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Effect of colloid aggregation characteristic on ZnO interface layer and photovoltaic performance of polymer solar cells
摘要： ZnO as a classical n-type semiconductor oxide is widely used as the electron transport layer for high-efficiency polymer solar cells by using solution processing. To study the effect of ZnO colloid aggregation size on the morphology of ZnO interface layer and photovoltaic performance of polymer solar cells. The ZnO colloid aggregation size was adjusted by aging time, and the PTB7-Th:PC71BM solar cells with various ZnO interface layers were fabricated. The results showed that morphology, structure and property of ZnO interface layer were depended on the ZnO colloid particle size, and then determined the photoelectric performance of the PTB7-Th:PC71BM solar cell. The best performance of PTB7-Th:PC71BM solar cell with 10.21% was obtained when the ZnO precursor solution was set at 2 h aging. The ZnO interface layer with good morphology and appropriate energy level improved the mobility and lifetime of charge carrier. Moreover, it also attributed good interface contact between the ZnO layer and the PTB7-Th:PC71BM active layer, which enhanced the electron transfer and reduced the charge recombination at the interface.
关键词： ZnO colloidal particle size,ZnO interface layer,Polymer solar cells,Aging time,Photovoltaic performance
更新于2025-09-23 15:19:57
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Aging Effect of a Cu(In,Ga)(S,Se) <sub/>2</sub> Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis
摘要： Cd-free Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells are fabricated by an all-dry process (a Cd-free and all-dry process CIGSSe solar cell) with aged CIGSSe thin film absorbers. The aged CIGSSe thin films are kept in a desiccator cabinet under partial pressure of oxygen of ≈200 Pa for aging time up to 10 months. It is reported for the first time that aged CIGSSe thin film with increased aging time results in significant enhancement of photovoltaic performance of Cd-free and all-dry process CIGSSe solar cells, regardless of the alkali treatment. Based on carrier recombination analysis, carrier recombination rates at the interface and in the depletion region of the Cd-free and all-dry process CIGSSe solar cells are reduced owing to avoidance of sputtering damage on CIGSSe absorber surface, which is consistent with the strong electron beam-induced current signal near CIGSSe surface after the increased aging time. It is implied that the interface and near-surface qualities are clearly improved through the increased aging time, which is attributable to the self-forming of Inx(O,S)y near CIGSSe surface, which acts as a buffer layer. Ultimately, the 22.0%-efficient Cd-free CIGSSe solar cell fabricated by all-dry process is achieved with the aged Cs-treated CIGSSe absorber with the aging time of 10 months.
关键词： all-dry process,EBIC measurements,Cd-free Cu(In,Ga)(S,Se)2 solar cells,aging time,carrier recombination rate
更新于2025-09-11 14:15:04