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LiGa0.54In0.46S2: A New Infrared Nonlinear Optical Material with Large Laser Damage Threshold Designed by Gallium substitution in LiInS2
摘要： Larger second-order harmonic generation (SHG) efficiency and high laser damage threshold (LDT) are two crucial requirements for the practical applications of IR nonlinear optical (NLO) materials. Li-(Ga, In)-Q2 (Q = S, Se) is a well-known IR NLO materials system, in which In–Q bonds are more covalent than Ga–Q bonds and benefit larger SHG efficiency. However, the incompatibility between LDT and SHG leads to a smaller LDT of LiInS2 than that of LiGaS2. A new IR NLO compound LiGa0.54In0.46S2 was successfully synthesized by the introduction of gallium in LiInS2, where mixing Ga3+ in In3+ sites result in a wider band-gap of 3.86 eV and a smaller thermal expansion anisotropy value (0.26) compared with LiInS2, leading to the large LDT of 12 times that of commercial AgGaS2 under 1064 nm at room temperature. Meanwhile, the title compound had a relatively strong SHG efficiency of about 0.6 times that of AgGaS2 under a 1910 nm laser radiation. This work highlights the strategy of pursuing IR NLO materials with high LDTs by atom doping in classic material systems.
关键词： laser damage threshold,Infrared nonlinear optical,second-order harmonic generation
更新于2025-09-23 15:19:57
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Rb <sub/>10</sub> Zn <sub/>4</sub> Sn <sub/>4</sub> S <sub/>17</sub> : A Chalcogenide with Large Laser Damage Threshold Improved from the Mn-Based Analogue
摘要： In the military and civilian fields, with the development of new technologies, high-powered nonlinear optical (NLO) crystals demonstrate broad application prospects. For purposes of designing a better NLO material, a new chalcogenide Rb10Zn4Sn4S17 was successfully designed with a high temperature solid-state method on the basis of previously reported compound Sr3MnSn2S8. The experimental results indicate that Rb10Zn4Sn4S17 possesses a prominent band gap of 3.59 eV, compared with the laser damage threshold (LDT) of Sr3MnSn2S8 (3 times that of AgGaS2); Rb10Zn4Sn4S17 shows an outstanding LDT about 5 times that of AgGaS2. Meanwhile, it has an ideal second harmonic generation (SHG) response approximately 0.7 times that of AgGaS2.
关键词： second harmonic generation (SHG),laser damage threshold (LDT),chalcogenide,nonlinear optical (NLO) crystals
更新于2025-09-19 17:13:59
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Growth, structural, Hirshfeld surface, optical, laser damage threshold, dielectric and chemical etching analysis of 4-dimethylaminopyridinium 4-nitrophenolate 4-nitrophenol (DMAPNP)?single crystal
摘要： The organic 4-dimethylaminopyridinium 4-nitrophenolate 4-nitrophenol (DMAPNP) single crystal was grown by slow evaporation solution growth technique at 35 °C. The single crystal X-ray diffraction analysis confirms that the grown crystal belongs to the orthorhombic crystal system with the space group of P212121. Different functional groups were affirmed using FT-IR and FT-Raman analysis. The intermolecular interactions of the DMAPNP molecule were executed using Hirshfeld surface study. The Mulliken atomic charge population analysis was performed using density functional theory (DFT). The bonding interactions between two orbital atoms and groups were executed by the density of state (DOS). The optical transmittance study shows that the grown crystal has 60 to 78% transmittance in the Vis–NIR region. It has an emission peak at 482 nm in the photoluminescence (PL) spectrum. The photoconductivity analysis shows that the DMAPNP has negative photoconductive behavior. The thermal stability of the DMAPNP crystal was investigated by TG–DTA analysis. The etch pit density of the title crystal was investigated using chemical etching study. The mechanical stability of the DMAPNP crystal was tested by Vickers microhardness tester. Laser damage threshold analysis reveals that the DMAPNP is stable up to 10 mJ of laser power. The dielectric properties were assessed and the electronic polarizability of the DMAPNP was evaluated by the different empirical relations. The second harmonic generation (SHG) efficiency of DMAPNP crystal was measured by Kurtz–Perry powder technique.
