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Comment on a??Cooperative Behaviors in Amplified Emission from Single Microcrystals of Thiophene/Phenylene Coa??Oligomers toward Organic Polariton Lasera??
摘要： Yanagi et al. recently reviewed their progress in the field of amplified emission of thiophene/phenylene co-oligomers (TPCO) single crystals (Adv. Opt. Mater. 2019, 7, 1900136), which are a promising platform for highly efficient organic light-emitting devices. In this comment, the most intriguing experimental data from this paper are naturally and easily explained as an effect of unintentional impurities or molecular self-dopants that appear in the course of chemical synthesis of TPCO.
关键词： lasers,organic photoluminescence,thiophene/phenylene co-oligomers,molecular self-doping,organic optoelectronics
更新于2025-09-23 15:19:57
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Near full light absorption and full charge collection in 1-micron thick quantum dot photodetector using intercalated graphene monolayer electrodes
摘要： Quantum dots (QDs) offer several advantages in optoelectronics such as easy solution processing, strong light absorption and size tunable direct bandgap. However, their major limitation is their poor film mobility and short diffusion length (<250 nm). This has restricted the thickness of QD film to ～200–300 nm due to the restriction that the diffusion length imposes on film thickness in order to keep efficient charge collection. Such thin films result in a significant decrease in quantum efficiency for λ > 700 nm in QDs photodetector and photovoltaic devices, causing a reduced photoresponsivity and a poor absorption towards the near-infrared part of the sunlight spectrum. Herein, we demonstrate 1 μm thick QDs photodetectors with intercalated graphene charge collectors that avoid the significant drop of quantum efficiency towards λ > 700 nm observed in most QD optoelectronic devices. The 1 μm thick intercalated QD films ensure strong light absorption while keeping efficient charge extraction with a quantum efficiency of 90%–70% from λ = 600 nm to 950 nm using intercalated graphene layers as charge collectors with interspacing distance of 100 nm. We demonstrate that the effect of graphene on light absorption is minimal. We achieve a time-modulation response of <1 s. We demonstrate that this technology can be implemented on flexible PET substrates, showing 70% of the original performance after 1000 times bending test. This system provides a novel approach towards high-performance photodetection and high conversion photovoltaic efficiency with quantum dots and on flexible substrates.
关键词： Optoelectronics,Photodetectors,Quantum dots,Graphene,Flexible substrates
更新于2025-09-23 15:19:57
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[IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - Generation of Optical Combs based on Intensity Electro-Optic Modulators using a Differential Evolution Algorithm
摘要： Integrated photonics is a promising route toward high-performance next-generation ICT and sensing devices. Although fiber-packaging is perhaps the most widely discussed obstacle to low-cost photonic devices, electronic-photonic integration and thermal-stabilization are also significant design considerations that need to be properly managed. Using a state-of-the-art Si-photonic optical-network-unit as a worked example, we illustrate some key challenges and solutions in the field of photonic-packaging. Specifically, we describe a novel solder-reflow bonding process for the face-to-face three-dimensional (3-D) integration of photonic and electronic integrated circuits, discuss current and future multichannel fiber-alignment techniques, and investigate the coefficient-of-performance of the thermo-electric cooler that stabilizes the temperature of the photonic components. The challenge of photonic-packaging is to simultaneously satisfy these electrical, optical, and thermal design requirements on small-footprint devices, while establishing a route to scalable commercial implementation.
关键词： silicon photonics,Integrated optics,photonic packaging,optoelectronics
更新于2025-09-23 15:19:57
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Mercury Chalcogenide Nanoplateleta??Quantum Dot Heterostructures as a New Class of Continuously Tunable Bright Shortwave Infrared Emitters
摘要： Despite broad applications in imaging, energy conversion and telecommunications, there are few nanoscale moieties that emit light efficiently in the shortwave infrared (SWIR, 1000-2000 nm or 1.24-0.62 eV). We report quantum confined mercury chalcogenide (HgX, X=Se, Te) nanoplatelets (NPLs) can be induced to emit bright (QY >30%) and tunable (900-1500+ nm) infrared emission from attached quantum dot (QD) “defect” states. We demonstrate near unity energy transfer from NPL to these QDs, which completely quench NPL emission and emit with high QY through the SWIR. This QD defect emission is kinetically tunable, enabling controlled mid-gap emission from NPLs. Spectrally resolved photoluminescence demonstrates energy dependent lifetimes, with radiative rates 10-20 times faster than their PbX analogs in the same spectral window. Coupled with their high quantum yield, mid-gap emission HgX dots on HgX NPLs provides a potential platform for novel optoelectronics in the SWIR.
