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High‐Performance, Transparent Thin Film Hydrogen Gas Sensor Using 2D Electron Gas at Interface of Oxide Thin Film Heterostructure Grown by Atomic Layer Deposition
摘要： A high-performance, transparent, and extremely thin (<15 nm) hydrogen (H2) gas sensor is developed using 2D electron gas (2DEG) at the interface of an Al2O3/TiO2 thin film heterostructure grown by atomic layer deposition (ALD), without using an epitaxial layer or a single crystalline substrate. Palladium nanoparticles (≈2 nm in thickness) are used on the surface of the Al2O3/TiO2 thin film heterostructure to detect H2. This extremely thin gas sensor can be fabricated on general substrates such as a quartz, enabling its practical application. Interestingly, the electron density of the Al2O3/TiO2 thin film heterostructure can be tailored using ALD process temperature in contrast to 2DEG at the epitaxial interfaces of the oxide heterostructures such as LaAlO3/SrTiO3. This tunability provides the optimal electron density for H2 detection. The Pd/Al2O3/TiO2 sensor detects H2 gas quickly with a short response time of <30 s at 300 K which outperforms conventional H2 gas sensors, indicating that heating modules are not required for the rapid detection of H2. A wide bandgap (>3.2 eV) with the extremely thin film thickness allows for a transparent sensor (transmittance of 83% in the visible spectrum) and this fabrication scheme enables the development of flexible gas sensors.
关键词： gas sensor,oxide heterostructure,thin film,atomic layer deposition,hydrogen
更新于2025-09-04 15:30:14
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Imide‐Functionalized Polymer Semiconductors
摘要： Imide-functionalized p-conjugated polymer semiconductors have received a great deal of interest owing to their unique physicochemical properties and optoelectronic characteristics, including excellent solubility, highly planar backbones, widely tunable band gaps and energy levels of frontier molecular orbitals, and good film morphology. The organic electronics community has witnessed rapid expansion of the materials library and remarkable improvement in device performance recently. This review summarizes the development of imide-functionalized polymer semiconductors as well as their device performance in organic thin-film transistors and polymer solar cells, mainly achieved in the past three years. The materials mainly cover naphthalene diimide, perylene diimide, and bithiophene imide, and other imide-based polymer semiconductors are also discussed. The perspective offers our insights for developing new imide-functionalized building blocks and polymer semiconductors with optimized optoelectronic properties. We hope that this review will generate more research interest in the community to realize further improved device performance by developing new imide-functionalized polymer semiconductors.
关键词： organic thin-film transistors,imide-functionalized polymers,organic semiconductors,solar cells
更新于2025-09-04 15:30:14
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Enabling thin-film transistor technologies and the device metrics that matter
摘要： The field-effect transistor kickstarted the digital revolution that propelled our society into the information age. One member of the now large family of field-effect devices is the thin-film transistor (TFT), best known for its enabling role in modern flat-panel displays. TFTs can be used in all sorts of innovative applications because of the broad variety of materials they can be made from, which give them diverse electrical and mechanical characteristics. To successfully utilize TFT technologies in a variety of rapidly emerging applications, such as flexible, stretchable and transparent large-area microelectronics, there are a number of metrics that matter.
关键词： field-effect transistor,digital revolution,flexible electronics,large-area microelectronics,thin-film transistor,stretchable electronics,flat-panel displays,TFT,transparent electronics
更新于2025-09-04 15:30:14
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Robust Design of Digital Circuits on Foil || Design Case: RFID Tags
摘要： In this chapter, we have presented the designs and technology evolutions that will allow thin-film electronics on plastic foil to fulfill the required specifications for EPC item-level tagging. In particular, we have shown that many of these specifications can be met. A 64-bit organic RFID tag has been elaborated; it is inductively coupled at a base carrier frequency of 13.56 MHz. The complexity of the chip has been increased to a 128-bit transponder chip. Also a basic ALOHA anti-collision protocol and WORM memory have been integrated. EPC-based data rates of 50 kb/s have been reached by downscaling of the technology. These data rates could also be met by using high-performing metal-oxide transistors or by the integration of diode-load or complementary logic. Recently, we demonstrated the possibility for plastic RFID tags to implement a bi-directional communication to realize an anti-collision protocol.
关键词： EPC,WORM memory,thin-film electronics,RFID,bi-directional communication,transponder chip,anti-collision protocol,organic electronics
更新于2025-09-04 15:30:14
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Unraveling the oxygen effect on the property of sputtered BaSnO3 thin films
摘要： The perovskite oxide BaSnO3 is a highly topical material for next-generation transparent conducting semiconductors. The foreign chemical doping strategy is largely used to realize the high conductivity in BaSnO3. Removal of oxygen in BaSnO3 is another route to get high conductivity but the oxygen vacancy-property relationships have not been realized completely, which is of fundamental importance for the future optoelectronic applications. Here we report how the oxygen vacancies in sputtered BaSnO3 films can be accounted for the structural and chemical environment, the transport phenomena, and the optoelectronic properties. Oxygen vacancies in BaSnO3 films cause the expansion of the unit cell along the out-of-plane direction, enhance the conductivity, transform the electronic transport mechanism from the thermal activation model to the variable-range hopping (VRH) model, and spawn the sub-band level-assisted photoconduction. The present work further strengthens our understanding of the oxygen effect on the physical properties in BaSnO3-based systems.
