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Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application
摘要： In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10?2 ? cm was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.
关键词： working pressure,Al doped ZnO-MgO powder,RF magnetron sputtering,photovoltaic applications,thin films,solid-state method,optoelectronic properties
更新于2025-09-23 15:21:01
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Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells
摘要： Magnetron sputtering has become an effective method in Sb2Se3 thin film photovoltaic. Research found that post-selenization treatments are essential to produce stoichiometric thin films with desired crystallinity and orientation for the sputtered Sb2Se3. However, the influence of the sputtering process on Sb2Se3 device performance has rarely been explored. In this work, the working pressure effect was thoroughly studied for the sputtered Sb2Se3 thin film solar cells. High-quality Sb2Se3 thin film was obtained when a bilayer structure was applied by sputtering the film at a high (1.5 Pa) and a low working pressure (1.0 Pa) subsequently. Such bilayer structure was found to be beneficial for both crystallization and preferred orientation of the Sb2Se3 thin film. Lastly, an interesting power conversion efficiency (PCE) of 5.5% was obtained for the champion device.
关键词： Sb2Se3,magnetron sputtering,substrate configuration,post-selenization,working pressure,thin film solar cell
更新于2025-09-23 15:19:57
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Effect of working pressure on the properties of RF sputtered SnS thin films and photovoltaic performance of SnS-based solar cells
摘要： Tin sulfide (SnS) thin films were deposited with a single SnS target by radio frequency magnetron sputtering while varying the working pressure (0.6 Pa to 2.6 Pa), and the structural, chemical, electricelectrical and optical properties of the SnS thin films were investigated. X-ray diffraction results showed that all the SnS thin films had a (111) plane preferred growth orientation, and X-ray photoelectron spectroscopy verified that a SnS thin film was grown with an orthorhombic crystal structure, having the binding energy of 324.5 eV. Due to a long wavelength shift in the transmittance spectrum, the optical band gap decreased from 1.56 eV to 1.47 eV. A SnS-based conventional structure solar cell (Al/ITO/i-ZnO/CdS/SnS/Mo/SLG), prepared with a SnS absorption layer and deposited at a working pressure of 2.0 Pa, achieves the highest power conversion efficiency of 0.58%. It is confirmed that this result reveal to very high efficiency compared to other reports with conventional structure.
关键词： thin films,Tin sulfide,radio frequency magnetron sputtering,single target,SnS based solar cells,working pressure
更新于2025-09-19 17:13:59