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Direct nanoscale mapping of open circuit voltages at local back surface fields for PERC solar cells
摘要： The open circuit voltage (VOC) is a critical and common indicator of solar cell performance as well as degradation, for panel down to lab-scale photovoltaics. Detecting VOC at the nanoscale is much more challenging, however, due to experimental limitations on spatial resolution, voltage resolution, and/or measurement times. Accordingly, an approach based on Conductive Atomic Force Microscopy is implemented to directly detect the local VOC, notably for monocrystalline Passivated Emitter Rear Contact (PERC) cells which are the most common industrial-scale solar panel technology in production worldwide. This is demonstrated with cross-sectioned monocrystalline PERC cells around the entire circumference of a poly-aluminum-silicide via through the rear emitter. The VOC maps reveal a local back surface ?eld extending * 2 lm into the underlying p-type Si absorber due to Al in-diffusion as designed. Such high spatial resolution methods for photovoltaic performance mapping are especially promising for directly visualizing the effects of processing parameters, as well as identifying signatures of degradation for silicon and other solar cell technologies.
关键词： solar cell,nanoscale,Conductive Atomic Force Microscopy,open circuit voltage,PERC cells
更新于2025-09-23 15:21:01
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Spray-Deposited Al <sub/>2</sub> O <sub/>3</sub> for Rear Passivation and Optical Trapping in Silicon Solar Cells
摘要： Low-cost spray deposition is employed to investigate the suitability of spray-deposited Al2O3 for rear passivation and optical trapping in passivated emitter rear contact (PERC) Si solar cells. Structural, optical, and electrical properties of spray-deposited Al2O3 ?lms are investigated. Capacitance-voltage measurements indicate that spray-deposited Al2O3 has a negative charge density of 3.19 × 1012 cm–2 for an 80-nm ?lm, suggesting that it can serve as the passivation layer. Optical properties of spray-deposited Al2O3 are identical to the Al2O3/SiNx stack prepared by atomic layer deposition and plasma-enhanced chemical vapor deposition, indicating that it can also serve as the optical trapping layer. Atomic force microscopy studies show that spray-deposited Al2O3 is crack and pore free, and its surface roughness has a root-mean-square value of 0.52 nm for an 80-nm ?lm. Spray-deposited Al2O3 is amorphous as determined by X-ray diffraction. X-ray photoelectron spectroscopy analysis suggests that spray-deposited Al2O3 is slightly Al-rich. The resistivity and breakdown ?eld of an 80-nm Al2O3 ?lm are 5.46 × 1014 Ω-cm and 3.28 MV/cm, respectively, which are stable after 800°C ?ring. These properties suggest that spray-deposited Al2O3 is a promising candidate to replace the Al2O3/SiNx stack in Si PERC cells.
关键词： Al2O3,spray deposition,rear passivation,Si PERC cells,optical trapping
更新于2025-09-12 10:27:22