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Highly Efficient Copper-Rich Chalcopyrite Solar Cells from DMF Molecular Solution
摘要： Theoretical calculation suggests Cu-rich chalcopyrite absorbers contain less defects and have potential to achieve better performance than Cu-poor absorbers. However, this has not been demonstrated due to the detrimental Cu2-xSe impurity remaining in the absorber. Here, we report highly efficient Cu-rich chalcopyrite solar cells by selenizing dimethylformamide molecular precursor solution processed precursor films under high Ar pressure. Characterizations using XRD, Raman, SEM, TEM, c-AFM, PL, and glow discharge optical emission spectroscopy (GDOES) show high pressure selenization enables high quality Cu-rich chalcopyrite absorber materials with stoichiometric composition, smooth surface, high conductivity, and Cu2-xSe free grain boundaries, leading to efficient CuIn(S,Se)2 and Cu(In,Ga)(S,Se)2 devices with power conversion efficiency of 14.5% and 15.2%, both are the best performing chalcopyrite solar cells from non-hydrazine solutions. Our results demonstrate high Ar pressure selenization is a new strategy to fabricate high quality Cu-rich absorber which has great potential to further improve chalcopyrite solar cell efficiency.
关键词： Cu-rich,chalcopyrite,selenization,CIGS,DMF,high pressure
更新于2025-09-12 10:27:22
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CuZnSn(SxSe1-x)4 Solar Cell Prepared by the Sol-Gel Method Following a Modified Three-Step Selenization Process
摘要： In current work, Cu2ZnSn(S,Se)4 thin films have been prepared by the sol-gel method based on dimethyl sulfoxide solution followed by a modified three-step selenization process. The key process of this method is to divide the Se evaporation and annealing into two different stages: employ a thermal cracking Se source in the Se evaporation stage and an above-atmospheric pressure in the annealing process. The morphological, structural, elemental distributional, and photovoltaic properties of Cu2ZnSn(S,Se)4 thin films prepared with the three-step selenization process were systematically investigated. It was found that through this modified selenization process, the formations of secondary phases (ZnSe, CuSnSe3) and a fine-grain bottom layer, which usually exists in the traditional one-step selenization process, were effectively suppressed. These improvements could further reduce the carrier recombination and improve the solar cell performance. The best solar cell is obtained with a short-circuit current density of 28.16 mA/cm2, open-circuit voltage of 404.91 mV, fill factor of 62.91%, and a power conversion efficiency of 7.17% under air mass 1.5 (100 mW/cm2) illumination.
关键词： selenization,thermal cracking Se,CZTSSe solar cell,secondary phases,sol-gel method,above-atmospheric pressure
更新于2025-09-11 14:15:04
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Selenization of (Cu, In, Ga)/Se/Mo/Glass Thin Films: A Real-Time Synchrotron X-ray Scattering Study
摘要： The precursor selenization of (Cu, In, Ga)/Se/Mo/glass thin films during annealing without additional supply of Se was studied through a real-time synchrotron X-ray scattering experiment. At a lower temperature, the crystalline CIS, Cu2In, In2Se3, and Ga2Se3 phases were formed. By increasing the temperature, some parts of the crystalline CIS phase decomposed into Cu2In and In2Se3 phases. At a higher temperature, the crystalline CIGS phase was synthesized gradually by the reaction of the crystalline Cu2In, In2Se3, and Ga2Se3 phases, and not by direct crystallization of the amorphous precursor. The behavior of the integrated intensities and the crystal domain sizes were consistent with the changes in X-ray powder diffraction profiles. The high synthesis temperature in the CIGS phase was attributed to the high activation energy barrier for diffusion of Ga ions in the crystalline Ga2Se3 phase.
关键词： Real-Time Synchrotron X-ray Scattering,Synthesis of the CIGS Phase,Selenization During Annealing,(Cu, In, Ga)/Se/Mo/Glass Thin Films
更新于2025-09-09 09:28:46
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Uniform Selenization of Crack-Free Films of Cu(In,Ga)Se2 Nanocrystals
摘要： Crack-free films of Cu(In,Ga)Se2 (CIGS) nanocrystals were deposited with uniform thickness (>1μm) on Mo-coated glass substrates using an ink-based, automated ultrasonic spray process, then selenized and incorporated into photovoltaic devices (PVs). The device performance depended strongly on the homogeneity of the selenized films. Cracks in the spray-deposited films resulted in uneven selenization rates and sintering by creating paths for rapid, uncontrollable selenium (Se) vapor penetration. To make crack-free films, the nanocrystals had to be completely coated with capping ligands in the ink. The selenization rate of crack-free films then depended on the thickness of the nanocrystal layer, the temperature, and duration of Se vapor exposure. Either inadequate or excessive Se exposure leads to poor device performance, generating films that were either partially sintered or exhibited significant accumulation of selenium. The deposition of uniform nanocrystal films is expected to be important for a variety of electronic and optoelectronic device applications.
关键词： Nanocrystals,Selenization,Copper Indium Gallium Selenide,CIGS,Photovoltaics
更新于2025-09-09 09:28:46