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Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering
摘要： A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films with (002) preferred orientation. Pt/ZnO/Pt and Pt/Cr doped ZnO/Pt Schottky diodes were fabricated for photodetection studies. The Schottky barrier height was lowered for Cr doped ZnO film as compared to ZnO film. The ideality factor was improved upon Cr doping. Pt/ZnO/Pt diode was unresponsive to visible light, however, Pt/Cr doped ZnO/Pt diode showed response to visible light with short response and recovery times. The response of the Pt/Cr doped ZnO/Pt diodes to visible light is attributed to the reduction in band gap of the Cr doped ZnO thin film.
关键词： Thin films,Schottky contact,Chromium-doped Zinc oxide,Sputtering,Photodetectors
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP) - Hiroshima (2018.5.27-2018.6.1)] 2018 IEEE ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP) - Domain Switching by Applied Electric Field in (001) and (111)-epitaxial (K<inf>0.5</inf>Na<inf>0.5</inf>)NbO<inf>3</inf>Films
摘要： (K1-xNax)NbO3 (KNN) is especially paid attention to as a lead-free piezoelectric material. It is known that KNN has a morphotropic phase boundary (MPB) at x ~ 0.5, which shows a high piezoelectric property. However, it has not been fully clarified how the domain structure of KNN changes by applied electric field. In this study, we observed electric field-induced strain and domain fraction change of KNN films by synchrotron X-ray diffraction.
关键词： Na)NbO3,domain switching,films,(K
更新于2025-09-23 15:23:52
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Effect of gas mixing ratio on structural characteristics of titanium dioxide nanostructures synthesized by DC reactive magnetron sputtering
摘要： In this work, high-quality and highly pure titanium dioxide nanostructures were synthesized by a homemade dc closed-field unbalanced reactive magnetron sputtering system. The operation parameters of the magnetron sputtering system were optimized to prepare TiO2 nanostructures as thin films on glass substrates. These nanostructures were characterized by x-ray diffraction, atomic force microscopy and Fourier-transform infrared spectroscopy. Both anatase and rutile phases were identified. The mixing ratio of argon and oxygen (Ar:O2) gases was found very important to control the structural characteristics of the prepared nanostructures.
关键词： Nanostructures,Reactive sputtering,Titanium dioxide,Thin films
更新于2025-09-23 15:23:52
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[IEEE 2018 20th International Conference on Transparent Optical Networks (ICTON) - Bucharest (2018.7.1-2018.7.5)] 2018 20th International Conference on Transparent Optical Networks (ICTON) - Thin Films of Barium Strontium Titanate from the Viewpoint of Light-Based Applications
摘要： In this paper we report results from optical transmittance spectroscopy complemented with data on structure from XRD measurements to determine optical properties of a series of as-deposited and annealed (at 900 °C) BaSrTiO3 (BST) thin films deposited by RF magnetron sputtering. The members of the series differ by the substrate temperature and additional oxygen to accompany argon in the deposition chamber. The perovskite structure with weak preferred (110) orientation was detected for annealed BST thin films whilst the as-deposited films were amorphous. Dispersive optical properties – refractive indices, absorption coefficients and optical band gaps were determined from transmittance spectra. After annealing refractive indices increase to prove the densification of material accompanied by the thickness shrinkage. Optical band gaps calculated either by Tauc procedure or determined as iso-absorption levels are also found to be deposition dependent.
