- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Electronic Structures of Ge <sub/>2</sub> Sb <sub/>2</sub> Te <sub/>5</sub> /Co <sub/>2</sub> FeX (X: Al, Si) Interfaces for Phase Change Spintronics
摘要： Phase change materials (PCMs), such as Ge2Sb2Te5, are highly attractive in modern electronics and photonics. However, their spintronic applications remain largely unexplored. Here, we propose a tentative modality of phase change spintronic devices based on the ferromagnet/PCM/ferromagnet structure. The electrically tunable properties of a PCM interlayer give rise to new possibilities of manipulating spin transport through phase change, adding new functionalities and modes of operation to the spintronic devices. As the first step toward realizing such phase change spintronic devices, we calculate the electronic structures of the interfaces of c-Ge2Sb2Te5 and half-metallic ferromagnetic Co2FeX (X: Al, Si). The interfaces are found not to be genuine half-metallic, indicating room for improvement. The band alignments are largely determined by the termination of c-Ge2Sb2Te5. Two types of band alignments are found for c-Ge2Sb2Te5/Co2FeX interfaces. Considering c-Ge2Sb2Te5 as heavily p-type-doped, interfaces with Te termination are generally suitable such that they offer low contact resistance for hole injection from Co2FeX to c-Ge2Sb2Te5 in the majority spin channel; at the same time, they naturally form tunneling barriers, alleviating the degradation of spin injection efficiency because of occasional hole injection in the minority spin channel. This work provides important insights into this proposed phase change spintronic framework.
关键词： Spintronics,Electronic structures,Co2FeX,Interface,Phase change materials,Ge2Sb2Te5
更新于2025-09-23 15:21:01
-
First-principles calculations on effects of Al and Ga dopants on atomic and electronic structures of amorphous Ge <sub/>2</sub> Sb <sub/>2</sub> Te <sub/>5</sub>
摘要： Effects of post-transition metal dopants M (M = Al, Zn, and Ga) on structural and electronic properties of amorphous Ge2Sb2Te5 (a-GST) are investigated through first-principles calculations based on the density functional theory. The doped a-GST is generated through the melt-quench procedure using molecular dynamics simulations. It is found that the three dopants behave similarly in a-GST, and they are mostly coordinated by Te atoms in tetrahedral geometry, which is similar to those in crystalline MxTey. This is in contrast with crystalline GST wherein the most stable position of dopant M is the octahedral vacancy site. The number of wrong bonds such as Ge–Ge, Ge–Sb, or Sb–Sb increases as dopant atoms predominantly bond with Te atoms. The number of 4-fold ring structures, especially ABAB-type, decreases significantly, explaining the enhanced thermal stability of doped a-GST in the experiment. The bandgap estimated from density of states and the optical gap obtained from Tauc plot increase upon doping, which is also in good agreement with the experiment. By successfully relating the experimental doping effects and changes in the atomic structure, we believe that the present work can serve as a key to offer better retention and lower power consumption in phase-change memory.
关键词： amorphous Ge2Sb2Te5,electronic structures,first-principles calculations,atomic structures,Al and Ga dopants
更新于2025-09-19 17:15:36
-
Realization of near-infrared active Fano-resonant asymmetric metasurface by precisely controlling the phase transition of Ge2Sb2Te5
摘要： Realization of near-infrared active Fano-resonant asymmetric metasurface by precisely controlling the phase transition of Ge2Sb2Te5
关键词： Ge2Sb2Te5,metasurface,phase transition,near-infrared,Fano resonance
更新于2025-09-19 17:13:59