关键词： optical,4-dimethylaminopyridinium 4-nitrophenolate 4-nitrophenol (DMAPNP) single crystal,Growth,chemical etching analysis,dielectric,Hirshfeld surface,structural,laser damage threshold
更新于2025-09-16 10:30:52
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From CuFeS <sub/>2</sub> to Ba <sub/>6</sub> Cu <sub/>2</sub> FeGe <sub/>4</sub> S <sub/>16</sub> : rational band gap engineering achieves large second-harmonic-generation together with high laser damage threshold
摘要： A new germanium-based sulfide, Ba6Cu2FeGe4S16, achieves a band-gap broadening of more than 1 eV relative to CuFeS2. Remarkably, Ba6Cu2FeGe4S16 exhibits excellent comprehensive NLO performance (SHG, 1.5 (cid:2) AgGaSe2; LDT, 2 (cid:2) AgGaSe2), satisfying the essential requirements of mid-IR NLO candidates.
关键词： laser damage threshold,mid-IR NLO materials,germanium-based sulfide,second-harmonic-generation,band-gap engineering
更新于2025-09-16 10:30:52
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Crystal growth and optical characterization of an organic single crystal for frequency conversion applications
摘要： Organic nonlinear optical 2-methylquinolinium L-malate single crystals have been grown by slow evaporation solution growth technique from a mixture of 2-methylqiunoline and L-malic acid in ethanol solution at ambient temperature. Single crystal X-ray diffraction analysis reveals that grown crystal in monoclinic system with non-centrosymmetric space group P21 and the lattice parameters are a = 7.35 ?, b = 26.51 ?, c =10.83 ?, α = γ = 90o, β = 102.95o and V = 2057.4 ?3. UV-vis spectrum indicates that the crystal is transparent (75%) in the entire visible region with a cut-off wavelength of 437 nm and optical energy band gap Eg is found to be 2.71 eV. Microhardness measurement reveals the mechanical strength of the grown crystal. The photoluminescence spectrum shows the blue emission of the crystal. Laser damage threshold studies was carried out to ascertain the suitability of grown crystal for laser applications.The relative second harmonic generation efficiency of 2-methlquinolinium L-malate crystal was found to be two times greater than that of KDP.
关键词： Photoluminescence,Optical band gap,SHG studies,Laser damage threshold,Crystal growth
更新于2025-09-10 09:29:36
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Ba10Zn7M6Q26: Two New Mid-infrared Nonlinear Optical Crystals with T2 Supertetrahedron 3D Framework
摘要： Two new mid-infrared (MIR) nonlinear optical (NLO) chalcogenide crystals, Ba10Zn7In6S26, 1 and Ba10Zn7Ga6Se26, 2 are discovered by traditional solid state reactions. 1 and 2 are isostructural and they represent a novel three-dimensional (3D) framework made by apexe-sharing T2 supertetrahedron 2D layers that are stacked alternately by another kind of T2 supertetrahedra though sharing apexes along the c direction, with T1 tetrahedra inserting in the tunnels and Ba2+ cations locating both in the voids and tunnels. Among them, 1 shows attractive MIR NLO properties of a wide band gap of 3.0 eV, a strong second harmonic generation (SHG) signal about 4.1 times that of the commercial AgGaS2 at particle sizes of 30–46 μm under a 2.05 μm laser radiation, and a high LDT of 37.2 times that of benchmark AgGaS2 at particle sizes of 150–210 μm under a 1.064 μm laser radiation. This distinguishes 1 as a new promising MIR NLO material. In addition, the density functional theory (DFT) analyses suggest that the SHG response of 1 comes mainly from the electronic transitions from S 3p to Ba 5d, Zn 4s, Zn 3d, In 5s, In 5p states.
关键词： chalcogenide,mid-infrared,second harmonic generation,laser damage threshold,nonlinear optical,supertetrahedron
更新于2025-09-04 15:30:14