关键词： absorption coefficient,thin films,barium strontium titanate,refractive index,optical band gap
更新于2025-09-23 15:23:52
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Atomic layer deposition of ultrathin indium oxide and indium tin oxide films using a trimethylindium, tetrakis(dimethylamino)tin, and ozone precursor system
摘要： Indium oxide (IO) and indium tin oxide (ITO) are widely used in optoelectronics applications as a high quality transparent conducting oxide layer. A potential application of these coatings is for enhancing the electrical properties of spacecraft thermal radiator coatings, where dissipating built-up static charge is crucial. In this work, the authors investigated the thickness-dependent electrical and optical properties of IO thin films synthesized by atomic layer deposition (ALD) with the aim of finding the optimum condition for coating radiator pigments. Trimethylindium and ozone were used as precursors for IO, while a tetrakis(dimethylamino)tin(IV) source was used for Sn doping to produce ITO. As-deposited IO films prepared at 140 °C resulted in a growth per cycle of ~0.46 ?/cycle and film resistivity as low as 1.4 × 10^{-3} Ω cm. For the case of ITO thin films, an ALD process supercycle consisting of 1 Sn + 19 In cycles is shown to provide the optimum level of Sn doping corresponding to 10 wt. % widely reported in the literature.
关键词： atomic layer deposition,indium oxide,optoelectronics,transparent conducting oxides,thin films,indium tin oxide
更新于2025-09-23 15:23:52
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MoS <sub/>2</sub> thin films from a (N <i> <sup>t</sup></i> Bu) <sub/>2</sub> (NMe <sub/>2</sub> ) <sub/>2</sub> Mo and 1-propanethiol atomic layer deposition process
摘要： Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend themselves to the scalable and controllable formation of TMD films on surfaces are desirable for high volume manufacturing of devices based on these materials. The authors have developed a new thermal atomic layer deposition process using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol to produce MoS2-containing amorphous films. They observe a self-limiting reaction behavior with respect to both the Mo and S precursors at a substrate temperature of 350 °C. Film thickness scales linearly with precursor cycling, with growth per cycle values of ≈0.1 nm/cycle. As-deposited films are smooth and contain nitrogen and carbon impurities attributed to poor ligand elimination from the Mo source. Upon high-temperature annealing, a large portion of the impurities are removed, and the authors obtain few-layer crystalline 2H-MoS2 films.
关键词： atomic layer deposition,MoS2,thin films,transition metal dichalcogenides,annealing,precursors
更新于2025-09-23 15:23:52
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Atomic layer deposition of cobalt(II) oxide thin films from Co(BTSA) <sub/>2</sub> (THF) and H <sub/>2</sub> O
摘要： In this work, we have studied the applicability of Co(BTSA)2(THF) [BTSA = bis(trimethylsilyl)amido] (THF = tetrahydrofuran) in atomic layer deposition (ALD) of cobalt oxide thin films. When adducted with THF, the resulting Co(BTSA)2(THF) showed good volatility and could be evaporated at 55 °C, which enabled film deposition in the temperature range of 75–250 °C. Water was used as the coreactant, which led to the formation of Co(II) oxide films. The saturative growth mode characteristic to ALD was confirmed with respect to both precursors at deposition temperatures of 100 and 200 °C. According to grazing incidence x-ray diffraction measurements, the films contain both cubic rock salt and hexagonal wurtzite phases of CoO. X-ray photoelectron spectroscopy measurements confirmed that the primary oxidation state of cobalt in the films is +2. The film composition was analyzed using time-of-flight elastic recoil detection analysis, which revealed the main impurities in the films to be H and Si. The Si impurities originate from the BTSA ligand and increased with increasing deposition temperature, which indicates that Co(BTSA)2(THF) is best suited for low-temperature deposition. To gain insight into the surface chemistry of the deposition process, an in situ reaction mechanism study was conducted using quadrupole mass spectroscopy and quartz crystal microbalance techniques. Based on the in situ experiments, it can be concluded that film growth occurs via a ligand exchange mechanism.
