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Resistive switching behavior and mechanism in flexible TiO2@Cf memristor crossbars
摘要： Fiber-based memristors are expected to be one of the most ideal candidates to the future wearable nonvolatile devices. In this work, Carbon fibers coated with rutile TiO2 nanorods (TiO2 NRs) were prepared via hydrothermal method, which were denoted as TiO2@Cf. Flexible TiO2@Cf memristor crossbar was facilely assembled on a polyimide (PI) film. This device exhibited bi-directional threshold switching behavior and a maximum ON/OFF ratio of 105. In addition, the conductance of the memristors can be continuously adjusted by consecutive sweep cycles of bias voltages. The devices also exhibit excellent endurance over 1500 cycles with a negligible shift. The carriers transport and resistance switching of the TiO2@Cf memristor crossbar were explained by the Fowler-Nordheim tunneling model. The oxygen vacancies (OV) in TiO2 drifted to the interface of TiO2/Cf by an applied electric field, thereby reducing the depletion region and enhancing the current. This work provides a profound understanding of the resistive switching behavior and the related mechanism in flexible TiO2@Cf memristor crossbars, and paves a new way for potential applications for memristors in artificial synapses and flexible devices.
关键词： Artificial synapses,Oxygen vacancies,Memristor crossbars,Flexible devices,Carbon fibers
更新于2025-11-14 17:03:37
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A Robust Artificial Synapse Based on Organic Ferroelectric Polymer
摘要： Memristors with history-dependent resistance are considered as artificial synapses and have potential in mimicking the massive parallelism and low-power operation existing in the human brain. However, the state-of-the-art memristors still suffer from excessive write noise, abrupt resistance variation, inherent stochasticity, poor endurance behavior, and costly energy consumption, which impedes massive neural architecture. A robust and low-energy consumption organic three-terminal memristor based on ferroelectric polymer gate insulator is demonstrated here. The conductance of this memristor can be precisely manipulated to vary between more than 1000 intermediate states with the highest OFF/ON ratio of ≈104. The quasicontinuous resistive switching in the MoS2 channel results from the ferroelectric domain dynamics as confirmed unambiguously by the in situ real-time correlation between dynamic resistive switching and polarization change. Typical synaptic plasticity such as long-term potentiation and depression (LTP/D) and spike-timing dependent plasticity (STDP) are successfully simulated. In addition, the device is expected to experience 1 × 109 synaptic spikes with an ultralow energy consumption for each synaptic operation (less than 1 fJ, compatible with a bio-synaptic event), which highlights its immense potential for the massive neural architecture in bioinspired networks.
关键词： artificial synapses,organic,PVDF,ferroelectric,memristors
更新于2025-09-23 15:21:21