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Preparing Semiconducting Nanoribbons with Tunable Length and Width via Crystallization-Driven Self-Assembly of a Simple Conjugated Homopolymer
摘要： Precise control of width and length of one-dimensional (1D) semiconducting nanostructures has attracted much attention owing to its potential for optoelectronic applications. However, regulating both their length and width using conjugated polymers or even block copolymers is a huge challenge. To solve this problem, we synthesized a unique conjugated polyacetylene homopolymer by living cyclopolymerization, which spontaneously formed 1D nanoribbons via in situ nanoparticlization. Interestingly, their widths could be controlled from 8 to 41 nm, which were directly proportional to their degree of polymerization. Furthermore, a self-seeding technique via crystallization-driven self-assembly (CDSA) was used to control the length of the nanoribbons up to 5.2 μm with narrow distributions less than 1.1. Interestingly, adding a block copolymer unimer to these nanoribbons produced triblock comicelles by the living CDSA mechanism. Finally, these nanoribbons were visualized directly by super-resolution optical fluorescence microscopy. Now, one can modulate both length and width of 1D nanoribbons simultaneously.
关键词： semiconducting nanostructures,crystallization-driven self-assembly,nanoribbons,optoelectronic applications,conjugated polymers
更新于2025-09-23 15:21:21
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Profound optical analysis for novel amorphous Cu2FeSnS4 thin films as an absorber layer for thin film solar cells
摘要： In this study, quaternary kesterite Cu2FeSnS4 (CFTS4) has been selected due to its interesting optical and electrical characteristics. The CFTS4 films were prepared by exploiting the chemical bath deposition process at room temperature. The films were prepared at different deposition periods (1, 3, 5 and 7 h). The EDAX technique was helped in evaluating the compositional element ratio which near to 2:1:1:4. The morphology and structure of CFTS4 films have been examined by utilizing X-ray diffraction, and field emission scanning electron microscope techniques. XRD charts revealed the absence of sharp peaks and approved the amorphous nature of films under investigations. The transmittance and reflectance data were employed to compute the linear and nonlinear optical constants of the as-deposited CFTS4 films. The energy gap calculations for the CFTS4 films grown on glass substrate displayed a direct energy gap and by increasing the deposition time, a reduction in energy gap values from 1.41 to 1.19 eV was obtained. The deep analysis of linear/nonlinear optical properties as a function of deposition time has revealed many characteristics of the investigated films. Moreover, the nonlinear parameters (refractive index n2, nonlinear absorption coefficient βc and the third-order nonlinear optical susceptibility χ(3)) of the CFTS4 films were boosted with rising up the film thickness and their high values imply the possibility of utilizing these films in various optoelectronic applications.
关键词： Optical conductivity,Energy gap,Optoelectronic applications,Chemical bath deposition technique,CFTS4 thin films
更新于2025-09-23 15:21:01
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Enhancing the performance of LARP-synthesized CsPbBr <sub/>3</sub> nanocrystal LEDs by employing a dual hole injection layer
摘要： Lead halide perovskites have been considered promising materials for optoelectronic applications owing to their superior properties. CsPbBr3 nanocrystals (NCs) with a narrow particle size distribution and a narrow emission spectrum are synthesized by ligand-assisted re-precipitation (LARP), a low-cost and facile process. In inverted CsPbBr3 NC LEDs, a dual hole injection layer (HIL) of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN)/MoO3 is introduced to enhance hole injection and transport, because HAT-CN can extract electrons easily from the hole transport layer and leave a large number of holes there. The current and power efficiencies of the optimized device with a dual HIL are 1.5- and 1.8-fold higher than those of the single HIL device. It is believed that the dual HAT-CN/MoO3 HIL effectively promotes hole injection and has promise for application in many other devices.
关键词： Ligand-assisted re-precipitation,Optoelectronic applications,Lead halide perovskites,CsPbBr3 nanocrystals,Dual hole injection layer,HAT-CN/MoO3
更新于2025-09-23 15:21:01
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Exploring the Carrier Dynamics in Zinc Oxide-Metal Halide Based Perovskites Nanostructures: Towards Reduced Dielectric Loss and Improved Photocurrent
摘要： Metal-halide based perovskites have emerged as a potential candidate for optoelectronic applications due to their impressive performance achieved by tuning the optical/electrical properties through tailoring the perovskite nanostructures. Herein, we report the synthesis of composite nanostructures by incorporation of ZnO (~6 nm) into CsPbBr3 (CPB) perovskite framework, which has significant enhancement of photocurrent, due to efficient interfacial charge separation and reduced dielectric loss. Detailed steady state and time resolved PL studies have been carried out to understand charge transfer dynamics in CsPbBr3/ZnO nanostructure composite system. Femtosecond transient absorption and broadband dielectric spectroscopy studies were carried out to determine the charge carrier relaxation and transfer mechanism. Redox energy level diagram suggests photo-excited electron from conduction band (CB) CPB can be transferred to the CB of ZnO NP due to thermodynamic viability. Ultrafast studies reveal the electron transfer take place from the perovskite nanostructures to ZnO NP within ～500 fs and limits of the recombination process by efficient charge separation and charge accumulation at the interfaces. Dielectric studies also reveal reduced charge leakage in composite nanostructures with efficient charge separation by facilitating the charge accumulation at the interfaces. Overall, the efficient charge transfer and slow carrier recombination with reduced dielectric losses significantly improved the photocurrent behavior CsPbBr3/ZnO nanostructure composite system as desired for optoelectronic devices.
