Influence of rare earth material (Sm3+) doping on the properties of electrodeposited Cu2O films for optoelectronics

摘要： Herein, we report samarium (Sm) dopant concentration effect on Cu2O films characteristics prepared by electrodeposition method. XRD patterns of the films indicated that pristine and Sm:Cu2O films have polycrystalline cubic structure with (111) preferred orientation. It was seen from the SEM photographs pinhole free dense triangle shaped grains for undoped Cu2O thin films and the grain size was decreased as concentration of samarium was increased. Raman spectroscopy showed peaks at 108, 146, 217, 413 and 637 cm?1 which conformed the Cu2O phase formation and intensity of the peaks was decreased with a increase in dopant concentration. UV–Vis spectra exhibited that the absorption value of Cu2O films is increased gradually with reduction in band gap value for the increase of samarium content. Photoluminescence (PL) spectra revealed that all films display a visible light emissions and its intensity was reduced due to increase in doping concentration. Photosensitivity observation study indicated that the photocurrent of deposited Cu2O films was increased along with the increase in dopant material concentration.