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High efficient light-emitting diodes with improved the balance of electron and hole transfer via optimizing quantum dot structure
摘要： Modifying the structure of quantum dots (QDs) is regarded as one of the promising way to improve the charge transfer balance of quantum dot light-emitting diodes (QLEDs). In this paper, we report highly bright Cd0.1Zn0.9S/CdSe/CdS quantum dots by optimizing the CdSe shell and CdS outer shell and explore their application in QLEDs. We ?nd that with appropriate thicknesses of CdSe and CdS shell the charge transfer balance of the device can be improved. Comparable studies on two red QLEDs with Cd0.1Zn0.9S/CdSe/CdS and CdSe/CdS show that the external quantum e?ciency (EQE) of the Cd0.1Zn0.9S/CdSe/CdS device is over 3 folds higher than its counterpart, implying that structure of the QDs plays an important role in controlling the charge transfer balance of the QLEDs.
关键词： quantum dots,external quantum efficiency,QLEDs,charge transfer balance,Cd0.1Zn0.9S/CdSe/CdS
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 2nd International Conference on Electronics Technology (ICET) - Chengdu, China (2019.5.10-2019.5.13)] 2019 IEEE 2nd International Conference on Electronics Technology (ICET) - Efficient Top-emitting Quantum Dot Light Emitting Diodes via Inkjet Printing
摘要： In this work, we report inkjet-printed top-emitting (TE) quantum dot light emitting diodes (QLEDs) for achieving high-resolution QLED displays. At the luminance of 1000 cd/m2, the TE devices exhibit a current efficiency of 5.90 cd/A which is 2.7-fold higher than 2.18 cd/A of the conventional bottom-emitting (BE) devices. The significant enhancement is owing to the well-controlled cavity length which is easy for inkjet printing.
关键词： QLEDs,top-emitting structures,inkjet printing,coffee ring,Quantum dot
更新于2025-09-12 10:27:22
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Highly Efficient and Bright Inverted Top‐Emitting InP Quantum Dot Light‐Emitting Diodes Introducing a Hole‐Suppressing Interlayer
摘要： InP quantum dots (QDs) based light-emitting diodes (QLEDs) are considered as one of the most promising candidates as a substitute for the environmentally toxic Cd-based QLEDs for future displays. However, the device architecture of InP QLEDs is almost the same as the Cd-based QLEDs even though the properties of Cd-based and InP-based QDs are quite different in their energy levels and shapes. Thus, it is highly required to develop a proper device structure for InP-based QLEDs to improve the efficiency and stability. In this work, efficient, bright, and stable InP/ZnSeS QLEDs based on an inverted top emission QLED (ITQLED) structure by newly introducing a “hole-suppressing interlayer” are demonstrated. The green-emitting ITQLEDs with the hole-suppressing interlayer exhibit a maximum current efficiency of 15.1–21.6 cd A?1 and the maximum luminance of 17 400–38 800 cd m?2, which outperform the recently reported InP-based QLEDs. The operational lifetime is also increased when the hole-suppressing interlayer is adopted. These superb QLED performances originate not only from the enhanced light-outcoupling by the top emission structure but also from the improved electron–hole balance by introducing a hole-suppressing interlayer which can control the hole injection into QDs.
关键词： indium phosphide,top emitting structure,efficiency,quantum dot–based light emitting diodes (QLEDs),hole suppressing interlayer
更新于2025-09-12 10:27:22
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[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - High-Color-Purity Microfluidic Quantum Dots Light-Emitting Diodes Using the Electroluminescence of the Liquid Organic Semiconductor Backlight
摘要： We proposed microfluidic quantum dots light-emitting diodes using a liquid organic semiconductor (LOS) and quantum dots (QDs) solutions. LOS and QDs solutions were used as a backlight and a luminophore, respectively. Channels for the QDs solutions were stacked on the LOS backlight. With applying voltage, red photoluminescence (PL) emissions of the QDs solution excited by the LOS backlight, was observed. The full width at half maximum of the red-PL emission was 29.8 nm, which is narrower than that of the LOS backlight by 40%. The proposed device is expected to provide highly-bright flexible displays with high-color-purity.
关键词： liquid organic semiconductor (LOS),Liquid organic light-emitting diodes (OLEDs),high-color-purity,functional organic liquid,quantum dots light-emitting diodes (QLEDs)
更新于2025-09-11 14:15:04
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Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode
摘要： In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150°C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure.
关键词： microcavity,QLEDs,top-emission
更新于2025-09-11 14:15:04
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Exploring Electronic and Excitonic Processes Towards Efficient Deep Red CuInS2/ZnS Quantum-dot Light-emitting Diodes
摘要： The electroluminescence mechanisms in the Cd-free CuInS2/ZnS quantum-dot based light-emitting diodes (QLEDs) are systematically investigated through transient electroluminescence measurements. The results demonstrate that the characteristics of hole transporting layers (HTLs) determine the QLEDs to be activated by the direct charge-injection or the energy-transfer. Moreover, both the energy level alignment between HTL and quantum dot and the carrier mobility properties of the HTLs are critical factors to affect the device performance. By choosing suitable HTL, such as 4,4'-bis(9-carbazolyl)-2,2'-biphenyl, highly efficient deep red (emission peak at ~650 nm) CuInS2/ZnS QLEDs based on single HTL can be obtained with peak current efficiency and luminance of ~2.0 cd/A and nearby 3000 cd/m2, respectively.
关键词： energy transfer,charge injection,hole-transport layer,QLEDs,electron leakage,charge accumulation
更新于2025-09-11 14:15:04
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2.1: Highly Efficient Quantum-dot Light Emitting Diodes with Metal-oxide Transport Layer
摘要： Metal doped ZnO material is introduced in this study for highly efficient quantum-dot light-emitting diode. Compare to ZnO used as electron transporting layer (ETL), the metal doped ZnO ETL based inverted green quantum-dot light emitting diodes (G-QLEDs) exhibit the high efficiency with 49.2 cd/A and 49.8 lm/W for maximum current and power efficiencies, respectively, which is much higher than that of ZnO ETL based one.
关键词： Quantum-dots,Electron transporting layer,QLEDs,High efficiency QLEDs
更新于2025-09-10 09:29:36