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Radiation-Induced Effects on Fiber Bragg Gratings inscribed in Highly Birefringent Photonic Crystal Fiber
摘要： The Fiber Bragg Gratings (FBGs) inside Photonic Crystal Fibers having high fiber birefringence, such as in PCF with butterfly shape microstructure, are characterized by two Bragg peaks. The spectral distance between these two peaks is not affected by a change of temperature or by a longitudinally applied strain, but this spectral separation evolves when the sensor is subjected to a transversal strain. This makes such FBGs inscribed in highly birefringent PCFs very interesting for structural health monitoring of civil structures, as well as for operation in harsh environments such as the ones associated with the nuclear industry. In this work, we monitor the Radiation-Induced Bragg Wavelength Shift (RI-BWS) of the punctual sensor and the Radiation-Induced Attenuation (RIA) in the fiber used for its inscription up to a dose of 1.5 MGy(SiO2). Even if we observe a RI-BWS for both Bragg peaks, the spectral distance between them only slightly evolves, of less than 10 pm. These gratings are then very promising sensors for the structural health monitoring of nuclear facilities.
关键词： radiation effects,Fiber Bragg Grating,pressure sensors,Photonic Crystal Fiber
更新于2025-09-09 09:28:46
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The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes
摘要： To observe the neutron transmutation and displacement damage effects, Au/n-Si/Ag Schottky barrier diodes were exposed to thermal neutron irradiation. Irradiation induced changes in Schottky barrier height, saturation current, and donor concentration were investigated by using current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diodes. The irradiation for 10 s caused a little change in the Schottky diode parameters which were obtained from I-Vand C-V measurements. Observable changes in the parameters occurred after the second irradiation of 30 s duration. After the total dose, an increase in saturation current and barrier height inhomogeneties took into place and a decrease in carrier concentration was observed due to the carrier removal effect of thermal neutron-induced damages. Whereas the values of zero bias barrier height have little change after irradiations, the values of ideality factor increased after irradiations. The values of zero-bias barrier height for all diodes was also calculated from reverse bias current characteristics. After second dose, the values of zero-bias barrier height decreased for all diodes. The values of series resistance were determined by Cheung functions before and after irradiations. Before irradiations, the values were found between 2.10 kΩ and 2.76 kΩ. After second dose, the values of series resistance of all diodes decreased and were found between 1.59 kΩ and 2.20 kΩ. Furthermore, the proof of thermal neutron transmu- tation of elements in the devices was given via energy dispersive spectroscopy (EDS) mapping.
关键词： Semiconductor device radiation effects,Schottky diode,Electrical characterization,EDS mapping,Silicon,Thermal neutron irradiation
更新于2025-09-04 15:30:14