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[IEEE 2018 IEEE Innovative Smart Grid Technologies - Asia (ISGT Asia) - Singapore (2018.5.22-2018.5.25)] 2018 IEEE Innovative Smart Grid Technologies - Asia (ISGT Asia) - Solar Plant Integration to Utility Grid with Improved Power Quality by using RNN-Hebbian-LMS Current Controller
摘要： In this paper a new topology of current control technique is proposed, to transfer the improved quality of power produced from the solar plant to the utility grid. Also, a high-gain high-efficient converter driving with Kalman MPPT is used to boost the low voltage levels of the PV array. The proposed control uses recurrent neural network RNN-Hebbian -LMS based current controller to achieve the better performance in terms of power quality. The RNN network uses feedback signals to control the current flow from solar plant to the utility grid. The Hebbian - LMS (least mean square) algorithm is used to update the weights of the RNN based current controller. The main advantage of the RNN-Hebbian-LMS current control technique is to maintain the constant voltage. Besides, it also provides system stability over wide range of parameter variations and damp out the oscillations quickly. The proposed algorithm is able to overcome the stability and sensitivity problems incurred with the conventional PI current controller. The simulation results will be compared with the conventional PI and proposed RNN-Hebbiab-LMS current controllers. Finally, the proposed current controller shows the improved power quality, quick settling time and more stable comparing with the conventional controllers.
关键词： Least Mean Square (LMS),Utility Grid,Solar Plant,High-Gain converter,PV array,Maximum Power Point Tracking (MPPT),Recurrent Neural Network (RNN)
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Recent progress in development of radiation tolerant image sensor with field emitter array
摘要： A prototype image sensor is developed using cadmium telluride-based photodiode and a volcano-structured FEA. Radiation tolerance of each component was tested by irradiating gamma-ray using cobalt-60 source. Gamma-ray tolerance of up to 1.2 MGy was confirmed for both FEA and photodiode.
关键词： Radiation tolerant,Image sensor,Cadmium telluride (CdTe),Field emitter array (FEA)
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Operation of field emitter arrays under high dose rate gamma-ray irradiation
摘要： Robustness of field emitter arrays (FEA) against high dose rate gamma-ray irradiation was confirmed. The current-voltage characteristics of the FEA were investigated in a vacuum vessel developed for in situ measurements under the irradiation. Although slight increase of the gate current was observed under the irradiation, the insulating layer kept the electrical insulation. As a result, FEA showed the almost identical current-voltage characteristics under the 1.3 kGy h-1 gamma-ray irradiation.
关键词： gamma-ray,image sensor,field emitter array,radiation tolerance
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field emission current investigation of p-type and metallized silicon emitters in the frequency domain
摘要： We investigated two different field emitter arrays consisting of 10×10 p-type and 10×10 undoped Au-coated high aspect ratio silicon tips. The I-V characterization of the p-type sample showed a pronounced saturation for voltages higher than 500 V and a maximum emission current of 39 nA. The metallized sample revealed a FN-like emission up to several μA. The metallized and the p-type sample operating below the saturation region showed high current fluctuations of ±16%. Whereas, the metallized sample with current regulation and the p-type sample in the saturation yielded a current stability of ±0.4% and ±0.3%, respectively. Investigations in the frequency domain revealed the for field emission typical 1/f-noise. By operating in the saturation region (p-type sample) or using an emission current regulation (metallized sample) the noise level was reduced by at least 20 dB. Finally, the p-type sample was illuminated by a light emitting diode to increase and modulate the emission current in the saturation region. The emission current was increased by a factor of 3.7 to 145 nA. With this configuration we emulated an unstable emission behavior and evaluated the performance of our emission current regulation circuit.
关键词： field emitter array,current stability,current fluctuation,field emission noise,field emission,silicon tip
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field emission assisted micro plasma discharges at vacuum and atmospheric pressures
摘要： Spatially confined non-equilibrium plasmas at vacuum and atmospheric pressure in the dimensions from a few microns to one millimeter are a promising approach to the generation and maintenance of stable glow discharges. The realization of these micro-discharges or micro-plasmas enable more accurate investigations in the field of micro plasma research. We report on field emission assisted micro plasmas excited by an alternating current with frequencies up to 1 kHz. Due to the field enhancement caused by an array of Si nano-tip structures the ignition voltage of stable plasma discharges can be reduced by 30%.
