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Investigation of electrical values of low-efficiency dye-sensitized solar cells (DSSCs)
摘要： Indium-tin-oxide (ITO)/density (d)- titanium dioxide (TiO2)/nonporous (nonp)-TiO2 is a TiO2-based bilayer photoanode. These photoanodes coated for dye-sensitized solar cells (DSSCs) were with nonp-TiO2 surface and had very thick ITO layer. DSSCs were fabricated with these photoanodes. After their current density-voltage (J-V) were analyzed, ?t was seen that they were low efficiency and the shape of their J-V curve was linear line instead of rectangle. In this study, it was examined the relationship between the dark current (IDC), the series resistance (Rs) and the shunt resistance (Rsh) were examined for evaluating the fill factor (FF) of low-efficiency DSSCs because of the photoanodes with nonp-TiO2 surfaces and very thick ITO for contact layer. It was seen in the J-V graph of DSSCs which had low FF value due to their IDC and low Rsh. The J-V graph of low-efficiency DSSCs is linear due to their low Rsh and high Rs values. Moreover, the too thick ITO layer decreases the resistance of photoanodes; however, electrons in these photoanodes can not efficiently transferred to external circuit from ITO contact layer of DSSCs.
关键词： Fill factor,Linear,Nonporous,Back electron,Low-efficiency,Dark current,Cell resistance
更新于2025-09-19 17:13:59
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Hole-induced polymerized interfacial film of polythiophene as co-sensitizer and back-electron injection barrier layer in dye-sensitized TiO2 nanotube array
摘要： In this work, we demonstrate that an ultra-thin film of polythiophene deposited interfacially via hole-induced polymerization on the surface of dye-sensitized TiO2 nanotube array acts as co-sensitizer, and hinders back-electron transfer in a DSSC. Consequently, the dark current, and the recombination reactions can be suppressed, leading to an improved number of electron density at the TiO2 array electrode. Thus, an enhanced photocurrent, and power conversion efficiency of the device is achieved. This logical concept is experimentally justified, and the device, after polythiophene interfacial treatment, demonstrates an enhanced power conversion efficiency by the factor of 39.19%.
关键词： Interfacial treatment,Back-electron injection barrier,Hole-induced polymerization,TiO2 nanotubes,Polythiophene co-sensitizer,DSSC
更新于2025-09-04 15:30:14