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Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures
摘要： The joint effect of the heat transfer and the electronic properties in the InGaN/GaN based quantum well (QW) heterostructures has been investigated theoretically and numerically. One-dimensional Schr?dinger equation solver coupled with Poisson equation solver and Dual-phase-lagging (DPL) heat conduction solver has been developed. The numerical results suggest that the DPL heat conduction equations capture the microscale responses caused by the phonon-electron interaction. Both effects of the polarization charge and conduction band offset between the InGaN/GaN interfaces lead to the creation of the two-dimensional electron gas (2DEG) on the lower interface of the QW. It is found that the 2DEG density at the triangular quantum well increases with increasing Indium (In) composition. This increase is the same for the conduction band offset and the electron density. As a consequence, an increase of the heat dissipation and the temperature is observed at the lower interface of the quantum well.
关键词： Indium composition,Polarization charge,Nanoscale heat transfer,Dual-phase-lagging model,InGaN heterostructure
更新于2025-09-23 15:22:29
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Effect of Indium Composition on the Microstructural Properties and Performance of InGaN/GaN MQWs Solar Cells
摘要： In the present work, InGaN/GaN multiple quantum wells (MQWs) solar cells with different concentrations of indium have been investigated in-depth. It was demonstrated that applying a medium-high indium content (about 28%) does not facilitate solar cell photoelectric conversion efficiency due to the increase of edge dislocations. Moreover, the effects of different indium contents on InGaN/GaN MQWs solar cells were investigated and was revealed, that the short-circuit current density and photoelectric conversion efficiency are improved with the increase of indium contents. However, they show a noticeable reduction in the indium content of 28%. Furthermore, the optical properties and the behaviour of the microstructure defects were analysed. It was also demonstrated that the number of edge dislocations acted as non-radiation recombination centers increasing rapidly when the indium content reaches 28%, playing a key role in decreasing the active number of photon-generated carriers. As a result, the short-circuit current density and photoelectric conversion efficiency decrease obviously for an indium content of 28%. This work can provide insight into the origin of the degradation of these structures and the improvement of device design with medium-high indium contents.
关键词： solar cells.,InGaN/GaN multiple quantum wells (MQWs),microstructure and performance,Indium composition
更新于2025-09-12 10:27:22
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Investigation on the effect of indium composition on ultrafast carrier dynamics in InGaN alloys
摘要： In this letter, we investigated the effect of indium composition on carrier relaxation mechanisms in InGaN alloys. Four high quality alloys with indium composition from 25% to 75% were fabricated using energetic neutral atomic-beam lithography/epitaxy molecular beam epitaxy. Using sub-picosecond resolved photoluminescence at high carrier density, it was found the effective carrier lifetime extends with increasing indium composition. Moreover, the calculated initial carrier temperature also rises with higher indium composition. These results are consistent with the theoretical prediction that a greater phonon bandgap could reduce the carrier cooling rate to a certain extent via hot carrier bottleneck effect.
关键词： InGaN alloys,indium composition,carrier dynamics,photoluminescence,molecular beam epitaxy
更新于2025-09-10 09:29:36