[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Structure and cathodoluminescent properties of ultraviolet emitting Zn(Al<inf>1-x</inf> Ga<inf>x</inf>)<inf>2</inf> O<inf>4</inf> alloy phosphor

摘要： The goal is to control the band gap by replacing the Al site of zinc aluminate having a spinel structure with Ga, and to control the emission wavelength, and aim for application as a light source in sterilization, skin treatment and the like. Zn(Al1-xGax)2O4 phosphor was prepared by a solid phase synthesis method. A plurality of samples with different Al/Ga ratio were prepared, and their crystal structures and luminescent properties were evaluated. In X-ray diffraction, formation of a single phase was confirmed in the sample fired at 1300 oC. It was confirmed that the diffraction peak shifted to the lower angle side by increasing the Ga ratio. In the cathode luminescence method, it was confirmed that ultraviolet emission of ZnAl2O4 was confirmed at about 250 nm, and it was confirmed that the emission wavelength shifted to the long wavelength side by increasing the Ga ratio. It is suggested that substituting Ga for the Al site of ZnAl2O4 is useful for shifting the emission wavelength although the emission intensity is unstable.