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Surface area, optical and electrical studies on PbS nanosheets (PbSNSs) for visible light photo-detector application
摘要： Herein, we report the morphological, surface area and detailed electrical properties of PbS nanosheets (PbSNSs). Scanning electron microscope elemental mapping confirms the formation of PbS and homogeneous distribution of Pb and S in final product. Morphology was confirmed as NSs by Transmission electron microscopy. Specific surface area was found to be ~ 7 m2/g through Brunauer–Emmett–Teller analysis. Diffused reflectance spectrum was measured and optical energy gap was estimated ~ 1.284 eV. Such value of energy gap makes it suitable for solar cell and other optoelectronic applications. An increase in photosensitivity with increasing the light intensity was observed due to increase in generation rate of photo-carriers. The recombination value is calculated ~ 0.59, it indicates that the defect states continuously distributed in energy gap. Differential lifetime increases with time and also life time of current carrier is enhanced with light intensity.
关键词： Electron microscopy,Electronic materials,Semiconductor,Electrical properties
更新于2025-09-09 09:28:46
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Influence of low energy (keV) negative Li ion implantation on properties of electrochemically induced scaffold-based growth of PbSe nanowires
摘要： In the present work, PbSe nanowires were synthesized using restrictive template-based electrodeposition technique and implanted under vacuum with 200 keV negative Li ion at different fluences. The morphology of the nanowires was characterized by field emission scanning electron microscopy (FESEM). X-ray diffraction patterns confirmed the same crystal structure for pristine and ion implanted samples besides change in intensity of diffraction peaks were observed. Crystallite size was evaluated using modified Scherrer method and Williamson–Hall methods (UDM and USDM). Stress, strain, stacking fault, dislocation density and lattice parameters were evaluated for the pristine and ion implanted samples. UV–Vis spectroscopy results showed decrease in optical bandgap with increasing ion fluence. Photoluminescence spectra manifested decrease in emission peak with increasing ion fluence. The I–V graphs of the nanowires depicted space charge limiting current (SCLC) characteristics at higher voltage. An increase in current was observed with increase in ion fluence due to increase in free charge carriers.
关键词： PbSe nanowires,Negative Li ion implantation,Electrical properties,Structural properties,Optical properties,Electrodeposition
更新于2025-09-04 15:30:14
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Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
摘要： The electrical and structural properties of thin hafnia films grown by the atomic layer deposition technique were investigated before and after different annealing steps as well as after a dc H plasma treatment. By using the nuclear reaction analysis, the authors demonstrated that high concentrations of hydrogen (about 1–2 at. %) could be observed even in as-grown hafnia layers. An additional hydrogenation of the samples with atomic H led to a significant shift of the flatband voltage. This shift could be explained by the introduction of positively charged H-related defects which were found to be stable at room temperature. By comparing the experimental findings with the theory and the data from muon spin spectroscopy, they tentatively ascribed these defects to interstitial H in HfO2.
关键词： atomic layer deposition,structural properties,hydrogen,electrical properties,hafnium dioxide
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur (2018.8.15-2018.8.17)] 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Effect of ZnO Composition on the Electrical Properties of MEH-PPV: ZnO Nanocomposites Thin film via Spin Coating
摘要： Organic semiconductor have been commercialized for optoelectronic device application particularly in organic light emitting diodes (OLEDs). Poly [2-methoxy-5(2’ – ethylhexyloxy)-1, 4- phenylenevinylene), MEH-PPV used in optoelectronic devices because it is easily synthesized and deposited in high molecular weight and good purity. The MEH-PPV: ZnO nanocomposites was prepared by spin coating method at room temperature. The MEH-PPV: ZnO nanocomposites thin film was investigated at different ZnO compositions. The electrical properties showed the ZnO composition at 0.2 wt% exhibits the highest conductivity of nanocomposites thin film (7.40 x 10-1 S. cm-1) and suitable applied in optoelectronic devices.
