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Active control of anapole states by structuring the phase-change alloy Ge2Sb2Te5
摘要： High-index dielectric nanoparticles supporting a distinct series of Mie resonances have enabled a new class of optical antennas with unprecedented functionalities. The great wealth of multipolar responses has not only brought in new physical insight but also spurred practical applications. However, how to make such a colorful resonance palette actively tunable is still elusive. Here, we demonstrate that the structured phase-change alloy Ge2Sb2Te5 (GST) can support a diverse set of multipolar Mie resonances with active tunability. By harnessing the dramatic optical contrast of GST, we realize broadband (Δλ/λ ~ 15%) mode shifting between an electric dipole resonance and an anapole state. Active control of higher-order anapoles and multimodal tuning are also investigated, which make the structured GST serve as a multispectral optical switch with high extinction contrasts (>6 dB). With all these findings, our study provides a new direction for realizing active nanophotonic devices.
关键词： active tuning,nanophotonics,phase-change materials,anapole states,GST,Mie resonances
更新于2025-09-19 17:15:36
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Tunable near-infrared perfect absorber based on the hybridization of phase-change material and nanocross-shaped resonators
摘要： Ge2Sb2Te5 (GST) is a kind of non-volatile chalcogenide phase-change material, which has a significant difference in permittivity between its amorphous and crystalline states in the infrared range. On account of this remarkable property, the combination of GST and metamaterials has great potential in tunable meta-devices. In this paper, a perfect absorber based on a nanocross-resonator array stacked above a GST spacer layer and an Au mirror (i.e., a metal-dielectric-metal configuration) is designed and experimentally demonstrated. A thin indium tin oxide (ITO) protective layer is inserted between the GST spacer and the Au resonator to avoid heat-induced oxidation of the GST layer during phase transition. We found that the ITO layer not only can protect the GST layer from deterioration, but also allows a significant blue shift in the absorption peak from 1.808 lm to 1.559 lm by optimizing the thickness of the two dielectric layers without scaling down the size of the metal structure, which provides a more feasible idea in pushing the absorption peak to higher frequency. The LC circuit model is presented to explain this blue-shift phenomenon, which is mainly attributed to the engineering of the dielectric environment of the parallel plate capacitance. In addition, such good performance in dynamitic modulation makes this perfect absorber a robust candidate for optical switching and modulating in various situations.
关键词： metamaterials,near-infrared,nanocross-shaped resonators,phase-change material,tunable,perfect absorber,GST
更新于2025-09-09 09:28:46
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Bi L<sub>III</sub>-Edge XAFS Study of GeBiTe Phase-Change Recording Material Using Actual Media
摘要： The crystallization of GeBiTe (GBT) is faster than that of the well-known phase-change recording material GeSbTe (GST). Therefore, the investigation of GBT structure as well as its crystallization process is attractive. Accordingly, the high-speed crystallization of GBT is due to Bi. Thus, it was necessary to know the local structure around Bi within the amorphous GBT. Note that an interface layer, which is a very thin dielectric film adjacent to recording film, assists the crystallization of phase-change material in the optical recording media. The local structure around Bi in GBT within an actual media was analyzed using XAFS. Bi LIII-edge XAFS spectra of crystalline and amorphous GBT respectively, both with and without interface layer in the media, were obtained. As result of this analysis on GBT, nearest neighbor atom of Bi was found to be Ge. Moreover, within the amorphous GBT, the interatomic distance around Bi is larger than that around Ge. These are the differences between GST and GBT. We speculate that these factors contribute to the improvement of the GBT crystallization speed. On the other hand, the interface layer doesn’t influence the local structure of GBT; however, it does have an electric effect on the recording layer.
关键词： interatomic distance,higher crystallization speed,rewritable optical recording media,Bi LIII-edge,GeSbTe(GST),phase-change material,actual media,EXAFS,interface layer,GeBiTe(GBT)
更新于2025-09-04 15:30:14