Effect of doping Gd2O3 on dielectric and piezoelectric properties of BaZr0.1Ti0.9O3 ceramics by sol–gel method

摘要： The effects of sintering temperature and doping amount of gadolinium ions on the microstructures and electrical properties of sol gel derived Ba (Zr0.1Ti0.9) O3 + xGd ceramics were investigated in this manuscript. XRD analysis showed that the main crystalline phase of BZT-xGd ceramic samples exhibit a perovskite structure without significantly change. The sample sintered at 1350 °C and doped with gadolinium ions of 0.5 mol% has uniform grain size and compact morphology. And the sample(1350 °C—0.5 mol%) also has a high piezoelectric charge coefficient of 131.33 pC/N, large plane electromechanical coupling coefficient of 0.22, high dielectric constant of 10504, and small dielectric loss of 0.01. The correlation of dielectric and piezoelectric properties of BZT-xGd ceramics with doping amount of Gd3+ ion has been explained by the lattice theory.