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A broadband GaAs pHEMT low noise driving amplifier with current reuse and self-biasing technique
摘要： A K/Ka-band two-stage low noise driving ampli?er using a 0.15 lm GaAs pHEMT for low noise technology is designed and fabricated. In order to achieve broadband driving capability with low power consumption, current reuse technique is adopted to feed both transistors with the same DC power supply, which theoretically cuts the total current consumption in half. In addition, self-biasing technique is utilized to minimize both external power supply pads and chip footprint, which reduces the number of supply pads to a minimum of two (1 power pad and 1 ground pad). The circuit topology analysis and design procedures are also presented with an emphasis on noise ?gure and P1dB optimization. The low noise driving ampli?er demonstrates a - 3 dB bandwidth of wider than 11 GHz, a power gain of 17 dB, an in-band mean noise ?gure of 2.2 dB and an in-band mean output P1dB of 6 dBm. The DC power consumption is 9.1 mA@3.3 V power supply. The chip size is 1 mm 9 1.5 mm with only 1 external DC feed pad (3.3 V) and 1 ground pad (0 V). With the performance comparable to typical two-stage dual-bias low noise driving ampli?er counterparts, the proposed MMIC is more attractive to chip/system users in volume-limited and power-contrained applications.
关键词： Ka-band,Pseudomorphic high electron mobility transistor (pHEMT),GaAs,Low noise driving ampli?er,Monolithic microwave integrated circuit (MMIC)
更新于2025-09-19 17:15:36
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family
摘要： This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors’ 0.25 μm GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.
关键词： pseudomorphic high electron mobility transistor (pHEMT),X-Band,wideband amplifiers,high efficiency,Power Amplifier (PA),thermal analysis,EM simulation,monolithic microwave integrated circuit (MMIC)
更新于2025-09-04 15:30:14