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Effect of processing conditions on additive DISC patterning of P3HT films
摘要： There is a critical need to develop a method to pattern semiconducting polymers for device applications on the sub-micrometer scale. Dopant induced solubility control (DISC) patterning is a recently published method for patterning semiconductor polymers that has demonstrated sub-micron resolution. DISC relies on the sequential addition of molecular dopants (here 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ)) to the conjugated polymer. In doped areas, the conjugated polymer is protected from dissolution while in undoped areas, the polymer dissolves into solution. Here we examine factors that affect the resolution of the developed pattern. Two factors are determined to be critical to pattern resolution, the initial crystallinity of the polymer, here poly(3-hexylthiophene) (P3HT), and the quality of the development solvent. We find that dopants diffuse more readily in highly crystalline films than in amorphous films of P3HT and that dopant diffusion reduces the fidelity of the resulting pattern. We also find that the choice of development solvent affects both the fidelity of the pattern and dopant distribution within the patterned polymer domains. Finally, we show that a dopant that diffuses more slowly than F4TCNQ in the P3HT film can be used to pattern the film with higher fidelity. These results together provide a road map for optimizing additive DISC patterning for any polymer/dopant pair.
关键词： crystallinity,semiconducting polymers,development solvent,pattern fidelity,P3HT,DISC patterning,F4TCNQ
更新于2025-11-21 11:08:12
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Spectroscopic Studies of Charge-Transfer Character and Photoresponses of F <sub/>4</sub> TCNQ-Based Donora??Acceptor Complexes
摘要： F4TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) is used widely as a hole-doping agent in photoresponsive organic semiconducting materials, yet relatively little is known about the photoresponses of the F4TCNQ?? anion generated via doping. Furthermore, there is still relatively little systematic exploration of how the properties of the local material or chemical environment impacts the driving force for generating these charge-transfer complexes. Here we present spectroscopic and photophysical studies of F4TCNQ in charge-transfer complexes (CTCs) with the electron donor N,N′-diphenyl-N-N′-di-p-tolylbenzene-1,4-diamine (MPDA) both in dichloroethane solution and polystyrene matrices. Integer charge transfer (ICT) between donor and acceptor occurs readily in dichloroethane solvent to form F4TCNQ??:MPDA+ CTCs, due to a ～150 mV difference in MPDA+/MPDA and F4TCNQ/F4TCNQ?? reduction potentials. Ultrafast spectroscopic studies of the CTC as well as electrochemically generated F4TCNQ?? and MDPA+ reveal that the photoresponses of these CTCs are dominated by that of the dopant anion, including rapid deactivation (800 fs) after excitation to the anion D1 excited state, followed by slower (～10 ps) vibrational cooling in the anion D0 state. Excitation to the higher-lying D2 state results in a rapid relaxation to the D1 state, in contrast to direct D2 → D0 relaxation previously observed for F4TCNQ?? in the gas phase. CTCs embedded in polystyrene (PS) matrices are observed to lose their integer charge-transfer character upon evaporation of solvent, as evidenced by changes to electronic and vibrational absorption features associated with F4TCNQ??. This change is attributed to the loss of solvent stabilization of the ion pair formed through the charge-transfer reaction. Ultrafast spectral measurements reveal that the photoresponses of the partial charge-transfer (PCT) species embedded in PS are still highly similar to those of the ICT species and unlike that of neutral F4TCNQ, implying the electronic properties of the PCT state are likewise dominated by properties of the reduced acceptor molecule. We conclude that excitation of ICT or PCT states introduces optical losses for photoresponses of doped organic semiconductor materials due to the large anion absorption cross section and its rapid, dissipative deactivation dynamics.
关键词： photoresponses,ultrafast spectroscopy,charge-transfer complexes,F4TCNQ,organic semiconducting materials
更新于2025-09-23 15:19:57
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Novel electronic structures and enhanced optical properties of boron phosphide/blue phosphorene and F4TCNQ/blue phosphorene heterostructures: a DFT + NEGF study
摘要： Blue phosphorene (Blue-p), an allotrope of black phosphorene, has attracted extensive interest due to its hexagonal crystal with a flat arranged layer of phosphorus atoms. However, the indirect band gap of Blue-p greatly hinders its applications in optoelectronics. By stacking both boron phosphide (BP) and the organic molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) with Blue-p, we construct BP/Blue-p and F4TCNQ/Blue-p heterostructures. We reveal that the BP/Blue-p heterostructure possesses a direct band gap of 0.605 eV and is tunable via in-plane strain and an external electric field. Moreover, it also has remarkable optical absorption in the UV region and enhanced transport properties. Furthermore, by doping with F4TCNQ, the F4TCNQ/Blue-p heterojunction displays type-II semiconducting properties with a flat valence band and Van Hove singularities at the Fermi level, which can be used to achieve extremely low in-band tunneling, yielding low static power dissipation and large drive currents in the ON regime of transistors. Due to the superior electronic, optical and transport properties, Blue-p-based heterostructures are promising candidates for electronic and optical device applications.