关键词： atomic layer deposition,reaction mechanism,thin films,Co(BTSA)2(THF),cobalt oxide,water
更新于2025-09-23 15:23:52
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Structural, electrical, optical and thermoelectric properties of e-beam evaporated Bi-rich Bi2Te3 thin films
摘要： Bi-rich Bi2Te3 thin films are prepared at 300 K using e-beam evaporation technique. A source power of 45 W for e-beam was used. Post deposition, these as-deposited Bi-rich Bi2Te3 (Bi-BT-AD) films are annealed at 100 °C (Bi-BT-100), 200 °C (Bi-BT-200) and 300 °C (Bi-BT-300) for 1 h under a pressure of 3 × 10-4 Pa. X-ray diffraction measurements reveal the presence of Bi phase together with crystalline Bi2Te3 indicating the possible presence of Bi-rich Bi2Te3 phase in the Bi-BT-AD film. The broad peaks from Bi2Te3 (015) plane indicates nanocrystalline nature of particles. With annealing, no change in diffraction pattern is observed for Bi-BT-100. However, Bi-BT-200 and Bi-BT-300 films show the emergence of x-ray reflection from unknown phases around 2θ ~ 20° and 47°. This indicates Bi related secondary phase segregation and the thermodynamic instability for the presence of Bi in Bi2Te3 lattice. From Raman studies it is discerned that Bi secondary phase coexist along with the Bi-rich Bi2Te3 nanocrystalline grains. On vacuum annealing Bi-rich Bi2Te3 thin films prevails as evidenced from the p-type electrical characteristics, while excess Bi disappears and converts into an unknown minor phase. The resistivity of all the annealed films are ~ 0.9 × 10-4 Ωcm. The Seebeck coefficients also do not show any change and remain around 33 to 36 μV/K. Thermoelectric properties of Bi-BT-100 exhibit high power factors when measured at different ΔT with a maximum of ~ 17.5 × 10-4 W/K2m for ΔT=100 °C. Thus, unlike the near-stoichiometric thin films, Bi-rich thin films require low temperature annealing (~100 °C) to achieve optimized parameters. Bi-rich Bi2Te3 thin films also show higher power factor compared to the near-stoichiometric thin films. Thus, favourable thermoelectric properties can be achieved at 300 K for temperature sensitive device fabrication using Bi-rich Bi2Te3 thin films.
关键词： Bismuth-rich bismuth telluride,thin films,electron-beam evaporation,power factor.
更新于2025-09-23 15:23:52
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Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO <sub/>2</sub> -Based Thin-Film Transistor Devices
摘要： A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films at low temperatures down to 60 °C employing tetrakis-(dimethylamino)propyl tin(IV) [Sn(DMP)4] and oxygen plasma is demonstrated. The liquid precursor has been synthesized and thoroughly characterized with thermogravimetric analyses, revealing sufficient volatility and long-term thermal stability. [Sn(DMP)4] demonstrates typical saturation behavior and constant growth rates of 0.27 or 0.42 ? cycle?1 at 150 and 60 °C, respectively, in PEALD experiments. Within the ALD regime, the films are smooth, uniform, and of high purity. On the basis of these promising features, the PEALD process was optimized wherein a 6 nm thick tin oxide channel material layer deposited at 60 °C was applied in bottom-contact bottom-gate thin-film transistors, showing a remarkable on/off ratio of 107 and field-effect mobility of ≈ 12 cm2 V?1 s?1 for the as-deposited thin films deposited at such low temperatures.
关键词： thin-film transistors,tin(IV) oxide,thin films,precursors,atomic layer deposition
更新于2025-09-23 15:23:52
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Influence of Synthesis Conditions on Microstructure and NO2 Sensing Properties of WO3 Porous Films Synthesized by Non-Hydrolytic Sol–Gel Method
摘要： Nanostructured tungsten trioxide porous films were prepared by a non-hydrolytic sol–gel method following the inorganic route in which ethanol and PEG were used as the oxygen-donor and structure-directing reagent, respectively. The effects of aging time of the precursor solution, PEG content, and calcination temperature on the structure, morphology, and NO2 sensing properties of WO3 films were systematically investigated by using the techniques of X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, and gas sensing measurements. The results demonstrated that a series of WO3 films with different microstructures could be obtained by manipulating the synthesis parameters. Furthermore, a suitable synthesis condition of WO3 films for NO2 sensing application was determined.
关键词： NO2,non-hydrolytic sol–gel,WO3,gas sensing,porous films
更新于2025-09-23 15:23:52