关键词： ZnO,charge transfer dynamics,optoelectronic applications,dielectric loss,photocurrent,Metal-halide based perovskites,CsPbBr3
更新于2025-09-23 15:21:01
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MOVPE of Large-Scale MoS <sub/>2</sub> /WS <sub/>2</sub> , WS <sub/>2</sub> /MoS <sub/>2</sub> , WS <sub/>2</sub> /Graphene and MoS <sub/>2</sub> /Graphene 2D-2D Heterostructures for Optoelectronic Applications
摘要： Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.
关键词： MOVPE,WS2,MoS2,heterostructures,2D materials,graphene,optoelectronic applications
更新于2025-09-23 15:19:57
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Scalable Synthesis of InAs Quantum Dots Mediated through Indium Redox Chemistry
摘要： Next-generation optoelectronic applications centered in the near-infrared (NIR) and short-wave infrared (SWIR) wavelength regimes require high-quality materials. Among these materials, colloidal InAs quantum dots (QDs) stand out as an infrared-active candidate material for biological imaging, lighting, and sensing applications. Despite significant development of their optical properties, the synthesis of InAs QDs still routinely relies on hazardous, commercially unavailable precursors. Herein, we describe a straightforward single hot injection procedure revolving around In(I)Cl as the key precursor. Acting as a simultaneous reducing agent and In source, In(I)Cl smoothly reacts with a tris(amino)arsenic precursor to yield colloidal InAs quantitatively and at gram scale. Tuning the reaction temperature produces InAs cores with a first excitonic absorption feature in the range of 700?1400 nm. A dynamic disproportionation equilibrium between In(I), In metal, and In(III) opens up additional flexibility in precursor selection. CdSe shell growth on the produced cores enhances their optical properties, furnishing particles with center emission wavelengths between 1000 and 1500 nm and narrow photoluminescence full-width at half-maximum (FWHM) of about 120 meV throughout. The simplicity, scalability, and tunability of the disclosed precursor platform are anticipated to inspire further research on In-based colloidal QDs.
关键词： colloidal synthesis,InAs quantum dots,short-wave infrared,optoelectronic applications,near-infrared
更新于2025-09-23 15:19:57
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New Triphenylamine-Based Oligomeric Schiff Bases Containing Tetraphenylsilane Moieties in the Backbone
摘要： Three new triphenylamine-based oligomeric Schiff bases (polySB1, polySB2 and polySB3) containing tetraphenylsilane core (TPS-core) in the main chain were obtained from TPS-core-based diamines and bis(4-formylphenyl)phenylamine by a high-temperature polycondensation reaction. These new oligomers were structurally characterized by FT-IR, NMR and elemental analysis. All polySBs were highly soluble in common organic solvents, such as chloroform, tetrahydrofuran and chlorobenzene. Samples showed moderate molecular average molecular weight (Mw) and a high thermal stability above 410 °C. Likewise, polySBs showed absorption near 400 nm in the UV-vis range and photoluminescence. The HOMO levels and band-gap values were found in the ranges of ?6.06 to ?6.18 eV and 2.65–2.72 eV, respectively. The lowest band-gap value was observed for polySB2, which could be attributed to a more effective π-conjugation across the main chain. The results suggest that silicon-containing polySBs are promising wide-band-gap semiconductors materials for optoelectronic applications.