关键词： DFT,optical properties,electronic properties,transport properties,Blue phosphorene,heterostructures,boron phosphide,F4TCNQ,NEGF
更新于2025-09-23 15:19:57
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Correlation of Coexistent Charge Transfer States in F <sub/>4</sub> TCNQ-Doped P3HT with Microstructure
摘要： Understanding the interaction between organic semiconductors (OSCs) and dopants in thin films is critical for device optimization. The proclivity of a doped OSC to form free charges is predicated on the chemical and electronic interactions that occur between dopant and host. To date, doping has been assumed to occur via one of two mechanistic pathways: an integer charge transfer (ICT) between the OSC and dopant or hybridization of the frontier orbitals of both molecules to form a partial charge transfer complex (CPX). Using a combination of spectroscopies, we demonstrate that CPX and ICT states are present simultaneously in F4TCNQ-doped P3HT films and that the nature of the charge transfer interaction is strongly dependent on the local energetic environment. Our results suggest a multiphase model, where the local charge transfer mechanism is defined by the electronic driving force, governed by local microstructure in regioregular and regiorandom P3HT.
关键词： F4TCNQ,organic semiconductors,dopants,microstructure,charge transfer,P3HT
更新于2025-09-10 09:29:36
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The Origin of the π-π Spacing Change upon Doping of Semiconducting Polymers
摘要： While there is agreement about the local structural order of semiconducting polymers such as poly(3-hexylthiophene) (P3HT), there is still debate over the impact of molecular doping. One prevalent interpretation is that dopant molecules intercalate in the π-π stacking of crystallites; however, this idea has recently been challenged. We present here electron diffraction measurements of P3HT doped with the two dopants 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) and molybdenum tris[1-(methoxycarbonyl)-2-(trifluoromethyl)-ethane-1,2-dithiolene] (Mo(tfd-CO2Me)3), which have considerably different sizes and shapes, processed by different doping techniques. We observe a reduction in the π-π spacing of P3HT upon doping with both dopant molecules and doping techniques. These data are not consistent with both of the dopants intercalating in the π-π stacks and an alternative explanation is, therefore, required to explain these results. Density functional theory calculations for P3HT model oligomers suggest that the polaron delocalizes between adjacent chains and thus leads to attractive forces that reduce the π-π spacing, without the physical presence of any dopant molecules. Our study emphasizes that not only geometric effects induced by dopant molecules lead to the observed reduction of π-π spacing, but the charging itself.
关键词： semiconducting polymers,electron diffraction,π-π spacing,F4TCNQ,Mo(tfd-CO2Me)3,density functional theory,molecular doping,P3HT
更新于2025-09-10 09:29:36
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Designing Conjugated Polymers for Molecular Doping: The Roles of Crystallinity, Swelling, and Conductivity in Sequentially-Doped Selenophene-Based Copolymers
摘要： Although chemical doping is widely used to tune the optical and electrical properties of semiconducting polymers, it is not clear how the degree of doping and the electrical properties of the doped materials vary with the bandgap, valence band level, and crystallinity of the polymer. We address this question utilizing a series of statistical copolymers of poly(3-hexylthiophene) (P3HT) and poly(3-heptylselenophene) (P37S) with controlled gradients in bandgap, valence band position and variable crystallinity. We dope the copolymers in our series with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) using solution sequential processing (SqP). We then examine the structures of the films using grazing incidence wide-angle x-ray scattering (GIWAXS), differential scanning calorimetry (DSC) and ellipsometric porosimetry, and the electrical properties of the films via the AC Hall effect. We find that the ability of a particular copolymer to be doped is largely determined by the offset of the polymer’s valence band energy level relative to the LUMO of F4TCNQ. The ability of the carriers created by doping to be highly mobile and thus contribute to the electrical conductivity, however, is controlled by how well the polymer can incorporate the dopant into its crystalline structure, which is in turn influenced by how well it can be swelled by the solvent used for dopant incorporation. The interplay of these effects varies in a non-monotonic way across our thiophene:selenophene copolymer series. The position and shape of the polaron absorption spectrum correlate well with the polymer crystallinity and carrier mobility, but the polaron absorption amplitude does not reflect the number of mobile carriers, precluding the use of optical spectroscopy to accurately estimate the mobile carrier concentration. Overall, we find that the degree of crystallinity of the doped films is what best correlates with conductivity, suggesting that only carriers in crystalline regions of the film, where the dopant counterions and polarons are forced apart by molecular packing constraints, produce highly mobile carriers. With this understanding, we are able to achieve conductivities in this class of materials exceeding 20 S/cm.
关键词： semiconducting polymers,conductivity,ellipsometric porosimetry,GIWAXS,solution sequential processing,valence band level,F4TCNQ,poly(3-heptylselenophene),AC Hall effect,poly(3-hexylthiophene),DSC,bandgap,chemical doping,crystallinity
更新于2025-09-04 15:30:14