关键词： nanoplatelets,shortwave infrared,mercury chalcogenide,optoelectronics,quantum dots
更新于2025-09-23 15:19:57
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Single GaAs nanowire based photodetector fabricated by dielectrophoresis
摘要： Mechanical manipulation of nanowires (NWs) for their integration in electronics is still problematic because of their reduced dimensions, risking to produce mechanical damage to the NW structure and electronic properties during the assembly process. In this regard, contactless NW manipulation based methods using non-uniform electric fields, like dielectrophoresis (DEP) are usually much softer than mechanical methods, offering a less destructive alternative for integrating nanostructures in electronic devices. Here, we report a feasible and reproducible dielectrophoretic method to assemble single GaAs NWs (with radius 35–50 nm, and lengths 3–5 μm) on conductive electrodes layout with assembly yields above 90% per site, and alignment yields of 95%. The electrical characteristics of the dielectrophoretic contact formed between a GaAs NW and conductive electrodes have been measured, observing Schottky barrier like contacts. Our results also show the fast fabrication of diodes with rectifying characteristics due to the formation of a low-resistance contact between the Ga catalytic droplet at the tip of the NW when using Al doped ZnO as electrode. The current-voltage characteristics of a single Ga-terminated GaAs NW measured in dark and under illumination exhibit a strong sensitivity to visible light under forward bias conditions (around two orders of magnitude), mainly produced by a change on the series resistance of the device.
关键词： chemical beam epitaxy,optoelectronics,dielectrophoresis,nanowire assembly,GaAs nanowire photodetector,nanofabrication
更新于2025-09-23 15:19:57
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Monolithic Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions
摘要： In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS2 p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.
关键词： Contact engineering,Transition metal dichalcogenides,Heterostructures,Photovoltaics,2D semiconductors,Optoelectronics
更新于2025-09-23 15:19:57
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High-performance lateral MoS2-MoO3 heterojunction phototransistor enabled by in-situ chemical-oxidation; ??????????-|?°§????????oé????§è??MoS2-MoO3é?￠??????è′¨??? è′¨??????????????????;
摘要： Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors, which have great potential in the applications of next-generation integrated circuit and optoelectronic devices. Hence, a controlled and facile method to achieve p-n interface is desired. Molybdenum sulfide (MoS2) has shown promising potential as an atomic-layer n-type semiconductor in electronics and optoelectronics. Here, we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization process. The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior, with a maximum external quantum efficiency of ~650%, ~3.6 mA W?1 at 0 V, and a light switching ratio of ~102. The importance of the built-in p-n junction with such a high performance is further confirmed by high-resolution photocurrent mapping. Due to the high photoresponse at low source-drain voltage (VDS) and gate voltage (VG), the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic circuits. Our findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics, optoelectronics and CMOS logic circuits.
关键词： optoelectronics,lateral p-n junction,molybdenum disulfide,photocurrent
更新于2025-09-23 15:19:57
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Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes
摘要： Photodiodes and integrated optical receivers operating at 1.55 micrometer (μm) wavelength are crucial for long-haul communication and data transfer systems. In this paper, we report C-band InAs quantum dash (Qdash) waveguide photodiodes (PDs) with a record-low dark current of 5 pA, a responsivity of 0.26 A/W at 1.55 μm, and open eye diagrams up to 10 Gb/s. These Qdash-based PDs leverage the same epitaxial layers and processing steps as Qdash lasers and can thus be integrated with laser sources for power monitors or amplifiers for pre-amplified receivers, manifesting themselves as a promising alternative to their InGaAs and Ge counterparts in low-power optical communication links.
关键词： C-band communication,photodiodes,optoelectronics,low dark-current,quantum dashes
更新于2025-09-23 15:19:57
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[IEEE 2019 Fifth International Conference on Image Information Processing (ICIIP) - Shimla, India (2019.11.15-2019.11.17)] 2019 Fifth International Conference on Image Information Processing (ICIIP) - NFGS Enabled Face Re-identification for Efficient Surveillance in Low Quality Video
摘要： Integrated photonics is a promising route toward high-performance next-generation ICT and sensing devices. Although fiber-packaging is perhaps the most widely discussed obstacle to low-cost photonic devices, electronic-photonic integration and thermal-stabilization are also significant design considerations that need to be properly managed. Using a state-of-the-art Si-photonic optical-network-unit as a worked example, we illustrate some key challenges and solutions in the field of photonic-packaging. Specifically, we describe a novel solder-reflow bonding process for the face-to-face three-dimensional (3-D) integration of photonic and electronic integrated circuits, discuss current and future multichannel fiber-alignment techniques, and investigate the coefficient-of-performance of the thermo-electric cooler that stabilizes the temperature of the photonic components. The challenge of photonic-packaging is to simultaneously satisfy these electrical, optical, and thermal design requirements on small-footprint devices, while establishing a route to scalable commercial implementation.
关键词： silicon photonics,Integrated optics,photonic packaging,optoelectronics
更新于2025-09-23 15:19:57
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Pick and Place Distributed Feedback Lasers Using Organic Single Crystals
摘要： Organic single crystals are of interest for optoelectronic applications due to their highly ordered molecular stacking and small defect concentration, giving the possibility of high mobility and luminescence efficiency. To achieve lasing in large flat single crystals, a simple 'pick and place' method of mounting organic single crystals onto distributed feedback gratings is demonstrated. Efficient lasing is achieved with three kinds of active organic single crystals, indicating the potential for broad application of the method for making single crystal lasers using distributed feedback gratings. Detailed investigations of the anisotropic refractive index and waveguide simulations further confirm that distributed feedback can provide efficient ways of fabricating organic single crystal lasers.
关键词： organic semiconductor optoelectronics,solid-state lasers,optically pumped lasers
更新于2025-09-23 15:19:57