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Unique electromagnetic loss properties of Co-doped ZnO Nanofiber
摘要： In this paper, Co-doped ZnO nanoparticle and nano?ber are prepared by electrospinning method. The results show that Co-doped ZnO nano?ber performs bead-like ?brous shape and exhibits ferromagnetic properties. The dielectric loss and magnetic loss properties of Co-doped ZnO nano?ber are much better than those of Co-doped ZnO nanoparticle due to the improvement of dipole polarization, interfacial polarization and shape anisotropy. The absorptivity of Co-doped ZnO nano?ber can reach 70% in the frequency range of 5.3–18 GHz when the coating thickness is 1.5–4.0 mm. It is demonstrated that the bead-like ?brous shape is bene?cial to optimize electromagnetic loss and microwave absorption properties of Co-doped ZnO.
关键词： Electronic materials,Electromagnetic loss,Magnetic materials,Zinc oxide
更新于2025-09-23 15:23:52
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The Longest Acene Diimide To Date
摘要： Acenes are promising high-conductive materials that possess small band gaps that can quickly decrease with longer conjugated π-systems. However, large acenes are susceptible to poor solubility and high reactivity with the extension of the π-system. Introduction of electron-withdrawing imide groups to the acenes have gained attention because they can induce good solubility and high stability. Here, Li, Wang and co-workers report the synthesis of unprecedented hexacene diimides and show their ambipolar transport behavior.
关键词： zirconocenes,acenes,electronic materials,imides
更新于2025-09-23 15:21:21
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Near-ultraviolet Raman and micro-Raman analysis of electronic materials
摘要： Raman and micro-Raman analysis methods have been extensively investigated for the study of materials used in electronic and photonic devices. Raman studies are used to understand fundamental phonon properties, along with effects related to the crystal structure, disorder, doping, and external factors such as temperature and stress. Micro-Raman extends these investigations to the micron scale. This article reviews diverse benefits of Raman measurements when carried out using laser excitation in the near-ultraviolet wavelength range, nominally 400 to 325 nm. Micro-Raman methods in the near ultraviolet exploit the key advantage of reduced focal spot size, achievable at shorter wavelengths when using diffraction-limited optics, for mapping with high spatial resolution. There are distinct advantages common to Raman and micro-Raman spectroscopy in the near ultraviolet when compared to the widely used visible excitation. One advantage exploits the shallower optical penetration depth in select materials for probing near-surface regions or interfaces. A second advantage is related to tuning of the excitation photon energy relative to the electronic levels of a material for investigating resonance effects. Finally, the application of Raman scattering to materials which exhibit strong fluorescence requires tuning to a wavelength range away from the potentially obscuring emission. This article overviews several examples of these key advantages to study diverse applied physics problems in electronic and photonic materials. Topics covered include stress mapping in silicon and related materials, stress and thermal effects in gallium nitride and other group-III-nitride semiconductors, and carbon materials ranging from graphite and graphene to diamond grown using chemical vapor deposition. The fundamental effects of stress- and temperature-induced shifts in phonon energies and their application to study epitaxy and device-related effects are also briefly reviewed.
关键词： near-ultraviolet,stress mapping,carbon materials,chemical vapor deposition,phonon properties,Raman spectroscopy,electronic materials,micro-Raman,gallium nitride
更新于2025-09-23 15:21:01
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Rare Fluorescence Observed from Indacenes
摘要： Rare Fluorescence Observed from Indacenes. Significance: Haley and co-workers report a synthesis of a freely soluble, fluorescent dianthracenoindacene (DAI 1). 2,3-Fusion of anthracenes to the indacene core minimizes its paratropicity, making it the least antiaromatic diacenoindacene reported to date. Comment: X-ray crystallographic characterization was provided for DAI 1 and its reduced dianion. The use of a less bulky phenyl group instead of the mesityl group resulted in 1,2-fusion and further oxidation did not proceed. Unlike all previous indenofluorene derivatives, DAI 1 was fluorescent, albeit with a quantum yield of 1%.
关键词： fluorescence,electronic materials,antiaromaticity,indacenes
更新于2025-09-19 17:15:36
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Wearable piezoelectric nanogenerators based on reduced graphene oxide and in situ polarization-enhanced PVDF-TrFE films
摘要： PVDF-TrFE-based wearable nanogenerators were designed and fabricated with enhanced performances via reduced graphene oxides (rGO) and in situ electric polarization. Our laboratory-made polarization system may complete the in situ poling of PVDF-TrFE films in 5 min without heating, which has the advantages of high production efficiency, excellent piezoelectric performances, and favorable uniformity, compared to traditional poling approaches. The addition of rGO into PVDF-TrFE significantly improved the crystallinity of the b-phase PVDF-TrFE and enhanced the formation of hydrogen bonds via interaction of dipoles between rGO and PVDF-TrFE. This further improved the energy-harvesting performances of these piezoelectric nanogenerators with 1.6 times of the open-circuit voltage and 2 times of the power density than that of pure PVDF-TrFE-based devices. The high production efficiency and excellent piezoelectric performances of in situ polarized rGO/PVDF-TrFE make them of great potential for self-powered, wearable/portable devices.