关键词： MEH-PPV: ZnO nanocomposites thin film,electrical properties,spin coating,ZnO composition
更新于2025-09-04 15:30:14
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Space-confined physical vapour deposition of high quality ZnTe nanosheets for optoelectronic application
摘要： Low-dimensional semiconductor nanomaterials with novel properties hold great promise for potential electronics and photonics applications. Here we report the growth of high quality ultra-thin ZnTe nanosheets by a space-confined physical vapour deposition route. The as-prepared ZnTe nanosheets are well crystallized and exhibit the zinc-blende crystal structure, with lateral dimension up to tens of micrometers and thickness thin to tens of nanometers. P-type conductivity was confirmed by field-effect transistors based on the individual nanosheet. Photodetectors constructed by the high-quality ZnTe nanosheets exhibit high photoresponsivity (453.9 A W?1), excellent stability and reliability. These results reveal that such high-quality ZnTe nanosheets are excellent candidates for optoelectronic applications.
关键词： Space-confined growth,Photodetectors,Electrical properties,Physical vapour deposition,ZnTe nanosheets
更新于2025-09-04 15:30:14
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Camphor Sulfonic Acid Doped Poly(3-hexylthiophene) Nanofilms: Optical and Electrical Properties
摘要： Herein, we report the fabrication and characterization of Camphor Sulfonic Acid (CSA) doped Poly(3-hexylthiophene) (P3HT) nano?lms prepared at different substrate temperature on glass by simple wire bar coating method. Spectroscopic, optic, structural and electrical properties of the prepared nano?lms were characterized by atomic force microscopy (AFM), UV-Visible spectroscopy, ?uorescence spectroscopy, X-ray diffraction, NKD spectroscopy, SEM and DC electrical measurements. The detailed electrical characterizations revealed that the conductivity of the P3HT nano?lms increased when the ?lms are doped with CSA and the conductivity increased from 5.89 × 10?5 S/cm to 1.39 × 10?4 S/cm for 40 °C preparation temperature. Thus, it was con?rmed that the substrate temperature plays an important role on the ?lm structure and spectroscopic properties. Additionally CSA-doping changes the optical properties, especially when the ?lms prepared at 40 °C.
关键词： P3HT,Nano?lms,Camphor Sulfonic Acid,Optical and Electrical Properties
更新于2025-09-04 15:30:14
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First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility
摘要： Advanced semiconductor superlattices play important roles in critical future high-tech applications such as aerospace, high-energy physics, gravitational wave detection, astronomy, and nuclear related areas. Under such extreme conditions like high irradiative environments, these semiconductor superlattices tend to generate various defects that ultimately may result in the failure of the devices. However, in the superlattice like GaAs/AlAs, the phase stability and impact on the device performance of point defects are still not clear up to date. The present calculations show that in GaAs/AlAs superlattice, the antisite defects are energetically more favorable than vacancy and interstitial defects. The AsX (X = Al or Ga) and XAs defects always induce metallicity of GaAs/AlAs superlattice, and GaAl and AlGa antisite defects have slight effects on the electronic structure. For GaAs/AlAs superlattice with the interstitial or vacancy defects, significant reduction of band gap or induced metallicity is found. Further calculations show that the interstitial and vacancy defects reduce the electron mobility significantly, while the antisite defects have relatively smaller influences. The results advance the understanding of the radiation damage effects of the GaAs/AlAs superlattice, which thus provide guidance for designing highly stable and durable semiconductor superlattice based electronic and optoelectronics for extreme environment applications.
关键词： Point defect,Electrical properties,GaAs/AlAs superlattice,Hybrid density functional theory
更新于2025-09-04 15:30:14
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Point defect chemistry of donor-doped bismuth titanate ceramic
摘要： This communication reports on the defect chemistry at room temperature of barium (Ba) doped bismuth titanate (Bi4Ti3O12), emphasizing the influence of the point defects on its electrical properties. Pure and Ba doped Bi4Ti3O12 were prepared by a conventional solid-phase reaction technique. The addition of Ba into the crystal structure of Bi4Ti3O12 was monitored by X-ray diffraction measurements combined with Rietveld refinement studies where it was determined that Ba occupies the bismuth (Bi) lattice sites as well as the presence of oxygen vacancies (V??O). The characterization of the point defects was carried out using impedance and electron spin resonance spectroscopies where the results support the models of compensation mechanisms dominated by electrical positive charges (h?) and oxygen vacancies (V??O).
关键词： defect chemistry,X-ray diffraction,Rietveld refinement,impedance spectroscopy,solid-phase reaction,barium doped bismuth titanate,electron spin resonance spectroscopy,electrical properties,oxygen vacancies
更新于2025-09-04 15:30:14