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Integral Method Analysis of Electroabsorption Spectra and Electrophotoluminescence Study of (C <sub/>4</sub> H <sub/>9</sub> NH <sub/>3</sub> ) <sub/>2</sub> Pbl <sub/>4</sub> Organic–Inorganic Quantum Well
摘要： Electric-field-induced changes in absorption and photoluminescence (PL) spectra and in PL decay profile have been measured for two-dimensional hybrid organic?inorganic halide perovskite semiconductor, ((C4H9NH3)2Pbl4) (N1). Electro-absorption (E-A) spectra observed at room temperature and at a low temperature of 45 K were analyzed by assuming the Stark shift, and the magnitudes of the change in electric dipole moment and polarizability following photoexcitation were determined. The strong signal observed in the E-A spectra at 45 K was interpreted in terms of the weak absorption band which shows extremely large Stark shift resulting from the large change in polarizability following photoexcitation. Electrophotoluminescence spectra of this compound, that is, field-induced change in PL spectra, show that PL of N1 is quenched by the application of electric field. Field effects on PL decay profiles show that the quenching results both from the field-induced decrease of the population of the emitting state following photoexcitation and from the field-induced lifetime shortening caused by the enhancement of the nonradiative decay rate at the emitting state. At a low temperature of 45 K, two exciton emissions, each of which originates from different phase, appear, and both emissions are quenched by the applied electric field with different efficiencies from each other. It is also found that trap emissions observed at low temperature in the wavelength region longer than the sharp exciton bands show more efficient field-induced quenching than that of the exciton emissions, suggesting that energy transfer from the photoexcited state to trapped states is decelerated by the applied electric field.
关键词： Electrophotoluminescence,Electroabsorption,Perovskite,Stark Shift,Quantum Well
更新于2025-09-23 15:21:21
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Low-Voltage, Coupled Multiple Quantum Well Electroreflective Modulators towards Ultralow Power Inter-Chip Optical Interconnects
摘要： An electroreflective modulator based on multiple-pass electroabsorption (EA) of coupled multiple quantum wells (CMQWs) is demonstrated for integration with low-loss polymer optical waveguides towards inter-chip and on-board optical interconnects at 850 nm. Taking advantage of coupling between quantum states in MQWs, the top polymer cladding and the bottom Au mirror form a Fabry-Pérot cavity to further enhance the EA of CMQWs, thereby greatly improving the extinction ratio (ER) at a low voltage. The device achieves an ER of ~6 dB and an insertion loss (IL) <3 dB at 2 V, notably outperforming conventional surface-incident EA modulators at the same driving voltage. A further optimized modulator design can achieve a peak ER of 9-12 dB at 2V with a low IL of 2-3 dB and a relatively broad spectral bandwidth of ~10 nm. The low capacitance and reverse bias operation at a low voltage potentially offer ~10× lower power consumption compared to direct modulation of 850 nm lasers. This simple surface-incident CMQW modulator is a promising candidate for integration with ultralow power inter-chip and on-board interconnect architectures.
关键词： Modulator,Coupled Multiple Quantum Wells,Optical Interconnect,Fabry-Perot cavity,Electroabsorption
更新于2025-09-23 15:21:01
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Low-Loss Buried-Heterostructure Optical Waveguide Based on Impurity-Free-Vacancy-Diffusion Quantum Well Intermixing
摘要： A new method for fabricating a high-quality buried-heterostructure optical waveguide using quantum well intermixing (QWI) has been demonstrated. By patterning a SiO2 thin ?lm on top of a multiple quantum well (MQW) heterostructure, rapid thermal annealing (RTA) could induce laterally local QWI, resulting in a bandgap blueshift and a simultaneous decrease in the refractive index. Both lateral bandgap and index engineering could be attained along the MQW plane, which could be used for a buried-heterostructure optical waveguide. Two SiO2 strips with 3, 5 and 7 μm windows were fabricated for waveguide on a 1540 nm InGaAsP MQW sample. A 120 nm blueshift under the SiO2 area was observed, leading to the index contrast of 0.07. Far-?eld optical diffraction measurements were also performed to yield angles of 13.9°, 12.8° and 10.6°. A narrower window resulted in a narrower optical waveguide width and exhibited a larger diffraction angle, suggesting that QWI de?ned the buried optical waveguide. In addition, an electroabsorption modulator was also made by buried waveguide. A ?10 dB low optical insertion loss and a 15 dB high extinction ratio in a 500 μm long waveguide were obtained, indicating that a buried heterostructure could be used for photonic devices and integration applications.
关键词： Quantum well intermixing,buried waveguide,electroabsorption modulator (EAM).,low loss waveguide
更新于2025-09-19 17:13:59
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10 Gb/s NRZ and 20 Gb/s PAM4 transmission using an EAM-integrated widely tunable DBR laser
摘要： We report data transmissions using a widely tunable InP-based distributed Bragg reflector (DBR) laser integrated monolithically with an electroabsorption modulator (EAM). The laser has a wavelength tuning range of over 12 nm that is obtained by current injection into the DBR section because the butt-jointed InGaAsP DBR material bandgap wavelength. Data transmissions of 10 Gb/s nonreturn to zero (NRZ) at distances of up to 75 km of a single mode fiber have been demonstrated. A power penalty of less than 0.9 dB has been obtained when compared to the BtB condition. In addition, four-level pulse amplitude transmissions of 20 Gb/s modulation (PAM4) data at distances of up to 45 km have been conducted successfully. These results indicate that the EAM-modulated DBR laser is promising for long-reach low-cost WDM optical network applications.
关键词： Distributed Bragg reflector,electroabsorption modulator,data transmission,widely tunable DBR laser,butt-joint
更新于2025-09-11 14:15:04