关键词： optoelectronic applications,tetraphenylsilane,oligomeric Schiff bases,triphenylamine
更新于2025-09-19 17:15:36
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Solution-Processed Anatase Titania Nanowires: From Hyperbranched Design to Optoelectronic Applications
摘要： The utilization of solar energy and the development of its related optoelectronic devices have become more important than ever. Solar cells or photoelectrochemical (PEC) cells that require the design of light harvesting assemblies for efficiently converting solar light into electricity or solar fuels are of particular interest. Semiconductor TiO2, serving as the photoelectrode for photovoltaic devices (e.g., dye- or quantum dot-sensitized solar cells (DSSCs/QDSSCs) or perovskite solar cells (PSCs)) and PEC cells, has aroused intense research interest owing to its inherent characteristics of wide band gap and promising optical and electrical properties. TiO2 nanowires (TNWs) have been widely used in optoelectronic devices due to their unique 1D geometry and salient optical and electrical properties. However, the insufficient surface area resulting from the relatively large diameter of NWs and considerable free space between adjacent NWs restricts their optoelectronic performance. Hence, it is desirable to explore every feasible aspect of TNWs in terms of structural design and optical management, aiming to further improve the performance of optoelectronic devices. In this Account, we present a brief survey of strategies for designing branched or hyperbranched TNW-based photoelectrodes and their applications in solar cells and PEC cells. The general strategies (e.g., alkaline/acid hydrothermal method, lift-off transfer, and self-assembly approach) are discussed to address the challenges associated with fabricating TNWs on transparent conducting oxide (TCO) substrates. A series of strategies to fabricate judiciously designed 3D branched array architectures, including length tuning and sequential surface branched or hyperbranched modification, are proposed. The versatile implantation of the TNWs onto other backbones (nanosheets, nanotubes, hollow spheres, or multilayered electrodes) and substrates (fiber-shaped metal wire or mesh, flexible metal foil, or plastic sheet) is demonstrated to construct a new class of the TNW-embedded composite electrode materials with desired morphological characteristics and optoelectronic properties, for example, favorable energy level alignment for cascade charge transfer and rational homogeneous/heterogeneous interfacial engineering. The functionalities of TNW-based electrodes include enlarged surface area and superior light scattering for maximized light harvesting, as well as facilitated charge transport and suppressed charge recombination for enhanced charge collection, which are promising in optoelectronic fields such as solar cells, photocatalysis, and PEC cells. Beyond TNWs, one can also integrate other types of semiconductor (e.g., Fe2O3 or WO3) NWs into rationally designed structures for preparing novel photocatalytic materials with panchromatic absorption, efficient charge transfer, and excellent catalytic properties. Finally, an insightful perspective for rational design of advanced NW-based materials is provided.
关键词： Solar cells,Hyperbranched design,Anatase titania nanowires,Photoelectrochemical cells,Optoelectronic applications,Solution-processed
更新于2025-09-19 17:15:36
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Ultrafast Charge Carrier Dynamics and Nonlinear Optical Absorption of InP/ZnS Core-Shell Colloidal Quantum Dots
摘要： Understanding of ultrafast carrier dynamics in InP/ZnS colloidal quantum dots (QDs) is essential for their optoelectronic applications. In this paper, we have successfully fabricated high-quality InP/ZnS core-shell QDs with quantum yield (QY) of 47%. Time resolved photoluminescence (TRPL), femtosecond transient absorption (TAS) measurements were performed to characterize the carrier injection, relax and transition process in the InP/ZnS QDs. It is found that the photoexcited carrier first injected to ZnS shell in 2 ps, then relaxed to alloyed layer between ZnS shell and InP core in 7.4 ps, next relaxed to different energy levels in InP core in about 170 ps, finally recombined by charged and neutral excitons transition in 4.1 ns and 26.7 ns, respectively. Additionally, the two-photon absorption (TPA) coefficient obtained from Z-scan measurement indicates that InP/ZnS QDs possess good nonlinearly optical properties. Our research is significant for the improvement and engineering of InP/ZnS QDs based materials for optoelectronic applications.
关键词： quantum dots,InP/ZnS,ultrafast carrier dynamics,nonlinear optical absorption,optoelectronic applications
更新于2025-09-19 17:13:59
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Understanding Molecular Adsorption on CuSCN Surfaces Toward Perovskite Solar Cell Applications
摘要： CuSCN has been employed as the hole transporting material for solar cells and it is established to offer superior power conversion efficiencies and stabilities of the perovskite solar cell. In this manuscript, we carry out first principles calculations to understand the structures and properties CuSCN surfaces in the presence of small molecules that are common in the solution processable solar cells. The molecular adsorbates include additives, precursors and solvents to synthesize the halide perovskite solar cell components such as methylammonium iodide (MAI), lead iodide (PbI2), acetonitrile, chloroform, dimethylformamide (DMF), dimethylsulfoxide (DMSO), methanol and ethanol. The study suggests that the CuSCN surfaces interact with these additive molecules in various degrees and such adsorption is strongly dependent on the CuSCN surface directions. The presence of the PbI2 moiety leads to additional empty states inside the band gap of CuSCN. The presence of the molecular adsorbates impacts on the electronic and optical properties of the CuSCN surfaces, and further additive-based interfacial engineering approach of the perovskite/CuSCN system is called for. This study paves the way toward the fundamental understanding of the CuSCN surfaces toward optoelectronic applications.
关键词： perovskite solar cells,optoelectronic applications,CuSCN,molecular adsorption,first principles calculations
更新于2025-09-19 17:13:59