关键词： Electronic materials,Reduced graphene oxide,PVDF-TrFE,Wearable piezoelectric nanogenerators,In situ polarization
更新于2025-09-19 17:15:36
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An excellent resistive switching memory behaviour based on assembled MoSe2 nanosphere arrays
摘要： Resistive switching devices based on oxides have outstanding properties, making them a promising candidate to replace today's transistor-based computer memories as non-volatile memories, and can even find future application in neuromorphic computing. In this work, MoSe2 nanospheres with ~2.0 μm diameter were firstly synthesized by hydrothermal method. Further, a resistive switching (RS) device was prepared using as-assembled MoSe2 nanospheres array acted as functional layer. The device shows excellent RS memory behaviors with stable resistance ratio and high durability. Besides that, the mechanism of RS behavior is explained from the perspective of formation-disruption of conducting filaments (CF) formed by moving of metal ions on the surface of nanospheres by an external electric field. These characteristics give us a new inspiration for the preparation of memristors that is the memory performance of RS can be improved by assembling nanostructured arrays.
关键词： Conducting filaments,MoSe2 nanosphere,Memory device,Electronic materials,Resistive switching
更新于2025-09-16 10:30:52
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Coupling heterostructure of thickness-controlled nickel oxide nanosheets layer and titanium dioxide nanorod arrays via immersion route for self-powered solid-state ultraviolet photosensor applications
摘要： A coupling heterostructure consisting of nickel oxide nanosheets (NNS) and titanium dioxide nanorod arrays (TNAs) was fabricated for self-powered solid-state ultraviolet (UV) photosensor applications. By controlling the thickness of the NNS layer by via varying the growth time from 1 to 5 h at a deposition temperature of 90 °C, the coupling NNS/TNAs heterojunction films were formed and their structural, optical, electrical and UV photoresponse properties were investigated. The photocurrent measured from the fabricated self-powered UV photosensor was improved by increasing the thickness of NNS from 140 to 170 nm under UV irradiation (365 nm, 750 mWcm?2) at 0 V bias. A maximum photocurrent density of 0.510 mA?cm?2 was achieved for a sample with a NNS thickness of 170 nm and prepared with a 3 h NNS growth time. Our results showed that the fabricated NNS/TNAs heterojunction has potential applications for self-powered UV photosensors.
关键词： TiO2 nanorods,Electronic materials,Semiconductors,Immersion route,Photosensor,NiO nanosheets
更新于2025-09-11 14:15:04
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Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon
摘要： Graphitic contacts to semiconductors have been shown to provide highly rectifying current-voltage characteristics coupled with high thermal/chemical stability. Energetically deposited graphitic contacts to p-type Si have exhibited rectification ratios (at ± 1.0 V) up to 106:1 and ideality factors approaching unity. Here, we report temperature dependent current-voltage (I-V-T) measurements performed on such devices. The measurements and subsequent analysis show that during energetic carbon deposition, deleterious oxide/contaminants are removed from the Si substrate surface. The Richardson constant of the p-type Si extracted from the I-V-T measurements agrees with the theoretical value, indicating that the surface contaminants are removed without significant damage to the underlying Si. Therefore, by energetic deposition of C on Si, C-Si junctions can be formed with low lateral inhomogeneity and low interface defect density. These attributes of the junctions enable the observed near-ideal Schottky diode characteristics.
关键词： graphenic carbon,electronic materials,graphitic carbon,Schottky contacts
更新于2025-09-10 09:29:36
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Facile Synthesis and Characterization of Crystalline Iron Phthalocyanine
摘要： Iron phthalocyanine (FePc) has been successfully synthesized by a solvothermal method using 1, 8-Diazabicyclo [5.4.0] undec-7-ene as the catalyst. The crystal structure and the morphology of FePc powder were systematically characterized by X-ray diffraction, Fourier transform infrared spectrometer, ultraviolet-visible absorption spectra and field emission scanning electron microscopy with energy-dispersive spectrometer, respectively. The FePc with a pure β phase is observed with a large yield up to 80%. It shows a rod-like shape in the microstructure. The length is in the range of 200–600 μm and the width is of 5-20 μm. The present FePc could have potential applications for micro-electronic devices.
关键词： Semiconductors,Crystal growth,Electronic materials
更新于2025-09-09 09:28:46
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Surface area, optical and electrical studies on PbS nanosheets (PbSNSs) for visible light photo-detector application
摘要： Herein, we report the morphological, surface area and detailed electrical properties of PbS nanosheets (PbSNSs). Scanning electron microscope elemental mapping confirms the formation of PbS and homogeneous distribution of Pb and S in final product. Morphology was confirmed as NSs by Transmission electron microscopy. Specific surface area was found to be ~ 7 m2/g through Brunauer–Emmett–Teller analysis. Diffused reflectance spectrum was measured and optical energy gap was estimated ~ 1.284 eV. Such value of energy gap makes it suitable for solar cell and other optoelectronic applications. An increase in photosensitivity with increasing the light intensity was observed due to increase in generation rate of photo-carriers. The recombination value is calculated ~ 0.59, it indicates that the defect states continuously distributed in energy gap. Differential lifetime increases with time and also life time of current carrier is enhanced with light intensity.
关键词： Electron microscopy,Electronic materials,Semiconductor,Electrical properties
更新于2025-09-09 09:28:46