研究目的
研究铜掺杂对Sb2S3薄膜物理和电学性能的影响及其在提升Sb2S3太阳能电池性能中的应用。
研究成果
铜掺杂是提高Sb2S3薄膜载流子浓度和电学性能的有效方法，从而提升了Sb2S3太阳能电池的性能。该研究表明了铜掺杂Sb2S3薄膜在光伏应用中的潜力。
研究不足
射频溅射制备的Sb2S3太阳能电池性能仍落后于最先进的溶液法制备Sb2S3太阳能电池，表明吸收层薄膜质量或器件界面存在改进空间。
1：实验设计与方法选择：
本研究采用射频磁控溅射法制备了纯Sb2S3薄膜及掺铜Sb2S3薄膜，系统研究了掺杂对物理和电学性能的影响。
2：样品选择与数据来源：
使用Sb2S3靶材和铜箔进行制备，通过控制铜箔用量调节掺杂浓度。
3：实验设备与材料清单：
射频磁控溅射系统、Sb2S3靶材、铜箔、SnO2胶体、Spiro-OMeTAD有机空穴传输材料。
4：实验步骤与操作流程：
溅射样品在320°C氩气氛围的热板上退火10分钟。平面太阳能电池分别采用SnO2和Spiro-OMeTAD作电子传输层和空穴传输层。
5：数据分析方法：
通过紫外-可见-近红外分光光度计、XRD、SEM、TEM、XPS、UPS和霍尔效应测量系统对薄膜特性进行表征。
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X-ray photoelectron spectroscopy
ESCLAB 250Xi
Thermo Scientific
Used to examine the compositions and chemical states of Sb2S3 samples.
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ultraviolet photoelectron spectroscopy
ESCLAB 250Xi
Thermo Scientific
Used to verify the work function and band energy positions of Sb2S3 samples.
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Hall Effect measurement system
Lake Shore 7704A
Lake Shore
Used to measure the carrier density.
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Keithley 2450 Source Measure Unit
2450
Keithley
Used to obtain the current–voltage (J–V) curves of solar cells.
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UV–Vis–NIR spectrophotometer
UV-2450
SHIMADZU
Used to measure the transmittance of the films.
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X-ray diffraction
Bruker D8
Bruker
Used to characterize the crystal structure of Sb2S3 and Cu-doped Sb2S3.
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scanning electron microscopy
Hitachi SU8000
Hitachi
Used to observe the morphologies of the samples.
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transmission electron microscopy
JEOL JEM 2010
JEOL
Used to observe the morphology of the samples.
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Sb2S3 target
99.99% pure
ZhongNuo Advanced Material (Beijing) Technology Corporation
Used for the fabrication of Sb2S3 films via RF magnetron sputtering.
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copper foils
99.99% pure
ZhongNuo Advanced Material (Beijing) Technology Corporation
Used for Cu-doping into Sb2S3 films.
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SnO2 colloid
tin (IV) oxide, 15% in H2O colloidal dispersion
Alfa
Used as a precursor for the electron transport layer in solar cells.
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Spiro-OMeTAD
Xi’an Polymer Light Technology Corporation
Used as the organic hole transport material in solar cells.
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RF magnetron sputtering system
Used for the deposition of Sb2S3 and Cu-doped Sb2S3 films.
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