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Fabrication and characterization of pure and modified Co3O4 nanocatalyst and their application for photocatalytic degradation of eosine blue dye: a comparative study
摘要： The present work deals with the synthesis of cobalt oxide, and Fe2+- and Ni2+-doped cobalt oxide nanoparticles as a catalyst. The study is investigating the different factors in obtaining cobalt oxide, and Fe2+- and Ni2+-doped cobalt oxide nanoparticles. Photocatalytic degradation studies are carried out for water-soluble eosine blue (EB) dye using cobalt oxide, and Fe2+- and Ni2+-doped cobalt oxide nanoparticles in aqueous solution. Different parameters such as initial dye concentration, dose of catalyst, contact time and pH have been studied to optimize reaction conditions. It is observed that photocatalytic degradation is a more effective and faster mode of removing EB dye by cobalt oxide, and Fe2+- and Ni2+-doped cobalt oxide nanoparticles than work done before. The optimum conditions for the removal of the EB dye are initial concentration 40 mg/L, photocatalyst dose 0.8 g/L, and pH 7.5. The EDS technique gives the elemental composition of synthesised cobalt oxide, and Fe2+- and Ni2+-doped cobalt oxide nanoparticles. The TEM and XRD studies are carried for morphological feature characteristics of synthesized cobalt oxide, and Fe2+- and Ni2+-doped cobalt oxide nanoparticles. Pseudo-first-order kinetic has been investigated for both pure and doped cobalt oxide catalysts. Almost 95% dye degradation has been observed for doped cobalt oxide nanoparticles.
关键词： Photocatalytic degradation,Modified cobalt oxide nanoparticles,Eosine blue,EDS,SEM,XRD,TEM
更新于2025-09-04 15:30:14
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The role of oxygen doping on elemental intermixing at the PVD-CdS/Cu (InGa)Se <sub/>2</sub> heterojunction
摘要： Elemental intermixing at the CdS/CuIn1?xGaxSe2 (CIGS) heterojunction in thin‐film photovoltaic devices plays a crucial role in carrier separation and thus device efficiency. Using scanning transmission electron microcopy in combination with energy dispersive X‐ray mapping, we find that by controlling the oxygen in the sputtering gas during physical vapor deposition (PVD) of the CdS, we can tailor the degree of elemental intermixing. More oxygen suppresses Cu migration from the CIGS into the CdS, while facilitating Zn doping in the CdS from the ZnO transparent contact. Very high oxygen levels induce nanocrystallinity in the CdS, while moderate or no oxygen content can promote complete CdS epitaxy on the CIGS grains. Regions of cubic Cu2S phase were observed in the Cu‐rich CdCuS when no oxygen is included in the CdS deposition process. In the process‐of‐record sample (moderate O2) that exhibits the highest solar conversion efficiency, we observe a ~26‐nm‐thick Cu‐deficient CIGS surface counter‐doped with the highest Cd concentration among all of the samples. Cd movement into the CIGS was found to be less than 10 nm deep for samples with either high or zero O2. The results are consistent with the expectation that Cd doping of the CIGS surface and lack of Zn diffusion into the buffer both enhance device performance.
关键词： scanning transmission electron microscopy,Cu diffusion,Cu (In,Ga)Se2 photovoltaics,CdS structure,STEM‐EDS mapping
更新于2025-09-04 15:30:14