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Crosslinked Organosilicon-Acrylate Copolymer Moisture Barrier Thin Film Fabricated by Initiated Chemical Vapor Deposition (iCVD)
摘要: Crosslinked organosilicon-acrylate copolymer thin film with desired chemical composition was successfully fabricated by a simply modified initiated chemical vapor deposition (iCVD) process. Unlike the conventional iCVD copolymerization process, in our novel process, comonomers were injected together as one gas phase into the polymerization chamber from miscible liquid comonomer mixture. 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4) and cyclohexyl methacrylate (CHMA) were used as the comonomers and tert-butyl peroxide was used as the initiator. From Fourier transform infrared (FTIR) spectra and solvent resistance test, we clearly confirmed that the crosslinked copolymer thin film with desired chemical composition could be obtained by controlling only the mixing ratio of liquid comonomers. It is expected that crosslinkable V4D4 organosilicon moiety provides hydrophobic moisture barrier property and CHMA acrylate moiety provides mechanical flexibility and better adhesion. We observed a certain level of moisture blocking capability of the copolymer thin film, implying potential application of the crosslinked organosilicon-acrylate copolymer thin film as flexible polymer buffer layer in organic/inorganic or metal oxide hybrid moisture barrier for flexible display or electronic devices.
关键词: moisture barrier property,copolymer thin film,initiated chemical vapor deposition (iCVD),cyclohexyl methacrylate (CHMA),2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4)
更新于2025-09-23 15:21:21