[Springer Theses] Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors || Fabrication, Characterization and Parameter?Extraction of InAs Nanowire-Based Device

摘要： Nanofabrication, low noise electrical measurement and various nanoscale characterization methods are frequently used in the study. This chapter will give as introduction on the growth method, fabrication techniques, characterization methods of materials and devices, measurement systems, and way to extract the electrical parameters of InAs nanowires FET devices.