MoS2/silicon-on-insulator Heterojunction Field-Effect-Transistor for High-performance Photodetection

摘要： In this letter, we demonstrate a novel junction field effect transistor (JFET) by transferring MoS2 onto silicon-on-insulator (SOI) substrate to control the thin Si channel. By combining high light absorption coefficient in MoS2 with high internal gain in thin Si channel, the device can be used for photodetection and achieve high responsivity up to ~1.78×104 A/W, high detectivity over 3×1013 Jones, and short response time down to 1.44 ms. Furthermore, unlike conventional SOI photodetector which is only sensitive to UV light, the response spectrum of our proposed device peaks in visible/near-infrared region, which is interesting for imaging and optical communication applications.