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Transparent p-Cu0.66Cr1.33O2/n-ZnO heterojunction prepared in a five-step scalable process
摘要： Transparent and electrical conducting p-type off-stoichiometric copper–chromium oxide thin films were used to build p-Cu0.66Cr1.33O2/n-ZnO heterojunctions. The junctions were fabricated in a novel and simple five step process including metal organic chemical vapour deposition, atomic layer deposition, chemical wet etching, and optical lithography. One last step of thermal annealing, with varying temperatures of 650 and 700 °C, is added in order to tune the electrical properties of delafossite and consequently the electrical features of p–n junctions. This work was developed to address the lack of transparent and industrially scalable rectifying p–n junctions that can open multiple application paths in transparent electronics. A competitive ideality factor η of 6.6 and a transmittance in the visible range of 50% were achieved. An understanding of the electronic response of junctions is presented herein as well as a deepening comprehension of the physical properties of materials, with the bands alignment and the Fermi level tuning.
关键词： Atomic layer deposition,Optical lithography,Thermal annealing,Delafossite,Metal organic chemical vapour deposition,p-Cu0.66Cr1.33O2/n-ZnO heterojunctions,Transparent electronics,Chemical wet etching,Fermi level tuning
更新于2025-09-10 09:29:36
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Reference Module in Materials Science and Materials Engineering || Optical Lithography
摘要： Optical lithography is a photon-based technique comprised of projecting, or shadow casting, an image into a photosensitive emulsion (photoresist) coated onto the substrate of choice. Today it is the most widely used lithography process in the manufacturing of nano-electronics by the semiconductor industry, a $400 Billion industry worldwide. Optical lithography’s ubiquitous use is a direct result of its highly parallel nature allowing vast amounts of information (i.e., patterns) to be transferred in a very short time. For example, considering the specification of a modern leading edge scanner (150–300-mm wafers per hour and 40-nm two-dimensional pattern resolution), the pixel throughput can be found to be approximately 1.8T pixels per second. Continual advances in optical lithography capabilities have enabled the computing revolution we have undergone over the past 50 years.
关键词： Nano-electronics,Numerical Aperture (NA),Coherence,Resolution,Photoresist,Depth of Focus (DOF),Optical Lithography,Extreme Ultraviolet (EUV),Semiconductor
更新于2025-09-10 09:29:36