关键词： oxygen vacancy,transport property,transparent conductive oxide,BaSnO3,photo response,thin film
更新于2025-09-04 15:30:14
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Correlation between Ni valence and resistance modulation on SmNiO <sub/>3</sub> chemical transistor
摘要： The resistance modulation under various gate voltage (Vg) application conditions was systematically studied for a chemical field effect transistor (FET) composed of a SmNiO3 (SNO) film channel and an ionic liquid gate insulator. The channel resistance of the SNO chemical FET changed nonlinearly over a wide range for different temperatures, Vg magnitudes, and Vg application durations. The correlation between the modulated resistance and the Ni valence state was quantitatively revealed using X-ray photoelectron spectroscopy. A model describing the resistance change with the Vg application conditions was proposed by considering the kinetics of the reduction reaction on the SNO channel. This model enables the resistance to be predicted for given Vg application conditions, and selective resistance modulation over a wide range of resistances has been demonstrated.
关键词： control resistance modulation,nonvolatile,redox reaction,oxygen vacancy,Nickelate thin film
更新于2025-09-04 15:30:14
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[Institution of Engineering and Technology 12th European Conference on Antennas and Propagation (EuCAP 2018) - London, UK (9-13 April 2018)] 12th European Conference on Antennas and Propagation (EuCAP 2018) - Flexible Antennas for Wearable Applications: Recent Advances and Design Challenges
摘要： Wearable electronics are recently gaining significant scientific interest for a wide range of applications, including healthcare, sports, child monitoring, and consumer electronics. Integration of wireless functionalities into the aforementioned wearable electronics unobtrusive and round-the-clock performance. Therefore, one of the main challenges associated with wearable electronics lies in the realization of body-worn antennas that are flexible, ubiquitous, robust, and low-cost, while still exhibiting Radio- Frequency (RF) performance similar to that of their rigid copper counterparts. With this in mind, this paper presents a state-of-the-art overview of flexible antenna technologies reported for wearable applications. Specifically, the paper explains the fabrication process and outlines the appealing features of two flexible antenna categories, namely thin-film and fabric-based antennas. The paper also explains the design challenges associated with each of these two flexible antenna technologies, as attributed to their associated constraints and restrictions.
关键词： wearables,textile antennas,flexible antennas,thin-film antennas
更新于2025-09-04 15:30:14
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High magnetoelectric coupling in Si-integrated AlN/NiMnIn thin film double layers at room temperature
摘要： The current study explores the presence of strong magnetoelectric (ME) coupling in a sputtered deposited NiMnIn/aluminum nitride (AlN) heterostructure on an Si substrate. The X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy results confirm the formation of a pure AlN wurtzite phase in the ME heterostructure. The magnetization vs temperature measurement shows the presence of the martensite transformation region of the NiMnIn/AlN heterostructure. The magnetic measurements exhibit the room temperature ferromagnetic nature of the NiMnIn/AlN heterostructure. The NiMnIn/AlN ME heterostructure was found to have a high ME coupling coefficient of (cid:2)99.2 V/cm Oe at Hdc ? 300 Oe. The induced ME coupling coefficient shows a linear dependency on Hac up to 8 Oe.
关键词： room temperature,Si-integrated,thin film,magnetoelectric coupling,AlN/NiMnIn
更新于2025-09-04 15:30:14
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Applicability of the thin-film approximation in terahertz photoconductivity measurements
摘要： Thin mesoporous photoconductive layers are critically important for efficient water-spitting solar cells. A detailed understanding of photoconductivity in these materials can be achieved via terahertz transient absorption measurements. Such measurements are commonly interpreted using the thin-film approximation. We compare this approximation with a numerical solution of the transfer function without approximations using experimental results for thin-film mesoporous tin oxide (SnO2) samples which range in thickness from 3.3 to 12.6 mm. These samples were sensitized with either a ruthenium polypyridyl complex or a porphyrin dye. The two sensitizers have markedly different absorption coefficients, resulting in penetration depths of 15 mm and 1 mm, respectively. The thin-film approximation results are in good agreement with the numerical work-up for the short penetration length dye. For the longer penetration length samples, the thin-film formula fails even for thicknesses of only 3 mm (cid:2) k/100. The imaginary part of the conductivity calculated using the thin-film formula was significantly larger in magnitude than the value without approximations. This discrepancy between the commonly used thin-film approximation and the numerical solution demonstrates the need for a careful analysis of the thin-film formula.
关键词： thin-film approximation,terahertz photoconductivity,mesoporous SnO2,ruthenium polypyridyl complex,porphyrin dye
更新于2025-09-04 15:30:14
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Enhancement of the Electrical Performance of the Organic Ferroelectric Memory Transistor by Reducing the Surface Roughness of the Polymer Insulator with a Homo-Bilayer PVDF-TrFE
摘要： We suggest a feasible method to enhance the electrical performance of the organic nonvolatile memory transistor by reducing the surface roughness of the ferroelectric polymer insulator. A homo-bilayer of poly(vinylidene?uoride-co-tri?uoroethylene) [P(VDF-TrFE)] was used to control the high surface roughness of the conventional single layer [P(VDF-TrFE)] polymer insulator. The smoothening of the polymer insulator was achieved as the Z rms roughness was as low as 11.9 nm compared to the aboriginal single P(VDF-TrFE) ?lm of 18.8 nm. The homo-bilayer P(VDF-TrFE) thin ?lm transistor showed a higher memory on-off ratio (about 100) and mobility (2.9 × 10?2 cm2v?1s?1) compared with the native P(VDF-TrFE) with memory on-off ratio of 16 and mobility of 2.1 × 10?2 cm2v?1s?1. The underlying mechanism for the mobility enhancement which resulted in a high on-off ratio is mainly attributed to the reduction of the surface roughness of the ferroelectric polymer insulator.
关键词： Organic Thin Film Transistor,Ferroelectric,Homobilayer,P(VDF-TrFE)
更新于2025-09-04 15:30:14