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- 2018
- thin-film transistors
- N2O plasma treatment.
- amorphous InGaZnO
- gate-bias stress
- stability
- Electronic Science and Technology
- Peking University
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Optical, electrical, structural and magnetic properties of BiSe thin films produced by CBD on different substrates for optoelectronics applications
摘要： BiSe thin films have been grown on substrates as PMMA, ITO, glass and Si wafer by using chemical bath deposition (CBD) method. Deposition temperature and time and pH are kept to be constant during the production of the thin films. The thickness of BiSe thin films, which are produced on ITO, glass, PMMA and Si wafer substrate are 513, 468, 1039 and 260 nm, respectively. According to GAXRD results, the films, which are grown on glass and PMMA substrate, have amorphous structure, but, the films, which are grown on ITO and Si wafer substrate, have peaks of Bi2Se3 crystal. Grain sizes, crystallization number per unit area and dislocation density for ITO and Si wafer substrate are calculated as 112.40 nm and 43.04 nm; 2.25×10?5 and 7.91×10?5 (1/nm2), respectively. The contact angles and critical surface tension of distilled water, ethylene glycol, formamide and diiodamethane liquids for thin films grown on glass, ITO, PMMA and Si wafers were obtained by the Zisman method. The % transmittance and % reflectance values of thin films grown on glass, ITO, PMMA are calculated as % T: 79.90, 92.76 and 67.37; % R: 6.18, 2.07 and 10.59, respectively. Eg values of thin films grown on glass, ITO, PMMA are calculated as Eg=1.92; 2.18; 1.60 eV. The extinction coefficients, refractive indexes and relative dielectric constants of thin films grown on glass, ITO, PMMA are calculated as k=0.007; 0.002 and 0.012; n=1.65; 1.34 and 1.96; ε1=0.271; 0.083 and 0.528 respectively. Sheet resistance, hall mobility, sheet carrier densities, bulk carrier densities and conductivity types for glass, ITO, PMMA and Si are 6.52×107, 6.65×101, 1.09×108 and 6.45×102 (Ω/cm2); 2.38, 1.21×10?1, 5.34 and 1.52 (cm2/V.s); 4.01×1010, 7.71×1017, 1.06×1010 and 6.34×1015 (cm?2); 4.58×1014, 1.50×1022, 1.02×1014 and 2.89×1020 (cm?3); p, n, p and p, respectively. In addition, I–V characteristics and changes of magnetoresistance values versus magnetic field of the thin films are obtained by Van der Pauw method and HEMS.
关键词： magnetoresistance,thin film deposition,optical band gap,carrier density,surface properties,crystal growth
更新于2025-09-23 15:21:21
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Comprehensive Understanding and Controlling the Defect Structures: An Effective Approach for Organic-Inorganic Hybrid Perovskite-Based Solar-Cell Application
摘要： Understanding the defect structure in organic-inorganic hybrid perovskite material (OHP) is a crucial role to explain several physical properties such as material stability, energy band, carrier mobility, and so on. In the solar-cell applications using OHP, finding, understanding, and controlling defects is essential to making a more advanced device with high efficiency and stability. Naturally, we need to find, understand, and control the possible defects in OHP. However, the defect research field in OHP material is just beginning now. In this short review, we will explore the kinds of defects and their effects on OHP.
关键词： molecular defect,organic-inorganic hybrid perovskite,Schottky/Frankel defect,vacancy,delocalized defect,thin film,defect,solar-cell
更新于2025-09-23 15:21:21
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Transparent Conductive Materials (Materials, Synthesis, Characterization, Applications) || Metallic Oxides (ITO, ZnO, SnO <sub/>2</sub> , TiO <sub/>2</sub> )
摘要： The material class of transparent conductive oxides (TCOs) combines two seemingly contradictory physical properties: high optical transmittance in the visible and near-infrared (NIR) spectral range (like insulators) and high electrical conductivity (like metals). These two key properties make TCO materials very well suited for transparent thin film electrodes for thin film solar cells, flat panel displays, light-emitting devices, or heated windows.
