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Enhanced Thermochromic Properties of Vanadium Dioxide (VO2)/Glass Heterostructure by Inserting a Zr-Based Thin Film Metallic Glasses (Cu50Zr50) Buffer Layer
摘要： Vanadium dioxide (VO2) with reversible metal–insulator transition (MIT) is one of the most promising energy-efficient materials. Especially for VO2-based smart windows, the visible transmittance and solar modulation ability are the most critical parameters. However, VO2 thin films that are directly deposited onto glass substrates are of poor crystallinity and MIT performance, limiting the practical applications of VO2/glass heterostructures. In this paper, a buffer layer of Cu50Zr50 was introduced to build a novel Zr-based thin film metallic glass (VO2/Cu50Zr50/glass) with multilayer structures for thermochromic applications. It is observed that the insertion of a Cu50Zr50 buffer layer with appropriate thickness results in a clear enhancement of crystalline quality and MIT performance in the VO2/Cu50Zr50/glass thin films, compared with the single-layer VO2/glass thin films. Moreover, the VO2/Cu50Zr50/glass bi-layer films exhibit better optical performance with enhanced solar modulation ability (?Tsol = 14.3%) and a high visible transmittance (Tvis = 52.3%), which represents a good balance between ?Tsol and Tvis for smart window applications.
关键词： Cu50Zr50 buffer layers,metal–insulator transition,vanadium dioxide thin film,thermochromic property,smart window
更新于2025-09-10 09:29:36
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Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy
摘要： Indium-gallium-zinc-oxide thin-film transistors (TFTs) gated with solution-processed, ultra-thin AlxOy have been fabricated on a plastic substrate. The effects of bending on the gate dielectric leakage current density and capacitance density have been studied. The devices show a low operating voltage of less than 1 V, a high current on/off ratio > 105 and a low subthreshold swing < 90 mV/dec. The devices maintain their high performance even when flexed to a curvature radius of 11 mm. As a result, such devices possess a great potential for low-power, flexible electronics.
关键词： 1 V operation,thin-film transistors (TFTs),plastic substrate,Indium-gallium-zinc-oxide
更新于2025-09-10 09:29:36
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Ionic Conduction Response under Extending-Deformation of β-AgI Thin Films
摘要： Tensile stress was applied to β-AgI thin film prepared on a polyethylene terephthalate film, and the ion conduction response in the direction of the tensile extension was investigated. The ionic conductivity of the β-AgI thin film decreases and the activation energy for ionic conduction increases with increasing extension ratio. This behaviour is attributed to the modulation of the crystal framework by the extension of the AgI thin film.
关键词： conductivity,thin film,extending-deformation,beta-AgI
更新于2025-09-10 09:29:36
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Transparent and Flexible Thin-Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition
摘要： High-performance, transparent, and flexible thin-film transistors (TFTs) with polycrystalline channels in a bottom-gate structure are successfully fabricated at extremely low temperatures of 80, 90, and 100 °C by atomic layer deposition (ALD) in which ZnO and Al2O3 are used as channels and dielectric layers, respectively. The transistors are superior to silicon-based TFTs in which high temperatures are necessarily involved in both preparation and postgrowth annealing. Among all devices, TFTs grown at 100 °C exhibit the best performance which can be attributed to the lowest grain boundary trap density. Additionally, the TFTs are successfully transferred to plastic substrates without any performance degradation, which shows a high mobility of 37.1 cm2 V?1 s?1, a high on/off-state current ratio of 107 at VDS = 0.1 V, a small subthreshold swing of 0.38 V dec?1, and a proper threshold voltage of 1.34 V as well as an excellent bias stability.
关键词： bottom gate/top contacts,thin-film transistors,oxide,atomic layer deposition,zinc oxide,aluminum
更新于2025-09-10 09:29:36
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UV-light-activated H2S gas sensing by a TiO2 nanoparticulate thin film at room temperature
摘要： A UV-light-activated TiO2 thin film gas sensor composed of nanoparticles is reported for H2S detection at room temperature. TiO2 nanoparticulate thin films were fabricated by bar coating of a mixture of TiO2 powder and acetic acid. The morphology and structural properties of the films were examined by scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy, and absorption spectroscopy. The nil response to H2S was significantly enhanced by UV light irradiation in the response levels and response/recovery kinetics. The effect of the sensor conductance and light intensity towards sensor optimization was discussed. The sensor exhibited high gas selectivity, repeatability, and linearity for practical applications of the sensor, but the interference of humidity on the sensing process needs to be solved. The results exhibited a simple way to detect parts per million concentrations of H2S at room temperature.
