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Structural and Optical Properties of AlN/GaN and AlN/AlGaN/GaN thin films on Silicon Substrate prepared by Plasma Assisted Molecular Beam Epitaxy (MBE)
摘要： In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam epitaxy (MBE) on silicon substrate. Gallium (7N) and Aluminium (6N5) of high purity were used to grow GaN, AlN and AlGaN respectively. The structural and optical properties of the prepared AlN/GaN and AlN/AlGaN/GaN layer heterostructures were investigated by means of atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence spectroscopy (PL) and Raman spectroscopy. AFM measurement demonstrated that the root mean square of surface roughness for AlN/GaN and AlN/AlGaN/GaN heterostructures are 3.677 nm and 10.333 nm respectively. XRD data indicated that the samples have typical diffraction pattern of hexagonal structure. Raman spectra revealed all four Raman-active modes present inside both samples. PL spectra data showed the yellow luminescence which corresponds to the deep energy levels due to imperfections of AlN did not appear. Thus, PL observation indicated that the thin film of AlN/GaN and AlN/AlGaN/GaN layers have good optical quality and looks promising for various target applications in optoelectronics, photovoltaic and radiofrequency applications.
关键词： silicon,thin film,MBE,Aluminium Nitride,Gallium Nitride,Aluminium Gallium Nitride
更新于2025-09-23 15:23:52
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Characterisation of AlN nano thin films prepared by PLD
摘要： Aluminium nitride (AlN) nano thin films have been prepared by pulsed laser deposition (PLD) in this paper. The microstructure and grain size of the nano thin films were characterised by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results showed that the PLD conditions such as laser fluence, ambient pressure and substrate temperature influence the thickness, morphology and grain size of the nano thin films obviously, i.e. the surface of the nano thin films becomes rough while the grain size increases with increasing the laser fluence, ambient pressure and substrate temperature. In addition, there exists a preferred orientation growth in the thin films.
关键词： microstructure,pulsed laser deposition (PLD),aluminium nitride,grain size,Nano thin films
更新于2025-09-23 15:22:29
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Structural and thermodynamic properties of cubic sphalerite aluminum nitride under hydrostatic compression
摘要： The present work aims to investigate the structural phase stability and thermodynamic properties of aluminium nitride with cubic zinc-blende structure at normal and high pressures (up to 5 GPa) and high temperatures (up to 2000 K). In this study, we use the pseudopotential plane wave method within the framework of the density functional theory with the local density approximation for the exchange-correlation functional. The phase transition pressure has been determined and found to be in very good agreement with several theoretical data. The pressure and temperature dependences of thermodynamic properties are successfully presented, analyzed and discussed in details. Besides, the plasmon energy and microhardness are examined.
关键词： High-pressure,Ab-initio calculation,High-temperature,Thermodynamic properties,Aluminium nitride
更新于2025-09-23 15:19:57
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Synthesis of Nanostructured PLD AlN Films: XRD and Surface-Enhanced Raman Scattering Studies
摘要： Thin films of AlN on Si were fabricated by pulsed laser deposition in vacuum and in nitrogen ambient, and at laser repetition rate of 3 Hz or 10 Hz. The films were nanostructured according to the X-ray diffraction analysis and TEM imaging. Films deposited in vacuum were polycrystalline with hexagonal AlN phase and with columnar structure, while films deposited in nitrogen were predominantly amorphous with nanocrystallites inclusions. The Al-N phonon modes in the surface-enhanced Raman spectra were largely shifted due to stress in the films. Phonon mode of Al-O related to film surface oxidation is observed only for deposition at low pressures.
关键词： microstructure,nanostructured thin film,Transmission electron microscopy,pulsed laser deposition,Aluminium nitride,Raman spectroscopy,X-ray diffractometry
更新于2025-09-19 17:15:36
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Capabilities of GaN/AlN/GaN structures as high-intensity pyroelectric laser sensors
摘要： The use of transparent Al2O3 /GaN/AlN/GaN structures as pyrometric sensors for measuring the parameters of high-intensity laser pulses is proposed. The peculiarities of the employment of such sensors in laser fusion facilities are analysed. Post-pulse distributions of the absorbed energy density are obtained for various parameters of both GaN layers. The local maxima of these distributions are minimised by varying the ratio of donor concentration and the ratio of their thicknesses under the condition of invariance of the total absorbed energy. The optimal structure configuration is established in terms of reducing the possible negative effect of laser impact on the pyroelectric coefficient stability.
关键词： pyroelectric effect,aluminium nitride,laser thermonuclear fusion
更新于2025-09-16 10:30:52
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[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Application of MEMS Enabled Excitation and Detection Schemes to Photoacoustic Imaging
摘要： This paper shows, for the first time, a MEMS enabled photoacoustic system, using a custom MEMS Q-switched Nd:YAG laser for generation of photoacoustic (PA) waves and a custom-built MEMS thin-film aluminium nitride piezoelectric micromachined ultrasound transducers for PA wave detection.
关键词： Photoacoustic,Miniaturisation,PMUT,Aluminium Nitride,MEMS,Imaging,Q-switched Nd:YAG
更新于2025-09-11 14:15:04
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First-principles study of structural phase transformation and dynamical stability of cubic AlN semiconductors
摘要： Phase transformation and stability of cubic aluminium nitride (AlN) phases such as zinc-blende and rock-salt have been investigated using first-principles calculations based on density functional perturbation theory (DFPT) within quasi-harmonic approximation (QHA). The phonon dispersion relations of both the cubic phases have been calculated at various high-symmetry points of the Brillouin Zone. The pressure and volume dependence of phonon frequencies have been investigated. The application of pressure results in opposite trend of transverse acoustic (TA) phonon frequencies for rock-salt and zinc-blende AlN phases. The TA frequencies found to increase for the former one and decrease for the latter one with the increase in pressure. The dynamical instability results in a volume expansion of rock-salt AlN close to the equilibrium volume of zinc-blende AlN. Phase transformation of these cubic phases is further investigated by computing an equilibrium pressure-temperature phase diagram within QHA. The cubic rock-salt AlN is found to form at high pressures and temperatures than zinc-blende AlN. The temperature dependence of lattice constant and the corresponding volume thermal expansion coefficient of both the cubic phases have been investigated.
关键词： Aluminium nitride,First-principles calculations,Density functional perturbation theory,Quasi-harmonic approximation,Phase transformation,Dynamical stability
更新于2025-09-09 09:28:46