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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • gate oxide integrity
  • avalanche ruggedness
  • SiC MOSFET
  • bias temperature instability
应用领域
  • Electronic Science and Technology
机构单位
189 条数据
?? 中文（中国） ▾

  • How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi-Stack

    摘要： This paper reports on the successful elaboration of fully (100) oriented SiC/Si/SiC/Si multi-stack using chemical vapor deposition. Si(100) heteroepitaxy on 3C-SiC(100) is identified as the critical step which is solved by pulse insertion of precursors during cooling. It lead to the roughening of the 3C-SiC surface which in turn lead to the quasi-exclusive nucleation of (100) oriented islands at the expanse of (110) ones. Subsequent Si epitaxy on such modified surface allows growing fully (100) oriented Si layer, as confirmed by structural characterization of the layers. The 3C-SiC grown on top of such Si(100) layer is again of (100) orientation, forming thus a fully (100) oriented stack. Due to the high lattice mismatch, each interface of the stack is characterized by a high density of crystalline defects which are shown to recombine along with thickness. Antiphase domains present inside the 3C-SiC seed are shown to have no detrimental influence on the Si layer quality. Without the surface modification step, the Si layers grown on 3C-SiC are always polycrystalline with a mixture of (110) and (100) orientations.

    关键词： CVD,3C-SiC,surface modification,multilayers,Si heteroepitaxy

    更新于2025-09-19 17:15:36

  • [IEEE 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Shenzhen, China (2018.10.23-2018.10.25)] 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Threshold Voltage Instability of 1200V SiC MOSFET Devices

    摘要： 1200V 4H-SiC MOSFETs have been designed and fabricated sucessfully. The drain current Id = 20 A at Vg = 20 V, corresponding to Vd = 2.0 V. The stability of threshold voltage was studied soon. It is believed that the instability in device behavior during gate bias stress is due to capture of electrons by the SiC/gate dielectric interface traps and the gate dielectric near interface traps. A constant gate voltage of +20V/-10V is applied to the gate at a temperature of 150℃. The threshold voltage are monitored for device stability. Compare with three other commercial devices,the devices show little variation in the Vth.

    关键词： threshold voltage,SiC MOSFET,interface states

    更新于2025-09-19 17:15:36

  • Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes

    摘要： We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) with positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.

    关键词： 4H-SiC,single photon counting,passive quenching,Geiger mode,avalanche photodiodes,breakdown voltage

    更新于2025-09-19 17:15:36

  • Highly Efficient, Full ZVS, Hybrid, Multilevel DC/DC Topology for Two-Stage Grid-Connected 1500V PV System with Employed 900V SiC Devices

    摘要： Highly ef?cient, hybrid DC/DC topology, consisted of a standard interleaved boost followed by a multilevel RSCC (Resonant Switched Capacitor Converter), that employs 900V SiC (Silicon-Carbide) devices, for use in emerging, two-stage, grid connected 1500V PV (Photo-Voltaic) systems is presented in this paper. Operation principle of this topology, controllability of the output voltage and power distribution among the stages in function of the input voltage is described. Partial processing of the input energy and full ZVS (Zero Voltage Switching) transitions in all the switches, over the wide range of input voltages and output power, make this topology more ef?cient in the comparison with the solutions presented in literature. Simpli?ed model of Coss for prediction of ZVS conditions in high voltage applications is presented. This model appears suf?ciently accurate, yet is also simple enough to be included in the optimization program without increasing the time consumption of calculations. Results of multivariable optimization (pareto front) for the presented topology are provided. Previousely described theoretical analysis is fully experimentally con?rmed by building and measuring a 10kW prototype of 8.26kW/kg of speci?c power and 404.6cm3 of volume occupied only by the power stage components. Euro ef?ciency of 99.48% in nominal input/output voltage conditions is achieved.

    关键词： Multilevel,DC/DC,SiC,RSCC,ZVS,1500V Photo-voltaic

    更新于2025-09-19 17:15:36

  • Irradiation effects of swift heavy ions on palladium films deposited on 6H-SiC substrate

    摘要： The irradiation effect of swift heavy ions on palladium (Pd) films deposited on 6H-SiC was investigated. The samples were irradiated by Xe26+ ions with the energy of 167 MeV at fluences of 1 × 1013 cm?2 and 3 × 1014 cm?2 at room temperature. Phase identification, residual stress and surface morphology were investigated with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results showed that the as-deposited sample was composed of Pd and SiC with no evidence of a reaction between Pd and SiC. No reaction was observed for the lower irradiation fluence, only an increase in the Pd peak intensities was observed indicating improvement in the crystallinity of the material. A reaction between Pd and SiC forming PdSi and Pd2Si was observed after irradiation at a fluence of 3 × 1014 cm?2. The stress measurements indicated that the films were having tensile and biaxial stress not exceeding 200 MPa. A decrease in stress values was observed with an increase in irradiation fluence. The surface morphology of the as-deposited was flat and composed of small granules. There was an increase in granule sizes due to irradiation at 1 × 1013 cm?2. Irradiating at 3 × 1014 cm?2 caused grain agglomeration and clustering.

