Low-phase noise 8.22 GHz GaN HEMT oscillator using a feedback multi-path transformer

摘要： This article designs a low-phase noise 8.22 GHz GaN high electron-mobility transistor (HEMT) oscillator in the WIN 0.25 μm GaN HEMT process. The oscillator uses a HEMT amplifier with a transformer as the feedback network. The transformer uses a 3-path secondary inductor and a single-path primary inductor. The GaN oscillator consumes the power 4.328 mW and generates a signal at 8.22 GHz with an output power ?11.35 dBm. At 1 MHz frequency offset from the carrier at 8.22 GHz the phase noise is ?120.82 dBc/Hz, the figure of merit of the proposed oscillator is ?192.76 dBc/Hz. The oscillator chip occupies an area of 2 × 1 mm2.