关键词： ZnO,light-emitting devices,SnO2,Transparent Conductive Oxides,thin film electrodes,ITO,solar cells,TiO2,flat panel displays,TCOs
更新于2025-09-23 15:21:21
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Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
摘要： In this study, a methodology for producing highly controlled and uniformly dispersed metal nanoparticles were developed by atomic layer deposition (ALD) technique. All-ALD grown thin film flash memory (TFFM) cells and their applications were demonstrated with ultra-small platinum nanoparticles (Pt-NPs) as charge trapping layer and control tunnel oxide layer. The ultra-small Pt-NPs possessed sizes ranging from 2.3 to 2.6 nm and particle densities of about 2.5 × 1013 cm–b. The effect of Pt-NPs embedded on the storage layer for charging was investigated. The charging effect of ultra-small Pt-NPs the storage layer was observed using the electrical characteristics of TFFM. The Pt-NPs were observed by a high-resolution scanning electron microscopy (HR-SEM). The memory effect was manifested by hysteresis in the IDS-VDS and IDS-VGS curves. The charge storage capacity of the TFFM cells demonstrated that ALD-grown Pt-NPs in conjunction with ZnO layer can be considered as a promising candidate for memory devices. Moreover, ZnO TFFM showed a ION/IOFF ratio of up to 52 orders of magnitude ?a/b – Vgs curve. Fabricated TFFMs exhibited clear pinch-off and show n-type field effect transistor (FET) behavior. The role of atomic-scale controlled Pt-NPs for improvement of devices were also discussed and they indicated that ALD-grown Pt-NPs can be utilized in nanoscale electronic devices as alternative quantum dot structures.
关键词： ZnO,Thin film flash memory,Pt nanoparticle,Atomic layer deposition,Memristor
更新于2025-09-23 15:21:21
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Magnetic and optical behaviors of SnO2-x thin films with oxygen vacancies prepared by atomic layer deposition
摘要： SnO2-x thin films with different concentration oxygen vacancies were prepared by Atomic Layer Deposition (ALD). Specifically, the oxygen vacancy concentration was controlled by the oxidation pulse time during the ALD process. The crystal structure of the as-prepared thin films was determined by XRD, and the magnetic properties were measured by VSM, while the optical properties were measured by optical transmittance spectrum. The results showed that the oxygen vacancy concentration of the SnO2-x could be controlled by the oxidation pulse time, and the crystal structures, magnetic properties, and optical properties were largely impacted by the concentration of oxygen vacancy.
关键词： microstructure,thin film,magnetic,diffraction,nanocrystal,oxygen vacancy
更新于2025-09-23 15:21:21
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X-ray Photoelectron Spectroscopy Analysis of the Effect of Photoresist Passivation on InGaZnO Thin-film Transistors
摘要： Bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs) with EOC photoresist (PR) passivation were fabricated. Compared to the unpassivated IGZO TFT with a mobility of 6.71 cm2V-1s-1, a hysteresis of 2.42 V and a poor bias stress stability, the PR-passivated IGZO TFT showed good electrical characteristics with a higher mobility of 8.85 cm2V-1s-1, a lower hysteresis of 0.06 V and a more reliable stability (△Vth = 0.36 V) under positive gate bias stress (PBS). The effect of PR passivation on the performance of IGZO-TFT was investigated by x-ray photoelectron spectroscopy (XPS), systemically. The result of XPS spectra of the O 1s core levels indicate that PR passivation effectively suppressed the adsorption/desorption effect on IGZO surface, resulting in fewer unstable states and higher electrical stability. Furthermore, XPS depth profile experiments show that the proportion of elements on the film surface changed and the IGZO surface was In-rich after PR passivation, enhancing the mobility. The PR passivation with low temperature (100 oC) process exhibited good dielectric quality and excellent barrier ability against water and oxygen molecules. Therefore, it may be a good candidate for high-mobility and high-stability flexible TFTs in future.
