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Multivariable study on growth of diamond on diamond substrates by microwave? plasma chemical vapour deposition
摘要： Substrate temperature and methane concentration in Hydrogen (H2) gas mixture is the main source for increasing the growth rate, nucleation and grain size of a synthetic diamond. The downside of such an approach is reduced quality. By increasing the chamber pressure, although the quality can be improved, however, it leads to a decrease in the crystal growth rate. Thin diamond films were deposited under hydrogen (H2) and methane (CH4) gas mixture using microwave plasma chemical vapor deposition (MPCVD) technique. The effect of methane concentration (1-5%), growth temperature, and pressure on the nucleation of diamond thin films on diamond substrates was investigated. The growth temperature and pressure were maintained in the range of 925-950 ℃ and 72-75 Torr, respectively. Single crystal diamond (SCD) thin films have been prepared on diamond substrates, which play an important role in the application of the diamond detectors. Different dimensions of films were obtained on diamond substrates with different thicknesses such as 209.17 μm, 401.73 μm, and 995.03μm for the sample with 1%, 2% and 5% of methane concentration respectively. The roughness, as well as growth rate of these films, were also investigated and were found to be 5.02 μ/h and 4.23 nm, respectively for 5% methane by optimizing the substrate temperature at 950 ℃. Different characterization techniques were used to study the structural, morphological, and compositional properties of the deposited diamond films which confirmed the crystallographic order of the developed diamond film on the diamond substrates.
关键词： MPCVD,XRD,Diamond thin films,XPS,Raman spectroscopy,AFM,SEM
更新于2025-09-23 15:23:52
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STRUCTURING OF DIAMOND FILMS USING MICROSPHERE LITHOGRAPHY
摘要： In this study, the structuring of micro- and nanocrystalline diamond thin films is demonstrated. The diamond films are structured using the technique of microsphere lithography followed by reactive ion etching. Specifically, this paper presents a four-step fabrication process: diamond deposition (microwave plasma assisted chemical vapor deposition), mask preparation (by the standard Langmuir-Blodgett method), mask modification and diamond etching. A self-assembled monolayer of monodisperse polystyrene (PS) microspheres with close-packed ordering is used as the primary template. Then the PS microspheres and the diamond films are processed in capacitively coupled radiofrequency plasma using various plasma chemistries. This fabrication method illustrates the preparation of large arrays of periodic and homogeneous hillock-like structures. The surface morphology of the processed diamond films is characterized by scanning electron microscopy and with the use of an atomic force microscope. The potential applications of these diamond structures in various fields of nanotechnology are also briefly discussed.
关键词： polystyrene microspheres,nanostructuring,scanning electron microscopy,reactive ion etching,diamond thin films
更新于2025-09-09 09:28:46