    关键词： Palladium,SiC,Swift heavy ions,Stress,Irradiation

    更新于2025-09-19 17:15:36

  • Fabrication of an Ultra-Thick-Oriented 3C-SiC Coating on the Inner Surface of a Graphite Tube by HHH-CVD

    摘要： Cubic SiC (3C-SiC) is a promising material for nuclear industry applications due to its excellent properties. In this report, a highly oriented thick 3C-SiC coating with good crystallinity was prepared on the inner surface of a monolithic graphite tube via high-frequency induction-heated halide chemical vapor deposition (HHH-CVD) using SiCl4, CH4, and H2 as precursors. The texture coefficient (TC(hkl)), microstructure, and deposition rate along the tube axis was studied. 3C-SiC coating with a high (111) orientation and crystallinity was obtained. Along the tube axis, TC(111) was consistent with the temperature distribution. The surficial morphology of the 3C-SiC coating changed from pebble-like to hexangular facet and then to hemispherical. The deposition rate and coating thickness were 300 μm/h and 615 μm, respectively, which is sufficiently rapid and thick enough to obtain free-standing SiC tubes for nuclear reactors.

    关键词： microstructure,orientation,3C-SiC coating,HHH-CVD

    更新于2025-09-19 17:15:36

  • Structure and Phase Evolution in a SiC Ceramic Surface Layer During Electron-Beam Treatment

    摘要： The elemental and phase compositions and substructure changes in the surface layer of SiC ceramic irradiated by pulsed electron beams of variable intensity were investigated. The structure and phase state of the ceramic surface layer were shown to be controlled by the electron-beam parameters. The electron-beam irradiation regimes leading to nanostructure detection in the SiC-ceramic surface layer were determined.

    关键词： surface layer,electron beam,polytypes,SiC ceramic

    更新于2025-09-19 17:15:36

  • Nonstoichiometric amorphous silicon carbide films as promising antireflection and protective coatings for germanium in IR spectral range

    摘要： A technology for preparation of amorphous nonstoichiometric hydrogenated silicon carbide (a-SixC1-x:H) films using the PE-CVD method has been developed. Such films with refractive index n = 1.8–2.1 are suitable to obtain antireflection effect on germanium in the IR spectral region. Single- and two-sided antireflection coatings of Ge enabled to increase its optical transmission up to 65% and 96% in the maximum transmission, respectively. The obtained films have good mechanical properties (H > 12 GPa, E = 100 GPa). Presence of Si-C bonds in the a-SixC1-x:H films restricts their range of application to the spectral interval 2.5–10 μm. The prepared films are uniform in composition and have high adhesion to the substrate. Variation of deposition conditions makes it possible to obtain a-SixC1-x:H films having high hardness and Young's modulus. High deposition rate, optimal optical properties of the a-SixC1-x:H films and good combination of mechanical properties for the Ge/a-SixC1-x:H film structures make them to be promising for practical application as antireflection and protective coatings for germanium.

    关键词： Germanium,Antireflection coatings,Elements of IR optics,Nonstoichiometric SiC films

    更新于2025-09-19 17:15:36

  • Tuning the electronic properties of van der Waals heterostructures composed of black phosphorus and graphitic SiC

    摘要： This study presents a new van der Waals (vdW) heterostructure composed of monolayer black phosphorus (BP) and monolayer graphitic SiC (g-SiC). Using first-principles calculations, the structural and electronic properties of the BP/SiC heterostructure were investigated. It was found that by stacking BP with SiC, weak type-I band alignment can be achieved with a band gap of 0.705 eV, where the direct band gap as well as linear dichroism features were well preserved. The electrostatic potential drop in the heterojunction was calculated to be 4.044 eV. By applying perpendicular electric field, the band alignment can be altered to either type-I or type-II, and the band gap can be effectively controlled by field intensity, hence making the heterostructure suitable for various applications.

    关键词： first-principles calculations,van der Waals heterostructure,graphitic SiC,electronic properties,black phosphorus

    更新于2025-09-19 17:15:36

  • Enhanced photocatalytic activity of SiC modified by BiVO <sub/>4</sub> under visible light irradiation

    摘要： SiC-BiVO4-P and SiC-BiVO4-H composites have been prepared by precipitation method and hydrothermal method, respectively. Rod-like BiVO4 particles dispersed on the surface of micro-sized SiC particles homogeneously in SiC-BiVO4-H. Due to the formed heterostructure between BiVO4 and SiC, photo-generated electrons and holes were effectively separated. Under visible light irradiation, SiC-BiVO4-H exhibited the best performance for photocatalytic oxidation of Rhodamine B, achieved about 7.5 times improvement in photocatalytic degradation rate constants compared with that of the pristine SiC powder. The possible photocatalysis mechanism of SiC/BiVO4 related to the band positions of the semiconductors under visible light irradiation was also discussed in detail. In addition, the radicals trapping experiments revealed that all three radicals (holes, OH, and O2-) play an important role in the Rhodamine B degradation.

    关键词： SiC,BiVO4,RhB,heterostructure,visible light

    更新于2025-09-19 17:15:36