关键词： XPS,InGaZnO,Photoresist,Thin film transistors,Adsorption/desorption
更新于2025-09-23 15:21:21
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[IEEE 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - Ann Arbor, MI (2018.7.16-2018.7.18)] 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - Nonlinear Equivalent-Circuit Model for Thin-Film Magnetic Material Based RF Devices
摘要： A nonlinear equivalent-circuit model is developed for thin-film magnetic material based RF devices such as frequency-selective limiter (FSL) and signal-to-noise enhancer (SNE). The ferromagnetic resonance is modeled by a RLC parallel circuit with parameters derived from Kittel’s equations. The nonlinear effect in magnetic material is represented by a pendulum model that predicts cross-frequency coupling as well as parametric oscillations of spins. The coupling of spin waves in different orders is also modeled by coupled nonlinear pendulum resonators with the exchange coupling between the spins represented by coupling inductors. The measurement results of a FSL in literature are used as a reference, and the model successfully predicts the threshold power level, nonlinear insertion loss, and frequency selectivity of the device.
关键词： Ferromagnetic resonance (FMR),Yttrium iron garnet (YIG),nonlinear model,thin film,frequency selective limiter (FSL)
更新于2025-09-23 15:21:21
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<i>(Invited)</i> Fabrication Technique for Low-Temperature Aqueous Solution-Processed Oxide Thin-Film Transistors
摘要： Solution-processing of oxide semiconductor is a promising technique for the simple and low-cost fabrication of oxide thin-film transistors (TFTs). We demonstrate improved TFT characteristics by application of a hydrogen injection and oxidation (HIO) process to the fabrication of high-performance low-temperature oxide TFTs. The compatibility of this technique for flexible substrates was also confirmed when the HIO method was applied to solution-processed metal oxide TFTs.
关键词： solution-processing,flexible substrates,low-temperature fabrication,oxide thin-film transistors,hydrogen injection and oxidation
更新于2025-09-23 15:21:21
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Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence
摘要： Highly reducing activity of quasiballistic hot electrons emitted from a nanocrystalline silicon (nc-Si) diode is veri?ed in terms of liquid-phase thin ?lm deposition. Incident electrons reduce positive ions in salt solutions coated on a target substrate, and then result in deposition of thin metal (Cu) and semiconducting (Si, Ge, and SiGe) ?lms. This mechanism is investigated here throughout the process from electron incidence to thin ?lm deposition. Thermodynamic criterion deduced from classical nucleation theory suggests that the output electron energy of the nc-Si emitter is suitable for promoting preferential reduction of target ions in solutions leading to the nuclei formation. In accordance with mass-transport analyses on generated nanoclusters, the most primary factor of thin ?lm growth is the dose of incident electron. The formulated deposition rate rapidly increases and reaches a stationary value within 0.1 s after electron incidence. The theoretical dependency of the thin ?lm thickness on the electron incidence time is consistent with the experimental results. Speci?c features of this scheme as an alternative approach for thin ?lm deposition are discussed in comparison with the conventional dry and wet processes.
关键词： nanocrystalline silicon diode,quasiballistic hot electrons,mass-transport analyses,thermodynamic criterion,liquid-phase thin film deposition
更新于2025-09-23 15:21:21
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Surfactant-free stable SnS2 nanoparticles dispersion for deposition of device-quality films
摘要： Tin sulfide (SnS2) has recently attracted considerable attention due to its layered structure that may form two dimensional morphologies. It is an n-type semiconductor with band gap and electron affinity similar to CdS and In2S3; therefore can be regarded as an alternative for these materials in thin film solar cells. Here, we synthesis of SnS2 nanoparticles with different morphology in different ratio of water-ethanol mixed solution by solvothermal method, and observe that more ethanol leads to large sheet like morphologies, while water based synthesis results in very small nanosheets. A challenge in wet deposition of device-quality thin films of SnS2 is the requirement for highly dispersed particles/sheets. We found highly polar dimethylformamide (DMF) as the right dispersing medium, yielding highly stable dispersions. Very uniform nanocrystalline thin films with [001] preferred orientation and good adhesion to substrate are simply deposited by drop casting and spin coating a 0.5 wt% DMF sol of SnS2 at 2000 rpm for 1 min. Electron affinity and band gap of the films are 4.33 eV and 2.27 eV, which is well aligned for copper indium gallium sulfo-selenide (CIGS) solar cells.
关键词： Two dimensional structures,Surfactant-free dispersion,copper indium gallium sulfo-selenide solar cells,SnS2 thin film,Dimethylformamide,Buffer layer
更新于2025-09-23 15:21:21