关键词： low-temperature plasma,field emission array,dielectric barrier discharge,plasma discharge
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Gamma-Ray Irradiation Effects of CdS/CdTe Photodiode for Radiation Tolerant FEA Image Sensor
摘要： The influences of gamma irradiation on CdS/CdTe photodiodes were investigated in order to evaluate their potential for applications to the radiation tolerant field emitter array (FEA) image sensor. It was found that the CdS/CdTe photodiodes have sufficient tolerance to high gamma-ray exposure more than 2 MGy. Furthermore, I-V characteristics of CdS/CdTe photodiodes under gamma-ray irradiation were investigated. In the CdTe thickness of 6.5 ?m, the change rate of current density increased with increase in the reverse bias voltage. On the other hand, in the case of 2.2 ?m, the change rate of current density was almost constant irrespective of the reverse bias voltage. These results suggest that the increase in depletion layer width affects the change rate of current density.
关键词： image sensor,cadmium telluride,field emitter array,radiation tolerance
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup
摘要： The influence of residual gas pressure on the characteristics of black-Silicon field emitter arrays in a high voltage triode setup is investigated. I-V-characteristics at different pressure levels show a decrease of emission current with rising pressure. This can be explained by an increase of the work function and charging of the emitter surface due to adsorbates. The initial characteristics can be restored by heating the FEA up to 110 °C during electron emission. This regeneration procedure enables an extension of the lifetime from about 20 h to 440 h at a residual gas pressure of 10-5 mbar.
关键词： silicon tips,emission current stability,semiconductor field emission,field emitter array
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Cold Cathode Based Microwave Devices for Current and Future Systems
摘要： We report ongoing efforts to achieve reliable field emitter (FE) cathode operation for high current electron beam generation in RF microwave devices. These efforts include testing of cold cathode traveling wave tubes, high average power cathode-only testing, and evaluating cathode emission variation over long operating periods in a microwave device vacuum environment. Finally, looking toward future needs, emittance reduction is being addressed to allow cold cathode operation in the mm-wave frequency regime.
关键词： field emitter array,TWT,traveling wave tube,microwave amplifier,cold cathode,vacuum electronics
更新于2025-09-23 15:21:21
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[IEEE 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) - Odessa, Ukraine (2018.9.4-2018.9.7)] 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) - Combined Wide-Angle Scanning by a Two-Dimensional Dipole Array
摘要： An analytical solution of an impedance synthesis problem for a two-dimensional dipole antenna array is obtained. The array consists of thin impedance electric dipoles whose centers are located at nodes of a planar rectangular grid with double periodicity. Radiation patterns of each dipole in the array does not differ from that of an isolated dipole. A new method for wide-angle scanning of the array radiation pattern, combining the simultaneous variation of phases of the excitation currents in the dipoles and of their surface impedances is proposed.
关键词： thin impedance dipole,flat two-dimensional antenna array,wide-angle scanning,radiation pattern,wave zone,impedance synthesis method
更新于2025-09-23 15:21:21
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Study on non-isothermal hot-embossing of polymer micro-prism array with efficiency and accuracy
摘要： The isothermal hot-embossing leads to inefficiency because of heating and cooling whole polymer workpiece for precision micro-forming. Hence, a non-isothermal hot-embossing is proposed by compressing and melting a micron-scale surface layer into heated core microgrooves without changing the solid-state workpiece. The objective is to understand how the upper layer micro-prism array is formed on large-size polymer surface with regard to core microgroove parameters and hot-embossing variables. First, the micro-prism shape and sizes were in-process modeled through a hybrid of mechanical compression and hot-melt flowing inside core microgrooves; then the micro-grinding with the trued wheel micro-tip was employed to fabricate various microgrooves on macro-size die cores; finally, the micro-forming accuracy and efficiency were experimentally investigated in hot-embossing. It is shown that the integrated micro-prism array with nanometer-scale surface roughness is rapidly generated inside accurate and smooth core microgrooves with 1-3 seconds. The micro-forming accuracy is dominated by the hot-embossing variables under the limitations of core microgroove parameters. Moreover, the hot-embossed surface roughness reaches 10-30 nm through the hot-melt layer flowing even if the core surface roughness is larger. It is confirmed that the rapid micro-forming sizes and surface roughness may be predicted by the micro-nano core topographies and the hot-embossing variables.
关键词： micro-forming,die core,micro-grinding,hot-embossing,LGP,micro-prism array
更新于2025-09-23 15:21:21