplays. At first, to vertically stack the LED with different colors, we have successfully adopted the bonding interface engineered monolithic integration method by using SiO2/SiNx distributed Bragg reflectors (DBRs). It was found that an intermediate DBR structure can be performed as the bonding layer and the color filter, which can reflect and transmit desired wavelengths the bonding interface. Furthermore, the optically pumped μ-LEDs array with 0.4 μm pitch corresponding to ultra-high-resolution of 63500 PPI was successfully fabricated by using typical semiconductor processing, including electron-beam lithography. Compared with pick-and-place with the limitation of the machine alignment accuracy, there is a significant improvement for fabricating the high-density μ-LEDs. Finally, we have systematically investigated the effects of surface traps by using time-resolved photoluminescence (TRPL) and two-dimensional simulation. These results clearly demonstrated that performance improvements could be possible by employing the optimal passivation techniques according to diminishing the pixel size for low power and highly-efficient microdisplays.
关键词： ultra-high-resolution,micro-LEDs,wafer bonding,distributed Bragg reflectors,surface passivation
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Dark Current Analysis of Vertical p-i-n Photodetectors on a Germanium-on-Insulator Platform
摘要： Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.
关键词： Ge-on-insulator,photodetector,activation energy,direct wafer bonding
更新于2025-09-11 14:15:04
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Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames
摘要： A novel surface activation technology for Cu-Cu bonding-based wafer-level vacuum packaging using hot-wire-generated atomic hydrogen treatment was developed. Vacuum sealing temperature at 300 ?C was achieved by atomic hydrogen pre-treatment for Cu native oxide reduction, while 350 ?C was needed by the conventional wet chemical oxide reduction procedure. A remote-type hot-wire tool was employed to minimize substrate overheating by thermal emission from the hot-wire. The maximum substrate temperature during the pre-treatment is lower than the temperature of Cu nano-grain re-crystallization, which enhances Cu atomic diffusion during the bonding process. Even after 24 h wafer storage in atmospheric conditions after atomic hydrogen irradiation, low-temperature vacuum sealing was achieved because surface hydrogen species grown by the atomic hydrogen treatment suppressed re-oxidation. Vacuum sealing yield, pressure in the sealed cavity and bonding shear strength by atomic hydrogen pre-treated Cu-Cu bonding are 90%, 5 kPa and 100 MPa, respectively, which are equivalent to conventional Cu-Cu bonding at higher temperature. Leak rate of the bonded device is less than 10?14 Pa m3 s?1 order, which is applicable for practical use. The developed technology can contribute to low-temperature hermetic packaging.
关键词： Cu thermos-compression bonding,atomic hydrogen,wafer-level vacuum packaging,nano-grain,wafer bonding,hot wire
更新于2025-09-10 09:29:36
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Direct wafer bonding of Ga2O3–SiC at room temperature
摘要： Integration of Ga2O3 on SiC substrate with a high thermal conductivity is one of the promising solutions to reduce the self-heating of Ga2O3 devices. Direct wafer bonding of Ga2O3–SiC at room temperature was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam. An average bonding energy of ~2.31 J/ m2 was achieved. Both the structure and the composition of the interface were investigated to understand the bonding mechanism. According to the interface analysis, a ~2.2 nm amorphous SiC layer and a ~1.8 nm amorphous β-Ga2O3 layer originating from the ion beam bombardment for surface activation were found at the interface. A slight di?usion at the interface might already happen at room temperature, which should contribute to the strong bonding. To con?rm the di?usion at a low temperature and investigate the possible interfacial variation during device operation, an annealing process was carried out at 473 K. The same analysis was applied on the annealed bonding interface. The interfacial layer shrank by ~0.5 nm after annealing. The further di?usion of Ga and Si at the interface caused by the annealing was con?rmed. Besides, the position of the Ar count peak inside the amorphous Ga2O3 layer shifted by ~0.5 nm toward SiC.
关键词： Ga2O3,Room temperature,Direct wafer bonding,SiC
更新于2025-09-10 09:29:36