Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering

摘要： A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films with (002) preferred orientation. Pt/ZnO/Pt and Pt/Cr doped ZnO/Pt Schottky diodes were fabricated for photodetection studies. The Schottky barrier height was lowered for Cr doped ZnO film as compared to ZnO film. The ideality factor was improved upon Cr doping. Pt/ZnO/Pt diode was unresponsive to visible light, however, Pt/Cr doped ZnO/Pt diode showed response to visible light with short response and recovery times. The response of the Pt/Cr doped ZnO/Pt diodes to visible light is attributed to the reduction in band gap of the Cr doped ZnO thin film.