关键词： TiO2 nanoparticulate thin film,room temperature sensing,UV-light-activated sensing,H2S
更新于2025-09-10 09:29:36
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Preparation and Characterization of Copper Doped Cd0.7Zn0.3S Thin Film and Evaluation of Doping Effect of Copper
摘要： Cd0.7Zn0.3S was doped for different mol % of Cu was prepared by chemically deposited technique. The film has been characterized by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy and ultra violet spectroscopy. The result of X-ray diffraction showed that the films are polycrystalline in nature with a hexagonal structure. SEM studies revealed the size of the sphere increases initially with the increase in Cu concentration. The presence of elemental constituent has been confirmed by energy dispersive X-ray analysis. Results obtained from optical studies showed that the band gap energy varied from 4.650 to 3.265 eV, which confirmed the decrease of band gap with increase in the concentration of Cu on Cd0.7Zn0.3S.
关键词： SEM,Copper,Chemical bath deposition,Thin film,XRD
更新于2025-09-10 09:29:36
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Charging of electron beam irradiated amorphous carbon thin films at liquid nitrogen temperature
摘要： We studied the charging behavior of an amorphous carbon thin film kept at liquid-nitrogen temperature under focused electron-beam irradiation. Negative charging of the thin film is observed. The charging is attributed to a local change in the work function of the thin film induced by electron-stimulated desorption similar to the working principle of the hole free phase plate in its Volta potential implementation at elevated temperature. The negative bias of the irradiated film arises from the electron beam induced desorption of water molecules from the carbon film surface. The lack of positive charging, which is expected for non-conductive materials, is explained by a sufficient electrical conductivity of the carbon thin film even at liquid-nitrogen temperature as proven by multi-probe scanning tunneling microscopy and spectroscopy measurements.
关键词： Thin film,Radiation damage,Phase plate,Electron-beam induced charging,Hole free phase plate,Transmission electron microscope,Volta phase plate
更新于2025-09-10 09:29:36
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Highly Sensitive Surface Acoustic Wave Magnetic Field Sensor Using Multilayered TbCo2/FeCo Thin Film
摘要： Over the last decades, the use of Surface Acoustic Waves (SAW) has emerged as a promising technology in many applications such as filters, signal processing but also sensors. We report the fabrication and the characterization of a SAW delay line magnetic field sensor using uniaxial multi-layered 14×[TbCo2(3.7nm)/FeCo(4nm)] nanostructured thin film deposited on Y36° Lithium Niobate (Figure 1a). The sensor shows an interesting dependency to a tunable bias magnetic field with different orientations relative to the easy axis. The obtained results are well explained using an equivalent piezo-magnetic model described in a previous work.
关键词： ΔE-effect,SAW sensor,multilayered thin film,magnetostriction
更新于2025-09-10 09:29:36
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Electrical and optical properties of metal-sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film
摘要： Metal-sandwiched zinc oxide (ZnO)/titanium (Ti)/copper (Cu)/Ti/ZnO thin film systems were fabricated using magnetron sputtering technology and then annealed using a rapid thermal annealing system at temperatures from 100 to 400°C. The influence of the Ti film thicknesses and annealing temperatures on the surface morphologies, sheet resistance and optical properties were studied. The surface morphologies change a little with the annealing temperature rises. The sheet resistances reduce with the Ti film thickness or annealing temperature increasing. Both the max transmittance and figure of merit reduce with the increase of Ti film thickness. The max transmittance increases with the temperature increasing from 100 to 300°C and then reduces. However, the figure of merit increases with the temperature increasing which indicates that the metal-sandwiched ZnO/Ti/Cu/Ti/ZnO thin film system annealed at 400°C has the optimal performance.
关键词： ZnO,optical properties,annealing,magnetron sputtering,Cu,electrical properties,transparent conductive thin film,Ti
更新于2025-09-10 09:29:36
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Effect of Copper Concentration on the Optical Properties of Cu<sub>2</sub>Zn<sub>0.8</sub>Cd<sub>0.2</sub>SnS<sub>4</sub> Pentrary Alloy Nanostructures
摘要： Cu2Zn0.2Cd0.8SnS4 pentrary alloy nanostructures deposited at different molarity copper 0.3, 0.5, 0.7 and 0.9 M were grown by sol-gel method on glass substrate. The optical absorption indicates that the band gap of Cu2Zn0.2Cd0.8SnS4 nanostructures decreases linearly from 1.80 eV (0.3M) to 1.60 eV (0.9M). The transmittance value is in the range 63-49% depending on the Cu content.
关键词： cooper concentration,Spin-coat technique,Cu2Zn0.2Cd0.8SnS4,Thin film
更新于2025-09-10 09:29:36