- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Influence of gold nanolayer coating on the continuous-wave laser ablation of a pure aluminum surface: Evaluations of structural and optical features
摘要： In this paper, formation of uniform and large-area micro/nanostructures on pure aluminum surfaces using a continuous-wave laser irradiation is presented. Gold nanolayer coating was utilized as a confinement layer for controlling the possible hydrodynamic phenomena in a molten area. Dependency of the laser-induced morphology on the thickness of a gold coating was investigated in this regard. Scanning electron microscopy, energy dispersive spectroscopy, grazing test of the X-ray diffraction, and optical absorption/reflection spectroscopy in UV/visible/IR ranges were employed to characterize the samples. Results showed that the formation of uniform structures of average sizes of 50 nm-5μm on aluminum surface was possible following the irradiation of a continuous-wave CO2 laser, delivering 130 W beam power. Alterations of the surface morphology brought about an increase in specific absorption peaks at the UV region and the appearance of an absorption peak in the visible range. In addition, these structure-covered surfaces provided interesting reflection behaviors in different spectral areas, which can clearly reflect their high potential to be used as selective solar absorbers. The results of this investigation indicated that optical characteristics such as absorption and emission coefficients as well as ξ factor were 0.98, 0.13, and 7.53, respectively. It can therefore be concluded that this process can be considered an efficient and fast technique to fabricate selective solar absorbers.
关键词： Nanostructures,Aluminum,Selective solar absorber,Sputtering,Nanolayer,Continuous-wave CO2 laser,Gold,Black carbon
更新于2025-09-23 15:22:29
-
Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer
摘要： In this work, we present a pentacene-based organic ?eld-e?ect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ±60 V and a retention time of up to 104 s.
关键词： memory window modulation,integrated hybrid nanolayer,organic ?eld-e?ect transistor memory device,carbon quantum dots
更新于2025-09-23 15:21:01
-
Engineering of effective back-contact barrier of CZTSe: Nanoscale Ge solar cells – MoSe2 defects implication
摘要： Using temperature-dependent measurements and device modeling, we systematically study the e?ective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge con?gurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion e?ciency by 1.1%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge ?lms on the back-contact device characteristics. Based on empirical results, modeling is performed for the in?uence of MoSe2 defects on the e?ective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95% con?dence-level. The conversion e?ciency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3%.
关键词： Schottky barrier,Thin ?lm solar cells,CZTSe,Kesterite,Back-contact,Ge nanolayer
更新于2025-09-12 10:27:22